Patents by Inventor Yi-Hsien Chen
Yi-Hsien Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11963295Abstract: Provided are a circuit apparatus, a manufacturing method thereof, and a circuit system. The circuit apparatus includes a flexible circuit board, a flexible packaging material layer and an electronic device. The flexible circuit board has at least one hollow pattern, wherein the flexible circuit board has an inner region and a peripheral region surrounding the inner region, and has a first surface and a second surface opposite to each other. The flexible packaging material layer is disposed in the at least one hollow pattern. The electronic device is disposed on the first surface of the flexible circuit board and electrically connected with the flexible circuit board.Type: GrantFiled: January 27, 2022Date of Patent: April 16, 2024Assignee: Industrial Technology Research InstituteInventors: Hung-Hsien Ko, Yi-Cheng Lu, Heng-Yin Chen, Hao-Wei Yu, Te-Hsun Lin
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Patent number: 11953913Abstract: There is provided a smart detection system including multiple sensors and a central server. The central server confirms a model of every sensor and a position thereof in an operation area. The central server confirms an event position and predicts a user action according to event signals sent by the multiple sensors.Type: GrantFiled: August 30, 2021Date of Patent: April 9, 2024Assignee: PIXART IMAGING INC.Inventors: Yi-Hsien Ko, Yen-Min Chang, Nien-Tse Chen
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Publication number: 20240112957Abstract: A fabrication method is disclosed that includes: forming a first metal layer over first and second semiconductor structures; forming a first patterned photolithographic layer with an opening that exposes a portion of the first metal layer over the first semiconductor structure but not to a boundary between semiconductor structures; removing the exposed portion of the first metal layer; forming a second metal layer over the first and second semiconductor structures; forming a second patterned photolithographic layer with an opening that exposes a portion of the second metal layer over the second semiconductor structure but not to the boundary; removing the exposed portion of the first and second metal layers; wherein a barrier structure is generated between the first and second semiconductor structures that includes remaining portions of the first metal layer and a portion of the second metal layer overlying the remaining portions of the first metal layer.Type: ApplicationFiled: January 12, 2023Publication date: April 4, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Xuan Wang, Cheng-Chun Tseng, Yi-Chun Chen, Yu-Hsien Lin, Ryan Chia-Jen Chen
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Patent number: 11943935Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.Type: GrantFiled: September 26, 2022Date of Patent: March 26, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chun-Yen Tseng, Shu-Ru Wang, Yu-Tse Kuo, Chang-Hung Chen, Yi-Ting Wu, Shu-Wei Yeh, Ya-Lan Chiou, Chun-Hsien Huang
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Publication number: 20240092662Abstract: A method for removing a heavy metal from water includes subjecting a microbial solution containing a liquid culture of a urease-producing bacterial strain and a reaction solution containing a manganese compound and urea to a microbial-induced precipitation reaction, so as to obtain biomineralized manganese carbonate (MnCO3) particles, admixing the biomineralized MnCO3 particles with water containing a heavy metal, so that the biomineralized MnCO3 particles adsorb the heavy metal in the water to form a precipitate, and removing the precipitate from the water.Type: ApplicationFiled: February 9, 2023Publication date: March 21, 2024Inventors: Chien-Yen CHEN, Yi-Hsun HUANG, Pin-Yun LIN, Anggraeni Kumala DEWI, Koyeli DAS, Uttara SUKUL, Tsung-Hsien CHEN, Raju Kumar SHARMA, Cheng-Kang LU, Chung-Ming LU
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Publication number: 20240068705Abstract: This disclosure is a condensate evaporation device. An air conditioning apparatus includes a compressor, an evaporator and a condenser connected with one another. A water tray is arranged to receive the condensate. A water distribution module includes a water separator base and a water separator piece. The water separator piece and the water separator base are combined to define a water channel. The condensate flows through the water channel to evenly flow out. A multi-folded water absorbing body is arranged on one side of the water separator base to absorb the condensate flowed out from the water separator base. The water tank is arranged on a bottom side of the multi-folded water absorbing body. A fan is arranged on one side of the multi-folded water absorbing body. Accordingly, the condensate may be evaporated efficiently.Type: ApplicationFiled: January 18, 2023Publication date: February 29, 2024Inventors: Chao-Hsien CHAN, Yi-Chung CHOU, Chun-Hsun CHEN
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Publication number: 20240014292Abstract: Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to the present disclosure includes an active region having a channel region and a source/drain region, a gate structure over the channel region, a gate spacer layer disposed over the channel region and extending along a sidewall of the gate structure, an epitaxial source/drain feature over the source/drain region, a contact etch stop layer (CESL) disposed on the epitaxial source/drain feature and extending along a sidewall of the gate spacer layer, a source/drain contact disposed over the epitaxial source/drain feature, and a dielectric cap layer disposed over the gate structure, the gate spacer layer and at least a portion of the CESL. A sidewall of the source/drain contact is in direct contact with a sidewall of the CESL.Type: ApplicationFiled: January 6, 2023Publication date: January 11, 2024Inventors: Ta-Chun Lin, Yi-Hsien Chen, Wen-Cheng Luo, Chung-Ting Li, Yi-Shien Mor, Chih-Hao Chang
