Patents by Inventor Yi-huan Chen
Yi-huan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11527531Abstract: In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.Type: GrantFiled: May 15, 2019Date of Patent: December 13, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Huan Chen, Chien-Chih Chou, Ta-Wei Lin, Hsiao-Chin Tuan, Alexander Kalnitsky, Kong-Beng Thei, Shi-Chuang Hsiao, Yu-Hong Kuo
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Patent number: 11508845Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate of a first conductivity; a first region of the first conductivity formed in the substrate; a second region of the first conductivity formed in the first region, wherein the second region has a higher doping density than the first region; a source region of a second conductivity formed in the second region; a drain region of the second conductivity formed in the substrate; a pickup region of the first conductivity formed in the second region and adjacent to the source region; and a resist protective oxide (RPO) layer formed on a top surface of the second region. An associated fabricating method is also disclosed.Type: GrantFiled: September 22, 2020Date of Patent: November 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chen-Liang Chu, Ta-Yuan Kung, Ker-Hsiao Huo, Yi-Huan Chen
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Publication number: 20220367654Abstract: In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.Type: ApplicationFiled: July 27, 2022Publication date: November 17, 2022Inventors: Yi-Huan Chen, Kong-Beng Thei, Chien-Chih Chou, Alexander Kalnitsky, Szu-Hsien Liu, Huan-Chih Yuan
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Publication number: 20220367709Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate dielectric layer; and a pair of source/drain regions on opposing sides of the gate dielectric layer.Type: ApplicationFiled: May 14, 2021Publication date: November 17, 2022Inventors: YI-HUAN CHEN, CHIEN-CHIH CHOU, SZU-HSIEN LIU, KONG-BENG THEI, HUAN-CHIH YUAN, JHU-MIN SONG
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Publication number: 20220367655Abstract: A method to form a transistor device with a recessed gate structure is provided. In one embodiment, a gate structure is formed overlying a device region and an isolation structure. The gate structure separates a device doping well along a first direction with a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. A pair of source/drain regions in is formed the device region on opposite sides of the gate structure. A sidewall spacer is formed extending along sidewalls of the gate structure, where a top surface of the sidewall spacer is substantially flush with the top surface of the gate structure. A resistive protection layer is then formed on the sidewall spacer and covering the pair of recess regions.Type: ApplicationFiled: July 27, 2022Publication date: November 17, 2022Inventors: Chen-Liang Chu, Chien-Chih Chou, Chih-Chang Cheng, Yi-Huan Chen, Kong-Beng Thei, Ming-Ta Lei, Ruey-Hsin Liu, Ta-Yuan Kung
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Publication number: 20220367708Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a doped region within the substrate; a pair of source/drain regions extending along a first direction on opposite sides of the doped region; a gate electrode disposed in the doped region, wherein the gate electrode has a plurality of first segments extending in parallel along the first direction; and a protection structure over the substrate and at least partially overlaps the gate electrode.Type: ApplicationFiled: May 14, 2021Publication date: November 17, 2022Inventors: YI-HUAN CHEN, CHIEN-CHIH CHOU, SZU-HSIEN LIU, KONG-BENG THEI
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Publication number: 20220359502Abstract: A method of manufacturing a semiconductor device, including: forming a dielectric layer configured to be a gate oxide contacting the second well on the substrate, wherein the dielectric layer is single-layered dielectric layer and includes a contact via penetrating through the dielectric layer; and forming a patterned conductive layer contacting the dielectric layer, wherein the patterned conductive layer includes a first conductive portion isolated from the second well and configured to be a gate electrode, and a second conductive portion coupled to the first well via the contact via; wherein the first conductive portion is leveled with the second conductive portion, and the first conductive portion and the second conductive portion are formed entirely on a topmost surface of the dielectric layer; wherein the dielectric layer and the first conductive portion collectively serve as a gate of the transistor, and the transistor is configured as a high-voltage transistor.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Inventors: YI-SHENG CHEN, KONG-BENG THEI, FU-JIER FAN, JUNG-HUI KAO, YI-HUAN CHEN, KAU-CHU LIN
