Abstract: A method of manufacturing a semiconductor device includes forming first and second active regions; forming first to fifth gate electrodes, the second gate electrode being between the first and third gate electrodes, the fourth gate electrode being between the third and fifth gate electrodes; and selectively replacing at least one portion of at least one of the gate electrodes with an isolation dummy gate, including: replacing the first and fifth gate electrodes with first and second isolation dummy gates formed in trenches through the first and second active regions; and replacing a first portion of the third gate electrode overlying the second active region with a third isolation dummy gate formed in a first trench through the second active region, resulting in a second portion of the third gate over the first active region, and the third isolation dummy gate aligned with the second portion of the third gate.

Abstract: A device includes a first semiconductor strip and a second semiconductor strip extending longitudinally in a first direction, where the first semiconductor strip and the second semiconductor strip are spaced apart from each other in a second direction. The device also includes a power supply line located between the first semiconductor strip and the second semiconductor strip. A top surface of the power supply line is recessed in comparison to a top surface of the first semiconductor strip. A source feature is disposed on a source region of the first semiconductor strip, and a source contact electrically couples the source feature to the power supply line. The source contact includes a lateral portion contacting a top surface of the source feature, and a vertical portion extending along a sidewall of the source feature towards the power supply line to physically contact the power supply line.

Abstract: The present disclosure describes various non-planar semiconductor devices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the source, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions these various non-planar semiconductor devices.

Abstract: An integrated circuit includes a semiconductor substrate, an isolation region extending into, and overlying a bulk portion of, the semiconductor substrate, a buried conductive track comprising a portion in the isolation region, and a transistor having a source/drain region and a gate electrode. The source/drain region or the gate electrode is connected to the buried conductive track.

Abstract: The present invention relates to a method for treating or alleviating an osteoporosis in a subject. The method comprises steps of identifying the subject having the osteoporosis, and administering to the subject an effective amount of a composition that increases a level of Discoidin Domain Receptor 1 (DDR1) protein in the subject.

Abstract: An integrated circuit includes a semiconductor substrate, an isolation region extending into, and overlying a bulk portion of, the semiconductor substrate, a buried conductive track comprising a portion in the isolation region, and a transistor having a source/drain region and a gate electrode. The source/drain region or the gate electrode is connected to the buried conductive track.

Abstract: A device includes a first semiconductor strip and a second semiconductor strip extending longitudinally in a first direction, where the first semiconductor strip and the second semiconductor strip are spaced apart from each other in a second direction. The device also includes a power supply line located between the first semiconductor strip and the second semiconductor strip. A top surface of the power supply line is recessed in comparison to a top surface of the first semiconductor strip. A source feature is disposed on a source region of the first semiconductor strip, and a source contact electrically couples the source feature to the power supply line. The source contact includes a lateral portion contacting a top surface of the source feature, and a vertical portion extending along a sidewall of the source feature towards the power supply line to physically contact the power supply line.

Abstract: The present disclosure describes various non-planar semiconductor devices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the source, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions these various non-planar semiconductor devices.

Abstract: A method for forming a fin field effect transistor device structure is provided. The method includes forming a first spacer layer over a first fin structure and a second fin structure. The method also includes forming a power rail between the first fin structure and the second fin structure. The method further includes forming a second spacer layer over the first spacer layer and the power rail. In addition, the method includes forming a fin isolation structure over the power rail between the first fin structure and the second fin structure. The method also includes forming an epitaxial structure over the first fin structure and the second fin structure. The method further includes forming an inter-layer dielectric structure covering the epitaxial structure. In addition, the method includes forming an opening exposing the epitaxial structure, the power rail and the fin isolation structure. The method also includes filling the opening with a first contact structure.

Abstract: A device includes a first semiconductor strip and a second semiconductor strip extending longitudinally in a first direction, where the first semiconductor strip and the second semiconductor strip are spaced apart from each other in a second direction. The device also includes a power supply line located between the first semiconductor strip and the second semiconductor strip. A top surface of the power supply line is recessed in comparison to a top surface of the first semiconductor strip. A source feature is disposed on a source region of the first semiconductor strip, and a source contact electrically couples the source feature to the power supply line. The source contact includes a lateral portion contacting a top surface of the source feature, and a vertical portion extending along a sidewall of the source feature towards the power supply line to physically contact the power supply line.

Abstract: An ion implantation system comprising: a sample platform; an ion gun; an electrostatic linear accelerator; a direct current (DC) final energy magnet (FEM); and a processor. The processor is programmed to control: a wafer acceptance test instrument, a DC recipe calculator, a DC real energy calculator, and a tool energy shift verifier. The wafer acceptance test instrument is configured to apply a wafer acceptance test (WAT) recipe to a test sample on the sample platform. The DC recipe calculator is configured to calculate a recipe for the DC FEM. The DC real energy calculator is configured to calculate a real energy of the DC FEM. The tool energy shift verifier is configured to verify a tool energy shift of the DC FEM. The ion implantation system is configured to tune the DC FEM based on the verified tool energy shift, and obtain a peak magnetic field of the DC FEM.