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Publication number: 20230299154Abstract: A method according to the present disclosure includes receiving a workpiece that includes a first gate structure including a first cap layer thereon, a first source/drain contact adjacent the first gate structure, a second gate structure including a second cap layer thereon, a second source/drain contact, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, and a first dielectric layer over the ESL. The method further includes forming a butted contact opening to expose the first cap layer and the first source/drain contact, forming a butted contact in the butted contact opening, after the forming of the butted contact, depositing a second dielectric layer, forming a source/drain contact via opening through the second dielectric layer, the ESL layer, and the first dielectric layer to expose the second source/drain contact, and forming a source/drain contact via in the source/drain contact via opening.Type: ApplicationFiled: May 22, 2023Publication date: September 21, 2023Inventors: Fu-Hsiang Su, Yi Hsien Chen
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Patent number: 11658215Abstract: A method according to the present disclosure includes receiving a workpiece that includes a first gate structure including a first cap layer thereon, a first source/drain contact adjacent the first gate structure, a second gate structure including a second cap layer thereon, a second source/drain contact, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, and a first dielectric layer over the ESL. The method further includes forming a butted contact opening to expose the first cap layer and the first source/drain contact, forming a butted contact in the butted contact opening, after the forming of the butted contact, depositing a second dielectric layer, forming a source/drain contact via opening through the second dielectric layer, the ESL layer, and the first dielectric layer to expose the second source/drain contact, and forming a source/drain contact via in the source/drain contact via opening.Type: GrantFiled: April 13, 2021Date of Patent: May 23, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Fu-Hsiang Su, Yi-Hsien Chen
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Publication number: 20220271130Abstract: A method according to the present disclosure includes receiving a workpiece that includes a first gate structure including a first cap layer thereon, a first source/drain contact adjacent the first gate structure, a second gate structure including a second cap layer thereon, a second source/drain contact, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, and a first dielectric layer over the ESL. The method further includes forming a butted contact opening to expose the first cap layer and the first source/drain contact, forming a butted contact in the butted contact opening, after the forming of the butted contact, depositing a second dielectric layer, forming a source/drain contact via opening through the second dielectric layer, the ESL layer, and the first dielectric layer to expose the second source/drain contact, and forming a source/drain contact via in the source/drain contact via opening.Type: ApplicationFiled: April 13, 2021Publication date: August 25, 2022Inventors: Fu-Hsiang Su, Yi-Hsien Chen
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Patent number: 10786866Abstract: An inspecting and repairing device of additive manufacturing technology and a method thereof are provided. The inspecting and repairing device has a powder bed unit, a repairing unit, and an inspection unit. The powder bed unit has a powder platform, a powder spreading mechanism and a laser unit. The repairing unit has a processing mechanism. The inspection unit has a camera and a controller. According to an image of the powder platform captured by the camera, the controller can determine whether spreading powders, whether being overcome a powder spreading defect, or whether driving the processing mechanism to repair a surface of a workpiece.Type: GrantFiled: October 27, 2017Date of Patent: September 29, 2020Assignee: TONGTAI MACHINE & TOOL CO., LTD.Inventors: Yi-Hsien Chen, Hsin-Pao Chen, Jui-Hsiung Yen
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Publication number: 20180126487Abstract: An inspecting and repairing device of additive manufacturing technology and a method thereof are provided. The inspecting and repairing device has a powder bed unit, a repairing unit, and an inspection unit. The powder bed unit has a powder platform, a powder spreading mechanism and a laser unit. The repairing unit has a processing mechanism. The inspection unit has a camera and a controller. According to an image of the powder platform captured by the camera, the controller can determine whether spreading powders, whether being overcome a powder spreading defect, or whether driving the processing mechanism to repair a surface of a workpiece.Type: ApplicationFiled: October 27, 2017Publication date: May 10, 2018Inventors: YI-HSIEN CHEN, HSIN-PAO CHEN, JUI-HSIUNG YEN
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Patent number: 9136092Abstract: The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having a main feature; performing an optical proximity correction (OPC) process to the design layout; and thereafter, performing a jog reduction process to the design layout such that jog features of the design layout are reduced.Type: GrantFiled: April 9, 2012Date of Patent: September 15, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Ta Lu, Jia-Guei Jou, Yi-Hsien Chen, Peng-Ren Chen, Dong-Hsu Cheng
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Publication number: 20130268901Abstract: The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having a main feature; performing an optical proximity correction (OPC) process to the design layout; and thereafter, performing a jog reduction process to the design layout such that jog features of the design layout are reduced.Type: ApplicationFiled: April 9, 2012Publication date: October 10, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chi-Ta Lu, Jia-Guei Jou, Yi-Hsien Chen, Peng-Ren Chen, Dong-Hsu Cheng