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Publication number: 20220352161Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed over the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.Type: ApplicationFiled: July 19, 2022Publication date: November 3, 2022Inventors: Yi-Huan Chen, Chien-Chih Chou, Alexander Kalnitsky, Kong-Beng Thei, Ming Chyi Liu, Shih-Chung Hsiao, Jhih-Bin Chen
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Publication number: 20220352152Abstract: In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.Type: ApplicationFiled: July 18, 2022Publication date: November 3, 2022Inventors: Yi-Huan Chen, Chien-Chih Chou, Ta-Wei Lin, Hsiao-Chin Tuan, Alexander Kalnitsky, Kong-Beng Thei, Shi-Chuang Hsiao, Yu-Hong Kuo
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Patent number: 11469307Abstract: In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.Type: GrantFiled: November 16, 2020Date of Patent: October 11, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Huan Chen, Kong-Beng Thei, Chien-Chih Chou, Alexander Kalnitsky, Szu-Hsien Liu, Huan-Chih Yuan
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Patent number: 11444169Abstract: A transistor device with a recessed gate structure is provided. In some embodiments, the transistor device comprises a semiconductor substrate comprising a device region surrounded by an isolation structure and a pair of source/drain regions disposed in the device region and laterally spaced apart one from another in a first direction. A gate structure overlies the device region and the isolation structure and arranged between the pair of source/drain regions. The gate structure comprises a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. A channel region is disposed in the device region underneath the gate structure. The channel region has a channel width extending in the second direction from one of the recess regions to the other one of the recess regions.Type: GrantFiled: July 15, 2020Date of Patent: September 13, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Liang Chu, Chien-Chih Chou, Chih-Chang Cheng, Yi-Huan Chen, Kong-Beng Thei, Ming-Ta Lei, Ruey-Hsin Liu, Ta-Yuan Kung
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Publication number: 20220271146Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a pair of source/drain regions disposed in a semiconductor substrate, where the source/drain regions are laterally spaced. A gate electrode is disposed over the semiconductor substrate between the source/drain regions. Sidewall spacers are disposed over the semiconductor substrate on opposite sides of the gate electrode. A silicide blocking structure is disposed over the sidewalls spacers, where respective sides of the source/drain regions facing the gate electrode are spaced apart from outer sides of the sidewall spacers and are substantially aligned with outer sidewalls of the silicide blocking structure.Type: ApplicationFiled: February 9, 2022Publication date: August 25, 2022Inventors: Kong-Beng Thei, Chien-Chih Chou, Hsiao-Chin Tuan, Yi-Huan Chen, Alexander Kalnitsky
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Patent number: 11417649Abstract: A semiconductor device includes a transistor. The transistor includes an active region in a substrate, a patterned conductive layer being a portion of an interconnection layer for routing, and an insulating layer extending over the substrate and configured to insulate the active region from the patterned conductive layer. The patterned conductive layer and the insulating layer serve as a gate of the transistor.Type: GrantFiled: November 30, 2018Date of Patent: August 16, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Yi-Sheng Chen, Kong-Beng Thei, Fu-Jier Fan, Jung-Hui Kao, Yi-Huan Chen, Kau-Chu Lin
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Patent number: 11410999Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed over the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.Type: GrantFiled: February 21, 2020Date of Patent: August 9, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Huan Chen, Chien-Chih Chou, Alexander Kalnitsky, Kong-Beng Thei, Ming Chyi Liu, Shih-Chung Hsiao, Jhih-Bin Chen
