Abstract: Middle-of-line (MOL) interconnects and corresponding techniques for forming the MOL interconnects are disclosed herein. An exemplary MOL interconnect structure includes a barrier-free source/drain contact, a barrier-free source/drain via, and a barrier-free gate via disposed in an insulator layer. The barrier-free source/drain is disposed on an epitaxial source/drain, and the barrier-free source/drain contact includes tungsten, molybdenum, or a combination thereof. The barrier-free source/drain via is disposed on the barrier-free source/drain contact and the barrier-free source/drain via includes molybdenum. The barrier-free gate via is disposed on a gate stack disposed adjacent to the epitaxial source/drain, and the barrier-free gate via includes tungsten, molybdenum, or a combination thereof. A width of the barrier-free source/drain via and/or the barrier-free gate via may be less than about 16 nm. The barrier-free source/drain via and/or the barrier-free gate via may be formed at the same time (e.g.

Abstract: A tunnel-type probe includes a tube, an elastic member, and a pin. The elastic member is assembled in the tube. The pin is movably disposed through the tube, and is electrically coupled to the tube by being connected to the elastic member. The pin has an inner segment, a contacting segment, and a limiting segment, the latter two of which are connected to two ends of the inner segment. The inner segment is arranged in the tube and is connected to the elastic member. The contacting segment and the limiting segment are respectively located at two opposite sides of the tube. When the tunnel probe abuts against a device under test (DUT) through the contacting segment, the pin is moved in a direction away from the DUT, such that the elastic member is deformed from being pressed by the pin so as to generate an elastic force.

Abstract: An open-type probe of a vertical probe card includes a frame, an elastic member, and a pin. The frame has an operation slot and two lateral openings being in spatial communication with the operation slot. The elastic member is assembled to the frame and is located in the operation slot. The pin includes an inner segment assembled in the operation slot and a contacting segment that protrudes from an opening of the operation slot. The pin abuts against the elastic member through the inner segment so as to be electrically coupled to the frame. The elastic member and the inner segment are arranged between the two lateral openings. The contacting segment is configured to abut against a device under test, so that the contacting segment is moved toward the operation slot to press the elastic member for deforming the elastic member to generate an elastic force.

Abstract: A method according to the present disclosure includes receiving a workpiece that includes a first gate structure including a first cap layer thereon, a first source/drain contact adjacent the first gate structure, a second gate structure including a second cap layer thereon, a second source/drain contact, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, and a first dielectric layer over the ESL. The method further includes forming a butted contact opening to expose the first cap layer and the first source/drain contact, forming a butted contact in the butted contact opening, after the forming of the butted contact, depositing a second dielectric layer, forming a source/drain contact via opening through the second dielectric layer, the ESL layer, and the first dielectric layer to expose the second source/drain contact, and forming a source/drain contact via in the source/drain contact via opening.

Abstract: A semiconductor structure includes a substrate, a channel structure, a gate structure, two gate spacers and an insulating feature. The gate structure is disposed on the channel structure, and includes an upper gate portion which is located at a level higher than that of an uppermost surface of the channel structure. The two gate spacers are respectively located at two opposite sides of the upper gate portion, and each of the gate spacers has an upward surface having a concave profile. The insulating feature is disposed over the upper gate portion and against the concave profiles of the gate spacers to have an inverted U-shaped profile. The insulating feature includes a cap portion which is disposed on an upper surface of the upper gate portion and extends beyond an edge of the upper surface of the upper gate portion. Methods for manufacturing the semiconductor structure are also disclosed.

Abstract: A method of forming a semiconductor device includes the following steps. A substrate is patterned to form a fin structure. The fin structure is recessed to form a recess in the fin structure. An epitaxial source/drain region is grown from the recess. A first silicide layer is formed on the epitaxial source/drain region. A first portion of the first silicide layer is thinned, while leaving a second portion of the first silicide layer un-thinned. A metal contact is formed in contact with the thinned first portion of the first silicide layer.

Abstract: The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.

Abstract: Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to the present disclosure includes an active region having a channel region and a source/drain region, a gate structure over the channel region, a gate spacer layer disposed over the channel region and extending along a sidewall of the gate structure, an epitaxial source/drain feature over the source/drain region, a contact etch stop layer (CESL) disposed on the epitaxial source/drain feature and extending along a sidewall of the gate spacer layer, a source/drain contact disposed over the epitaxial source/drain feature, and a dielectric cap layer disposed over the gate structure, the gate spacer layer and at least a portion of the CESL. A sidewall of the source/drain contact is in direct contact with a sidewall of the CESL.

Abstract: A method according to the present disclosure includes receiving a workpiece that includes a first gate structure including a first cap layer thereon, a first source/drain contact adjacent the first gate structure, a second gate structure including a second cap layer thereon, a second source/drain contact, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, and a first dielectric layer over the ESL. The method further includes forming a butted contact opening to expose the first cap layer and the first source/drain contact, forming a butted contact in the butted contact opening, after the forming of the butted contact, depositing a second dielectric layer, forming a source/drain contact via opening through the second dielectric layer, the ESL layer, and the first dielectric layer to expose the second source/drain contact, and forming a source/drain contact via in the source/drain contact via opening.