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Publication number: 20100023136Abstract: A control apparatus for a computer system, which includes a control signal generating unit for generating a input control signal, a selection signal generating unit for generating a selection signal, a control signal switching unit coupled to the control signal generating unit and the selection signal generating unit for outputting an enable signal according to the selection signal while receiving the input control signal, and a plurality of hardware signal control receivers coupled to the control signal switching unit, wherein a first hardware signal control receiver of the plurality of hardware signal control receivers is indicated according to the selection signal and informs an operating system of the computer system to execute an action according to the enable signal.Type: ApplicationFiled: July 13, 2009Publication date: January 28, 2010Inventors: Kuei-Kang Chang, Yi-Hsien Chen
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Patent number: 7409861Abstract: A concentration detector is adapted to detect the concentration of a liquid fuel in a container. The concentration detector comprises a rotating mechanism positioned underneath the level of the liquid fuel and having a rotational center. A first float having a specific gravity less than the specific gravity of the liquid fuel, a volume equivalent to “V” and a mass equivalent to “M”. The distance between the mass center of the first float and the rotational center is “L”. A second float connected with the first float and having a specific gravity less than the specific gravity of the liquid fuel, a volume equivalent to “V” and a mass equivalent to “r*M”. The distance between the mass center of the second float and the rotational center is “L. The mass center of the second float, the rotational center and the mass center of the first float constitute an included angle of 120°.Type: GrantFiled: December 14, 2006Date of Patent: August 12, 2008Assignee: Antig Technology Co., Ltd.Inventors: Feng-Yi Deng, Ya-Chien Chung, Yu-Lin Tang, Yi-Hsien Chen
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Patent number: 7404323Abstract: A concentration detector is disclosed, which is adapted to detect a concentration of a liquid fuel in a container. The concentration detector includes a rotating means positioned underneath a level of a liquid fuel and rotatable at an angle ? on a X-Y plane. The rotating means includes at least three floating objects connected with each other. Each floating object has a specific gravity less than a specific gravity of the liquid fuel ?. The floating objects are balanced according to a torque equation, F(?,?)=0, such that the rotating means is still under the level of the liquid fuel. While a concentration of the liquid fuel is changed and the angle ? of the rotating means is detected, the specific gravity of the liquid fuel ? is obtained from the torque equation, F(?,?)=0, and thereby computing the concentration of the liquid fuel.Type: GrantFiled: November 21, 2006Date of Patent: July 29, 2008Assignee: Antig Technology Co., Ltd.Inventors: Hsi-Ming Shu, Feng-Yi Deng, Yu-Lin Tang, Ya-Chien Chuang, Yi-Hsien Chen
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Publication number: 20070231627Abstract: The present invention provides a concentration detection device, which is used to detect the concentration of liquid fuel within a container.Type: ApplicationFiled: March 28, 2007Publication date: October 4, 2007Inventors: Yachien Chung, Yi-Hsien Chen, Feng-Yi Deng, Yu Lin Tang
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Publication number: 20070137299Abstract: A concentration detector is adapted to detect the concentration of a liquid fuel in a container. The concentration detector comprises a rotating mechanism positioned underneath the level of the liquid fuel and having a rotational center. A first float having a specific gravity less than the specific gravity of the liquid fuel, a volume equivalent to “V” and a mass equivalent to “M”. The distance between the mass center of the first float and the rotational center is “L”. A second float connected with the first float and having a specific gravity less than the specific gravity of the liquid fuel, a volume equivalent to “V” and a mass equivalent to “r*M”. The distance between the mass center of the second float and the rotational center is “L. The mass center of the second float, the rotational center and the mass center of the first float constitute an included angle of 120°.Type: ApplicationFiled: December 14, 2006Publication date: June 21, 2007Inventors: Feng-Yi Deng, Ya-Chien Chung, Yu-Lin Tang, Yi-Hsien Chen
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Publication number: 20070113624Abstract: A concentration detector is disclosed, which is adapted to detect a concentration of a liquid fuel in a container. The concentration detector includes a rotating means positioned underneath a level of a liquid fuel and rotatable at an angle ? on a X-Y plane. The rotating means includes at least three floating objects connected with each other. Each floating object has a specific gravity less than a specific gravity of the liquid fuel ?. The floating objects are balanced according to a torque equation, F(?,?)=0, such that the rotating means is still under the level of the liquid fuel. While a concentration of the liquid fuel is changed and the angle ? of the rotating means is detected, the specific gravity of the liquid fuel ? is obtained from the torque equation, F(?,?)=0, and thereby computing the concentration of the liquid fuel.Type: ApplicationFiled: November 21, 2006Publication date: May 24, 2007Inventors: Hsi-Ming Shu, Feng-Yi Deng, Yu-Lin Tang, Ya-Chien Chuang, Yi-Hsien Chen