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Patent number: 11302691Abstract: The present disclosure relates to an integrated circuit (IC) and a method of formation. In some embodiments, a low voltage region and a high voltage region are integrated in a substrate. A low voltage transistor device is disposed in the low voltage region and comprises a low voltage gate electrode and a low voltage gate dielectric separating the low voltage gate electrode from the substrate. A first interlayer dielectric layer is disposed over the substrate surrounding the low voltage gate electrode and the low voltage gate dielectric. A high voltage transistor device is disposed in the high voltage region and comprises a high voltage gate electrode disposed on the first interlayer dielectric layer.Type: GrantFiled: September 2, 2020Date of Patent: April 12, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kong-Beng Thei, Chien-Chih Chou, Fu-Jier Fan, Hsiao-Chin Tuan, Yi-Huan Chen, Alexander Kalnitsky, Yi-Sheng Chen
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Publication number: 20220102518Abstract: In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.Type: ApplicationFiled: November 16, 2020Publication date: March 31, 2022Inventors: Yi-Huan Chen, Kong-Beng Thei, Chien-Chih Chou, Alexander Kalnitsky, Szu-Hsien Liu, Huan-Chih Yuan
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Patent number: 11276684Abstract: Some embodiments relate to an integrated circuit (IC) that includes a semiconductor substrate. A shallow trench isolation region downwardly extends into the frontside of the semiconductor substrate and is filled with dielectric material. A first capacitor plate and a second capacitor plate are disposed in the shallow trench isolation region. The first capacitor plate and the second capacitor plate have first and second sidewall structures, respectively, that are substantially parallel to one another and that are separated from one another by the dielectric material of the shallow trench isolation region.Type: GrantFiled: September 23, 2019Date of Patent: March 15, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Huan Chen, Chien-Chih Chou, Alexander Kalnitsky, Kong-Beng Thei
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Patent number: 11251286Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a pair of source/drain regions disposed in a semiconductor substrate, where the source/drain regions are laterally spaced. A gate electrode is disposed over the semiconductor substrate between the source/drain regions. Sidewall spacers are disposed over the semiconductor substrate on opposite sides of the gate electrode. A silicide blocking structure is disposed over the sidewalls spacers, where respective sides of the source/drain regions facing the gate electrode are spaced apart from outer sides of the sidewall spacers and are substantially aligned with outer sidewalls of the silicide blocking structure.Type: GrantFiled: November 25, 2019Date of Patent: February 15, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kong-Beng Thei, Chien-Chih Chou, Hsiao-Chin Tuan, Yi-Huan Chen, Alexander Kalnitsky
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Publication number: 20210384082Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a gate dielectric structure over a substrate. A metal layer overlies the gate dielectric structure. A conductive layer overlies the metal layer. A polysilicon layer contacts opposing sides of the conductive layer. A bottom surface of the polysilicon layer is aligned with a bottom surface of the conductive layer. A dielectric layer overlies the polysilicon layer. The dielectric layer continuously extends from sidewalls of the polysilicon layer to an upper surface of the conductive layer.Type: ApplicationFiled: August 19, 2021Publication date: December 9, 2021Inventors: Yi-Huan Chen, Chien-Chih Chou, Ta-Wei Lin, Hsiao-Chin Tuan, Alexander Kalnitsky, Kong-Beng Thei, Chia-Hong Wu
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Patent number: 11133226Abstract: Various embodiments of the present disclosure are directed towards a method for forming a fully silicided (FUSI) gated device, the method including: forming a masking layer onto a gate structure over a substrate, the gate structure comprising a polysilicon layer. Forming a first source region and a first drain region on opposing sides of the gate structure within the substrate, the gate structure is formed before the first source and drain regions. Performing a first removal process to remove a portion of the masking layer and expose an upper surface of the polysilicon layer. The first source and drain regions are formed before the first removal process. Forming a conductive layer directly contacting the upper surface of the polysilicon layer. The conductive layer is formed after the first removal process. Converting the conductive layer and polysilicon layer into a FUSI layer. The FUSI layer is thin and uniform in thickness.Type: GrantFiled: October 24, 2018Date of Patent: September 28, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Huan Chen, Chien-Chih Chou, Ta-Wei Lin, Hsiao-Chin Tuan, Alexander Kalnitsky, Kong-Beng Thei, Chia-Hong Wu