Abstract: A vertical organic transistor is disclosed, which includes at least: a collector contact layer disposed on a substrate; a first organic semiconductor layer disposed on the collector contact layer; a base contact layer disposed on the first organic semiconductor layer, wherein the base contact layer comprises no less than two layers of hetero-metal layers or hetero-conductive organic layers; a second organic semiconductor layer disposed on the base contact layer; and an emitter contact layer disposed on the second organic semiconductor layer. Device properties such as output current and Ion/Ioff rate can be improved by using the vertical organic transistor of this invention.

Abstract: A third-order transconductance (gm3) cancellation is utilized to obtain a highly linear mixer. Transistors obtain good linearity with complementary gm3 values. The transistor thus obtained can be operated in a wide bandwidth and is applicable to various frequency specifications of systems, like Bluetooth, wireless LAN, Ultra-Wide Band (UWB), etc. Then the transistors are applied to design a transconductance-stage input of the mixer. Hence, the present invention can be widely applied to receiver modules and be realized with a low-cost CMOS transistor.

Abstract: An alternating current (AC) light emitting device includes an AC light emitting diode (LED) module and a waveform modulation unit. The AC LED module includes at least two sets of micro-diodes. The waveform modulation unit coupled between the AC LED module and an AC voltage source modulates a waveform of the AC voltage source.

Abstract: The present invention improves a frequency divider circuit so that the frequency divider further obtains a capability of operating an injection-locking frequency division without changing or adding any component; and, the frequency divider operates under low voltage and low power consumption yet in high frequency, where the present invention can be use in related fields of radio frequency and optoelectronic communication.

Abstract: The present invention is an optical fiber system and method for carrying both CATV and Ethernet signals. The digital signals are translated into higher band by a direct up/down conversion so that analog signals and digital signals are treated as different frequency bands of electrical signals. Then, all the signals are mixed/divided by a power combiner/divider. And then, by using optoelectronic devices, the signals are processed with optoelectronic conversion. The converted optical signals are transmitted in a fiber or a related optical channel having low channel loss yet high capacity. To sum up, the present invention can transmit digital signals together with analog signals in a single wavelength to save the cost of an optical signal system and to provide a convenience on rearranging the system.

Abstract: A mixer has a cascode configuration. With the configuration, the mixer is operated under a low voltage. And, the present invention has a good circuit gain, a good broadband operation and a low power consumption. The mixer can be realized with a CMOS transistor. Hence, the present invention is fit to be applied in a receiver module.

Abstract: Disclosed is an organic non-volatile memory (ONVM) material including nanoparticles evenly dispersed in a first polymer. The nanoparticles have a metal core covered by a second polymer to form a core/shell structure, and the first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material of the invention has high uniformity, thereby stabilizing the electric properties of the memory device, such as increasing rewrite counts, increasing data retention time, reducing driving voltage, reducing write current, and enhancing current on/off ratio.

Abstract: A power amplifier with an active bias circuit and operating method thereof are provided. The power amplifier comprises a power amplifier transistor and an active bias circuit. The active circuit receives input power and applies a bias voltage to the gate of the power amplifier transistor. The bias voltage will increase in correspondence with an increase in the input power. Therefore, the power amplifier of this invention has excellent output power, linearity of operation and power-added efficiency in a range of input power.

Abstract: A frequency divider, which has a cross-coupled inductor-capacitor (LC) structure or a ring structure, is inputted with a direct current (DC) control voltage from an input terminal. By doing so, the frequency divider can adjust an oscillation frequency; and further compensate the input power sensitivity, lower the power consumption and increase the division range. The frequency divider can be used in high-band/high-speed digital or analog communication systems.

Abstract: A nano compound. The nano compound includes a metal or oxide thereof and an organic compound capable of oxidation and reduction bonded to the metal or oxide thereof. The invention also provides an organic memory device including the nano compound.

Abstract: A vertical organic transistor is disclosed, which includes at least: a collector contact layer disposed on a substrate; a first organic semiconductor layer disposed on the collector contact layer; a base contact layer disposed on the first organic semiconductor layer, wherein the base contact layer comprises no less than two layers of hetero-metal layers or hetero-conductive organic layers; a second organic semiconductor layer disposed on the base contact layer; and an emitter contact layer disposed on the second organic semiconductor layer. Device properties such as output current and Ion/Ioff rate can be improved by using the vertical organic transistor of this invention.

Abstract: The present invention improves a frequency divider circuit so that the frequency divider further obtains a capability of operating an injection-locking frequency division without changing or adding any component; and, the frequency divider operates under low voltage and low power consumption yet in high frequency, where the present invention can be use in related fields of radio frequency and optoelectronic communication.

Abstract: A single wavelength fiber-optic communication system that mixes an Ethernet signal with a radio frequency signal is disclosed. The system includes an Ethernet signal module, a radio frequency signal module, a mixer module and a receiver module. The Ethernet signal module provides an Ethernet signal. The radio frequency signal module provides a radio frequency signal. The mixer module provides an optical mixed signal by means of mixing the Ethernet signal with the radio signal at a single wavelength. The receiver module transforms the optical mixed signal into the radio frequency signal and a digital signal that contains the Ethernet signal.

Abstract: The present invention is an optical fiber system and method for carrying both CATV and Ethernet signals. The digital signals are translated into higher band by a direct up/down conversion so that analog signals and digital signals are treated as different frequency bands of electrical signals. Then, all the signals are mixed/divided by a power combiner/divider. And then, by using optoelectronic devices, the signals are processed with optoelectronic conversion. The converted optical signals are transmitted in a fiber or a related optical channel having low channel loss yet high capacity. To sum up, the present invention can transmit digital signals together with analog signals in a single wavelength to save the cost of an optical signal system and to provide a convenience on rearranging the system.

Abstract: The present invention uses a GaN transistor grown over a Si substrate, which is obtained by etching through lithography or a plasma etching; and is used as a pressure sensor with great sensitivity by utilizing the characteristic of piezoelectric effect of GaN with the ability of magnifying signals and providing very high sensitivity; and is integrated into an IC, or into a micro electro-mechanical system of Si semiconductor.

Abstract: A power amplifier with an active bias circuit and operating method thereof is provided. The power amplifier comprises a power amplifier transistor and an active bias circuit. The active circuit receives input power and applies a bias voltage to the gate of the power amplifier transistor. The bias voltage will increase in correspondence with an increase in the input power. Therefore, the power amplifier of this invention has excellent output power, linearity of operation and power-added efficiency in a range of input power.

Abstract: A GaAs semiconductor device comprising a FET (field effect transistor), and a low dielectric constant passivation. The passivation protects the surface of the active area of the FET under the FET. The FET is a high electron mobility transistor or a pseudomorphic high electron mobility transistor. The passivation is formed by spin coating and made of a low dielectric constant compound. The low dielectric constant compound is Benzocyclobutene. Advantages are a simple manufacturing process, fewer surface defects, and improved device performance. Therefore, a superior device is provided at a reduced production cost.

Abstract: A bandwidth enhancement method by adding a peaking capacitor to a transimpedance amplifier for creating peaking effect is to add a peaking capacitor to a transimpedance amplifier for obtaining an extra pole that can alter circuit phase and enhance bandwidth of the transimpedance amplifier without changing the framework and DC gain of the original amplifier circuit.