Abstract: A semiconductor structure includes a first circuit area having first fin active regions extending lengthwise along a first direction, each of the first fin active regions includes first channel regions; a second circuit area having second fin active regions extending lengthwise along the first direction, each of the second fin active regions includes second channel regions; a gate connector area between and separating the first and the second circuit areas, the gate connector area having filter fins extending lengthwise along the first direction; and a gate structure extending across the first circuit area, the gate connector area, and the second circuit area along a second direction over the first and second channel regions and the filter fins. A portion of the gate structure in the gate connector area has a greater resistivity than portions of the gate structure in the first and the second circuit areas.

Abstract: The present disclosure generally relates to compounds class I HDAC inhibitors, their production and applications. The compounds possess epigenetic immunomodulatory activities in the tumor microenvironment (TME) and thus inhibit growth of tumor cells.

Abstract: A test method is for testing a decision feedback equalization (DFE) of a memory device is provided. The memory device includes a memory bank. The test method includes: providing a first test data pattern having a first data transition frequency and a second test data pattern having a second data transition frequency different from the first data transition frequency; writing the first test data pattern into a first memory section of the memory bank with a first DFE; writing the second test data pattern into a second memory section of the memory bank with the first DFE; reading a first reading data pattern stored in the first memory section and a second reading data pattern stored in the second memory section; and generating a test result signal according to the first reading data pattern and the second reading data pattern.

Abstract: A test method is for testing a decision feedback equalization (DFE) of a memory device is provided. The memory device includes a memory bank. The test method includes: providing a first test data pattern having a first data transition frequency and a second test data pattern having a second data transition frequency different from the first data transition frequency; writing the first test data pattern into a first memory section of the memory bank with a first DFE; writing the second test data pattern into a second memory section of the memory bank with the first DFE; reading a first reading data pattern stored in the first memory section and a second reading data pattern stored in the second memory section; and generating a test result signal according to the first reading data pattern and the second reading data pattern.

Abstract: A display device includes a back cover, a front frame, a backlight module, and a display panel. The back cover has at least one supporting structure and at least one position-limiting structure. The front frame is assembled to the back cover. The backlight module is disposed between the back cover and the front frame and includes a light guide plate (LGP), and the supporting structure supports a bottom surface of the LGP. The display panel is disposed between the backlight module and the front frame, the position-limiting structure is aligned to a side surface of the display panel, and a position of the display panel is limited by the position-limiting structure.