Abstract: A method according to the present disclosure includes receiving a workpiece that includes a first gate structure including a first cap layer thereon, a first source/drain contact adjacent the first gate structure, a second gate structure including a second cap layer thereon, a second source/drain contact, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, and a first dielectric layer over the ESL. The method further includes forming a butted contact opening to expose the first cap layer and the first source/drain contact, forming a butted contact in the butted contact opening, after the forming of the butted contact, depositing a second dielectric layer, forming a source/drain contact via opening through the second dielectric layer, the ESL layer, and the first dielectric layer to expose the second source/drain contact, and forming a source/drain contact via in the source/drain contact via opening.

Abstract: A method according to the present disclosure includes receiving a workpiece that includes a first gate structure including a first cap layer thereon, a first source/drain contact adjacent the first gate structure, a second gate structure including a second cap layer thereon, a second source/drain contact, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, and a first dielectric layer over the ESL. The method further includes forming a butted contact opening to expose the first cap layer and the first source/drain contact, forming a butted contact in the butted contact opening, after the forming of the butted contact, depositing a second dielectric layer, forming a source/drain contact via opening through the second dielectric layer, the ESL layer, and the first dielectric layer to expose the second source/drain contact, and forming a source/drain contact via in the source/drain contact via opening.

Abstract: An inspecting and repairing device of additive manufacturing technology and a method thereof are provided. The inspecting and repairing device has a powder bed unit, a repairing unit, and an inspection unit. The powder bed unit has a powder platform, a powder spreading mechanism and a laser unit. The repairing unit has a processing mechanism. The inspection unit has a camera and a controller. According to an image of the powder platform captured by the camera, the controller can determine whether spreading powders, whether being overcome a powder spreading defect, or whether driving the processing mechanism to repair a surface of a workpiece.

Abstract: An inspecting and repairing device of additive manufacturing technology and a method thereof are provided. The inspecting and repairing device has a powder bed unit, a repairing unit, and an inspection unit. The powder bed unit has a powder platform, a powder spreading mechanism and a laser unit. The repairing unit has a processing mechanism. The inspection unit has a camera and a controller. According to an image of the powder platform captured by the camera, the controller can determine whether spreading powders, whether being overcome a powder spreading defect, or whether driving the processing mechanism to repair a surface of a workpiece.

Abstract: The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having a main feature; performing an optical proximity correction (OPC) process to the design layout; and thereafter, performing a jog reduction process to the design layout such that jog features of the design layout are reduced.

Abstract: The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having a main feature; performing an optical proximity correction (OPC) process to the design layout; and thereafter, performing a jog reduction process to the design layout such that jog features of the design layout are reduced.

Abstract: A control apparatus for a computer system, which includes a control signal generating unit for generating a input control signal, a selection signal generating unit for generating a selection signal, a control signal switching unit coupled to the control signal generating unit and the selection signal generating unit for outputting an enable signal according to the selection signal while receiving the input control signal, and a plurality of hardware signal control receivers coupled to the control signal switching unit, wherein a first hardware signal control receiver of the plurality of hardware signal control receivers is indicated according to the selection signal and informs an operating system of the computer system to execute an action according to the enable signal.

Abstract: A concentration detector is adapted to detect the concentration of a liquid fuel in a container. The concentration detector comprises a rotating mechanism positioned underneath the level of the liquid fuel and having a rotational center. A first float having a specific gravity less than the specific gravity of the liquid fuel, a volume equivalent to “V” and a mass equivalent to “M”. The distance between the mass center of the first float and the rotational center is “L”. A second float connected with the first float and having a specific gravity less than the specific gravity of the liquid fuel, a volume equivalent to “V” and a mass equivalent to “r*M”. The distance between the mass center of the second float and the rotational center is “L. The mass center of the second float, the rotational center and the mass center of the first float constitute an included angle of 120°.

Abstract: A concentration detector is disclosed, which is adapted to detect a concentration of a liquid fuel in a container. The concentration detector includes a rotating means positioned underneath a level of a liquid fuel and rotatable at an angle ? on a X-Y plane. The rotating means includes at least three floating objects connected with each other. Each floating object has a specific gravity less than a specific gravity of the liquid fuel ?. The floating objects are balanced according to a torque equation, F(?,?)=0, such that the rotating means is still under the level of the liquid fuel. While a concentration of the liquid fuel is changed and the angle ? of the rotating means is detected, the specific gravity of the liquid fuel ? is obtained from the torque equation, F(?,?)=0, and thereby computing the concentration of the liquid fuel.

Abstract: The present invention provides a concentration detection device, which is used to detect the concentration of liquid fuel within a container.

Abstract: A concentration detector is adapted to detect the concentration of a liquid fuel in a container. The concentration detector comprises a rotating mechanism positioned underneath the level of the liquid fuel and having a rotational center. A first float having a specific gravity less than the specific gravity of the liquid fuel, a volume equivalent to “V” and a mass equivalent to “M”. The distance between the mass center of the first float and the rotational center is “L”. A second float connected with the first float and having a specific gravity less than the specific gravity of the liquid fuel, a volume equivalent to “V” and a mass equivalent to “r*M”. The distance between the mass center of the second float and the rotational center is “L. The mass center of the second float, the rotational center and the mass center of the first float constitute an included angle of 120°.