Abstract: A device includes a first semiconductor strip and a second semiconductor strip extending longitudinally in a first direction, where the first semiconductor strip and the second semiconductor strip are spaced apart from each other in a second direction. The device also includes a power supply line located between the first semiconductor strip and the second semiconductor strip. A top surface of the power supply line is recessed in comparison to a top surface of the first semiconductor strip. A source feature is disposed on a source region of the first semiconductor strip, and a source contact electrically couples the source feature to the power supply line. The source contact includes a lateral portion contacting a top surface of the source feature, and a vertical portion extending along a sidewall of the source feature towards the power supply line to physically contact the power supply line.

Abstract: A method for forming a fin field effect transistor device structure is provided. The method includes forming a first spacer layer over a first fin structure and a second fin structure. The method also includes forming a power rail between the first fin structure and the second fin structure. The method further includes forming a second spacer layer over the first spacer layer and the power rail. In addition, the method includes forming a fin isolation structure over the power rail between the first fin structure and the second fin structure. The method also includes forming an epitaxial structure over the first fin structure and the second fin structure. The method further includes forming an inter-layer dielectric structure covering the epitaxial structure. In addition, the method includes forming an opening exposing the epitaxial structure, the power rail and the fin isolation structure. The method also includes filling the opening with a first contact structure.

Abstract: A fin field effect transistor device structure is provided. A fin field effect transistor device structure includes a first fin structure and a second fin structure on a substrate. The fin field effect transistor device structure also includes a spacer layer surrounding the first fin structure and the second fin structure. The fin field effect transistor device structure further includes a power rail over the spacer layer between the first fin structure and the second fin structure. In addition, the fin field effect transistor device structure includes a first contact structure covering the first fin structure and connected to the power rail.

Abstract: A semiconductor structure includes a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin. The first and the second semiconductor fins extend lengthwise along a first direction over a substrate. A metal gate structure is disposed over the first and second semiconductor fins, the metal gate structure extending lengthwise along a second direction perpendicular to the first direction. A first epitaxial source/drain (S/D) feature is disposed over the first semiconductor fin, and a second epitaxial S/D feature is disposed over the second semiconductor fin. An interlayer dielectric (ILD) layer is disposed over the first and the second epitaxial S/D features. And an S/D contact is disposed directly above the first and second epitaxial S/D features. The S/D contact directly contacts the first epitaxial S/D feature, and the S/D contact is isolated from the second epitaxial S/D feature by the ILD layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first epitaxial structure and a second epitaxial structure spaced apart from the first epitaxial structure. The semiconductor device structure also includes a conductive contact electrically connected to the first epitaxial structure and a first conductive via over the conductive contact. The semiconductor device structure further includes a second conductive via directly above the second epitaxial structure. The second conductive via is longer than the first conductive via.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a first source/drain structure and a second source/drain structure over a semiconductor substrate. The method also includes forming a dielectric layer over the first source/drain structure and the second source/drain structure and forming a conductive contact on the first source/drain structure. The method further includes forming a first conductive via over the conductive contact, and the first conductive via is misaligned with the first source/drain structure. In addition, the method includes forming a second conductive via directly above the second source/drain structure, and the second conductive via is longer than the first conductive via.

Abstract: A semiconductor structure includes a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin, a first epitaxial source/drain (S/D) feature disposed over the first semiconductor fin, a second epitaxial S/D feature disposed over the second semiconductor fin, an interlayer dielectric (ILD) layer disposed over the first and the second epitaxial S/D features, and an S/D contact disposed over and contacting the first epitaxial S/D feature, where a portion of the S/D contact laterally extends over the second epitaxial S/D feature, and the portion is separated from the second epitaxial S/D feature by the ILD layer.

Abstract: The present disclosure describes various non-planar semiconductor devices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the source, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions these various non-planar semiconductor devices.

Abstract: An integrated circuit includes a first and second active region, a first conductive structure, an insulating region, a set of gates and a set of contacts. The first and second active region are in a substrate, extend in a first direction, are located on a first level, and being separated from one another in a second direction. The first conductive structure extends in the first direction, is located on the first level, and is between the first and second active region. The insulating region is located on at least the first level, and is between the first and second active region and the first conductive structure. The set of gates extend in the second direction, overlap the first conductive structure, and is located on a second level. The set of contacts extend in the second direction, overlap the first conductive structure, and is located on the second level.