Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer over the substrate, a first photodiode and a second photodiode in the first epitaxial layer, and a trench isolation structure between the first photodiode and the second photodiode. The first photodiode includes a first doped region having a first conductivity type. The first photodiode includes a second doped region, overlying the first doped region, having a second conductivity type different than the first conductivity type. The first photodiode includes a third doped region, overlying the first doped region, having the second conductivity type. A first distance between a sidewall of the third doped region and an uppermost surface of the first epitaxial layer is between about a hundredth to about a fifth of a second distance between a sidewall of the trench isolation structure and the uppermost surface of the first epitaxial layer.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer over the substrate, a second epitaxial layer over the first epitaxial layer, and a photodiode in at least one of the first epitaxial layer or the second epitaxial layer. The photodiode includes a first doped region and a second doped region over the first doped region.

Abstract: A pixel of an image sensor includes: a semiconductor material substrate; a photosensitive region formed in the substrate, the photosensitive region generating photo-induced electrical charge in response to illumination with light; a storage node formed in the substrate proximate to the photosensitive region, the storage node selectively receiving and storing photo-induced electrical charge generated by the photosensitive region; a transfer gate structure formed between the photosensitive region and the storage node to regulate a transfer of the photo-induced electrical charge therebetween; an inter-layer dielectric (ILD) formed over the transfer gate structure; and a light-shielding structure contained within the ILD and covering the transfer gate structure so as to inhibit light from reaching the transfer gate structure, the light-shielding structure including an indentation on a first end surface of the light-shielding structure, which first end surface is proximate to the transfer gate structure, wherein a

Abstract: A semiconductor device is provided. The semiconductor device includes one or more dielectric layers over a photodiode in a substrate. The semiconductor device includes a radiation channeling structure extending through the one or more dielectric layers, wherein the radiation channeling structure overlies the photodiode. The semiconductor device includes a lens overlying the radiation channeling structure. The radiation channeling structure includes a body having a refractive index higher than a refractive index of a material at least partially surrounding the body.

Abstract: A network switch and a network switch system thereof are provided. The network switch includes a plurality of connection ports and a processing circuit. When any of the connection ports receives a first abnormal message packet and one of the connection ports is in a disabled state, the processing circuit sets the connection port in the disabled state to switch to an enabled state, and the processing circuit does not forward the first abnormal message packet in the single loop network. When one of the connection ports is abnormal and each of the connection ports forming the single loop network is in the enabled state, the processing circuit sets the abnormal connection port to switch to the disabled state, and transmits a second abnormal message packet to other network switches in the single loop network through another connection port that is not abnormal.

Abstract: A network switch and a network switch system thereof are provided. The network switch includes a plurality of connection ports and a processing circuit. When any of the connection ports receives a first abnormal message packet and one of the connection ports is in a disabled state, the processing circuit sets the connection port in the disabled state to switch to an enabled state, and the processing circuit does not forward the first abnormal message packet in the single loop network. When one of the connection ports is abnormal and each of the connection ports forming the single loop network is in the enabled state, the processing circuit sets the abnormal connection port to switch to the disabled state, and transmits a second abnormal message packet to other network switches in the single loop network through another connection port that is not abnormal.

Abstract: A method for determining switching of the sleep mode for a device is provided. The device and a base station have several connections therebetween. In the determining method, one of the connections is first provided and it is determined whether the connection is realtime or non-realtime. It is then determined whether or not the realtime and non-realtime connections satisfy the condition for entering the sleep mode according to a first condition and a second condition, respectively. If the connection does not satisfy the condition for entering the sleep mode, the device enters the normal mode. If the connection satisfies the condition for entering the sleep mode, then the foregoing steps are repeated till the connections have all been checked. If all of the connections satisfy the condition for entering the sleep mode, the device enters the sleep mode.

Abstract: An apparatus and a method for performing video decoding processes in parallel are provided. The method is adapted for utilizing a first cluster and a second cluster of a processor to perform the video data decoding process in parallel. The method includes performing a VLD process to the video data with the first cluster, so as to obtain a plurality of coefficients and then performing an IZ process, an IQ process, and an IDCT process to the coefficients with the second cluster, so as to obtain a plurality of pixels values of the video data. When the first cluster decodes a coefficient of the video data, the second cluster performs the IZ, IQ, and IDCT processes to a coefficient previously decoded by the second cluster of the video data. Accordingly, a parallel process is realized and the decoding speed is increased.

Abstract: A method for determining switching of the sleep mode for a device is provided. The device and a base station have several connections therebetween. In the determining method, one of the connections is first provided and it is determined whether the connection is realtime or non-realtime. It is then determined whether or not the realtime and non-realtime connections satisfy the condition for entering the sleep mode according to a first condition and a second condition, respectively. If the connection does not satisfy the condition for entering the sleep mode, the device enters the normal mode. If the connection satisfies the condition for entering the sleep mode, then the foregoing steps are repeated till the connections have all been checked. If all of the connections satisfy the condition for entering the sleep mode, the device enters the sleep mode.

Abstract: An apparatus and a method for performing video decoding processes in parallel are provided. The method is adapted for utilizing a first cluster and a second cluster of a processor to perform the video data decoding process in parallel. The method includes performing a VLD process to the video data with the first cluster, so as to obtain a plurality of coefficients and then performing an IZ process, an IQ process, and an IDCT process to the coefficients with the second cluster, so as to obtain a plurality of pixels values of the video data. When the first cluster decodes a coefficient of the video data, the second cluster performs the IZ, IQ, and IDCT processes to a coefficient previously decoded by the second cluster of the video data. Accordingly, a parallel process is realized and the decoding speed is increased.