Abstract: A method of forming patterns on a substrate by double nanoimprint processes includes providing a first replicate mold and a second replicate mold. The first replicate mold includes numerous first patterns. The second replicate mold includes at least one second pattern. The second pattern corresponds to at least one of the first patterns. Later, a first substrate is provided. A first polymeric compound layer is coated on the first substrate. Next, the first patterns are nanoimprinted into the first polymeric compound layer. Subsequently, the first substrate is etched by taking the first polymeric compound layer as a mask. After that, a second polymeric compound layer is coated on the first substrate. Later, the second pattern is nanoimprinted into the second polymeric compound layer. Finally, the first substrate is etched by taking the second polymeric compound layer as a mask.

Abstract: A handheld operation device includes a casing, a plurality of counterweight blocks and a counterweight module. The counterweight module is disposed on the casing. The counterweight module includes a base and a block plate. The block plate covers the base. One of the base and the block plate is capable of rotating with respect to the casing. The base has a plurality of accommodating recesses. The block plate has a broken hole formed thereon. One of the accommodating recesses is exposed in the broken hole such that one of the counterweight blocks is capable of passing through the broken hole and then being disposed in the accommodating recess.

Abstract: A handheld operation device includes a casing, a plurality of counterweight blocks and a counterweight module. The counterweight module is disposed on the casing. The counterweight module includes a base and a block plate. The block plate covers the base. One of the base and the block plate is capable of rotating with respect to the casing. The base has a plurality of accommodating recesses. The block plate has a broken hole formed thereon. One of the accommodating recesses is exposed in the broken hole such that one of the counterweight blocks is capable of passing through the broken hole and then being disposed in the accommodating recess.

Abstract: The disclosure is a metal oxide semiconductor transistor layout with higher effective channel width and higher component density. The layout discloses a common drain region with straight cross pattern, a plurality of common drain regions with lattice pattern, a common source region with straight cross pattern, a plurality of common source regions with lattice pattern, a hybrid grating with common drain region with straight cross pattern and common source region with straight cross pattern. The layout can increase the component density and the effective channel width as compared to conventional layout. The invention is further with the advantages of lower cost and can be operated in higher power.