Abstract: The present disclosure describes forming a semiconductor structure having an isolation layer surrounding a portion of a gate structure. The semiconductor structure includes a channel structure on a substrate, a first isolation layer on the substrate and surrounding the channel structure, and a gate structure on the channel structure and the first isolation layer. The gate structure includes a first portion having a first width and a second portion having a second width less than the first width. The semiconductor structure further includes a second isolation layer on the first isolation layer and surrounding the first portion of the gate structure.

Abstract: A dummy gate structure is formed over a plurality of active regions. The dummy gate structure extends in a first horizontal direction in a planar top view. The active regions each extend in a second horizontal direction in the planar top view. The second horizontal direction is different from the first horizontal direction. A plurality of source/drain components is formed over the active regions. A dielectric structure is formed over the source/drain components. The dummy gate structure is then removed. A removal of the dummy gate structure exposes a first segment of each of the active regions. A thickness of the first segment of each of the active regions is reduced in the first horizontal direction.

Abstract: The present disclosure describes forming a semiconductor structure having an isolation layer surrounding a sloped portion of a channel structure. The semiconductor structure includes a channel structure having first, second, and third portions on a substrate. The first portion has a first width. The second portion has a second width less than the first width. The third portion has a third width less than the second width. The semiconductor structure further includes a first isolation layer on the substrate and surrounding the first portion, a second isolation layer on the first isolation layer and surrounding the second portion of the channel structure, and a gate structure on the second isolation layer and surrounding the third portion of the channel structure.

Abstract: Noise semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a substrate, a fin structure over the substrate and extending lengthwise along a direction, the fin structure including a middle section sandwiched between a first end section and a second section along the direction, a gate structure wrapping over a channel region of the middle section, and a first source/drain feature and a second source/drain feature sandwiching the channel region of the middle section along the direction, The middle section includes a first semiconductor material and the first end section and the second end section include a second semiconductor material different from the first semiconductor material.

Abstract: A light sensing device is provided. The light sensing device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The light sensing device also includes a filter element over the light sensing region and a light shielding element over the semiconductor substrate and beside the filter element. The light sensing device further includes a dielectric element over the light shielding element and beside the filter element. A top of the light shielding element and a bottom of the dielectric element have different widths.

Abstract: A method for forming a light sensing device is provided. The method includes forming a light sensing region in a semiconductor substrate and forming a light shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the light shielding layer and partially removing the light shielding layer and the dielectric layer to form a light shielding element and a dielectric element. A top width of the light shielding element is greater than a bottom width of the dielectric element. The light shielding element and the dielectric element surround a recess, and the recess is aligned with the light sensing region. The method further includes forming a filter element in the recess.

Abstract: A semiconductor structure includes an ILD disposed over a semiconductive substrate, an isolation disposed between the semiconductive substrate and the ILD, and a conductive pad disposed within the semiconductive substrate, the isolation and the ILD. A top surface of the conductive pad is substantially parallel with two surfaces of the semiconductive substrate. The top surface of the conductive pad is between the two surfaces of the semiconductive substrate. Sidewalls of the conductive pad are in direct contact with the ILD and the isolation.

Abstract: A semiconductor structure includes an ILD disposed over a semiconductive substrate, an isolation disposed between the semiconductive substrate and the ILD, and a conductive pad disposed within the semiconductive substrate, the isolation and the ILD. A top surface of the conductive pad is substantially parallel with two surfaces of the semiconductive substrate. The top surface of the conductive pad is between the two surfaces of the semiconductive substrate. Sidewalls of the conductive pad are in direct contact with the ILD and the isolation.

Abstract: A method for forming a light sensing device is provided. The method includes forming a light sensing region in a semiconductor substrate and forming a light shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the light shielding layer and partially removing the light shielding layer and the dielectric layer to form a light shielding element and a dielectric element. A top width of the light shielding element is greater than a bottom width of the dielectric element. The light shielding element and the dielectric element surround a recess, and the recess is aligned with the light sensing region. The method further includes forming a filter element in the recess.

Abstract: A semiconductor structure includes a semiconductive substrate including a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, and an ILD disposed over the first side of the semiconductive substrate, and a conductive pad disposed within the semiconductive substrate and the ILD, and electrically connected to an interconnect structure. A top surface of the conductive pad is between the first side of the semiconductive substrate and the second side of the semiconductor substrate.

Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a filter element over the semiconductor substrate. The light sensing device also includes a light sensing region below the filter element and a light shielding element over the semiconductor substrate and surrounding a lower portion of the filter element. The light sensing device further includes a dielectric element over the light shielding element and surrounding an upper portion of the filter element. A top width of the light shielding element and a bottom width of the dielectric element are different from each other.

Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.

Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.

Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a filter element over the semiconductor substrate. The light sensing device also includes a light sensing region below the filter element and a light shielding element over the semiconductor substrate and surrounding a lower portion of the filter element. The light sensing device further includes a dielectric element over the light shielding element and surrounding an upper portion of the filter element. A top width of the light shielding element and a bottom width of the dielectric element are different from each other.

Abstract: A semiconductor structure includes a semiconductive substrate including a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, and an ILD disposed over the first side of the semiconductive substrate, and a conductive pad disposed within the semiconductive substrate and the ILD, and electrically connected to an interconnect structure. A top surface of the conductive pad is between the first side of the semiconductive substrate and the second side of the semiconductor substrate.

Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.

Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first light-sensing region and a second light-sensing region adjacent to the first light-sensing region. The image sensor device includes an isolation structure in the semiconductor substrate and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a reflective grid over the isolation structure and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a first color filter over the first light-sensing region and extending into a first trench of the reflective grid. The image sensor device includes a second color filter over the second light-sensing region and extending into the first trench to be in direct contact with the first color filter in the first trench.

Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The light sensing device also includes a filter element over the semiconductor substrate and aligned with the light sensing region. The filter element has a first portion and a second portion, and the first portion is between the second portion and the light sensing region. The light sensing device further includes a light shielding element over the semiconductor substrate and beside the first portion of the filter element. In addition, the light sensing device includes a dielectric element over the light shielding element and beside the second portion of the filter element. A top width of the light shielding element is greater than a bottom width of the dielectric element.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first light-sensing region and a second light-sensing region adjacent to the first light-sensing region. The image sensor device includes an isolation structure in the semiconductor substrate and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a reflective grid over the isolation structure and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a first color filter over the first light-sensing region and extending into a first trench of the reflective grid. The image sensor device includes a second color filter over the second light-sensing region and extending into the first trench to be in direct contact with the first color filter in the first trench.