Patents by Inventor Yi Jin

Yi Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11511125
    Abstract: Described are methods, devices, and systems for a novel, easy to use treatment for spasticity that does not involve medication. Methods and devices herein use low-frequency repetitive magnetic fields to enhance communication in the spinal nerve, thereby allowing improved relaxation, control, and coordination in a muscle.
    Type: Grant
    Filed: April 22, 2020
    Date of Patent: November 29, 2022
    Assignee: Wave Neuroscience, Inc.
    Inventor: Yi Jin
  • Patent number: 11515897
    Abstract: A data processing system includes a storage medium, and a controller including a data processing block, configured to receive data from a host, transmit the received data to the storage medium, read data from the storage medium in response to a read request from the host, and decode the read data by the data processing block according to multiple decoding modes. The data processing block includes a first decoder and a second decoder, and is configured to manage the first decoder and the second decoder to run the decoding for the read data, and activate a fast decoding having shorter latency than a normal decoding after a fast decoding condition is satisfied.
    Type: Grant
    Filed: August 7, 2020
    Date of Patent: November 29, 2022
    Assignee: SK hynix Inc.
    Inventors: Kyoung Lae Cho, Soo Jin Kim, Naveen Kumar, Aman Bhatia, Yi-Min Lin, Chenrong Xiong, Fan Zhang, Yu Cai, Abhiram Prabahkar
  • Publication number: 20220373050
    Abstract: A method and a system for monitoring wear of a braking frictional pad of a motor vehicle, the motor vehicle including a brake device acting on a vehicle wheel, the brake device including a braking frictional pad that is non-rotatable relative to the vehicle wheel and is linearly movable parallel to a rotational axis of the vehicle wheel; a brake piston configured to drive the braking frictional pad; and an electric parking brake or an electric mechanical brake, the electric parking brake or the electric mechanical brake having a drive motor and a piston driving part driven by the drive motor to be linearly movable, the piston driving part being configured to, when the motor vehicle is braking, drive the brake piston to contact the braking frictional pad and in turn drive the braking frictional pad to move.
    Type: Application
    Filed: May 17, 2022
    Publication date: November 24, 2022
    Inventors: Yongxing Jin, Ming Yuan, Yi Yu
  • Publication number: 20220373051
    Abstract: A method and a system for monitoring wear of a braking frictional pad of a motor vehicle, includes stopping the motor vehicle stably on a horizontal or substantially horizontal plane; determining a current fluid level in a brake fluid reservoir; determining a volume difference (?VL) of the brake fluid in the brake fluid reservoir by comparing the determined current fluid level with a predetermined reference fluid level; when a thickness loss of a braking frictional pad equipped for a front vehicle wheel or a rear vehicle wheel is known, determining a thickness loss of a braking frictional pad assigned for the other front vehicle wheel or the other rear vehicle wheel based on the volume difference of the brake fluid in the brake fluid reservoir and a diameter of a brake piston of the respective brake device.
    Type: Application
    Filed: May 17, 2022
    Publication date: November 24, 2022
    Inventors: Yongxing Jin, Ming Yuan, Yi Yu
  • Publication number: 20220375876
    Abstract: A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer is disposed on and forms an interface with the nucleation layer. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. Spacings among adjacent peaks of the oscillating function change from wide to narrow with respect to a first reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.
    Type: Application
    Filed: April 12, 2021
    Publication date: November 24, 2022
    Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
  • Patent number: 11501976
    Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.
    Type: Grant
    Filed: February 19, 2021
    Date of Patent: November 15, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Seiichi Watanabe, Kazuki Narishige, Xinhe Jerry Lim, Jianfeng Xu, Yi Hao Ng, Zhenkang Max Liang, Yujun Nicholas Loo, Chiew Wah Yap, Bin Zhao, Chai Jin Chua, Takehito Watanabe, Koji Kawamura, Kenji Komatsu, Li Jin, Wee Teck Tan, Dali Liu
  • Patent number: 11494585
    Abstract: A method and a system for establishing a light source information prediction model are provided. A plurality of training images are captured for a target object. A white object is attached on the target object. True light source information of the training images is obtained according to a color of the white object in each of the training images. A neural network model is trained according to the training images and the true light source information, and a plurality of pieces of predicted light source information is generated according to the neural network model during the training. A learning rate for training the neural network model is adaptively adjusted based on the predicted light source information.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: November 8, 2022
    Assignee: Acer Incorporated
    Inventors: Yi-Jin Huang, Chien-Hung Li, Yin-Hsong Hsu
  • Patent number: 11485201
    Abstract: A vehicle window system includes a vehicle door that has a window region. The system includes a fixed window having an exterior surface and an interior surface, a division bar, and a movable window. The fixed window is arranged in a first portion of the window region, and the division bar is arranged along a first region of the interior surface. The movable window is arranged in a second portion of the window region and is configured to close against the division bar. The division bar is not directly visible from outside of the vehicle door when viewed at an elevation of the fixed window. To illustrate, the movable window can be configured to move vertically within the first portion of the window region and the fixed window arranged at the top of the window region and the division bar is arranged substantially horizontally along the interior surface.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: November 1, 2022
    Assignee: Rivian IP Holdings, LLC
    Inventors: Rajinder P. Singh, Richard Maciejewski, Shun Yi Jin, Mark Taylor
  • Publication number: 20220340690
    Abstract: Provided is a low-molecular-weight holothurian glycosarninoglycan, with the constituent units thereof being a glucuronic acid group, an N-acetaminogalactose group and a fucose group, and a sulfate ester group or acetyl ester group thereof. Glucuronic acid and N-acetaminogalactose are interconnected via ?(1-3) and ?(1-4) glucosidic bonds to form a backbone of a disaccharide repeating structural unit, and a fucose group is connected to the backbone as a side chain. On a molar ratio basis, the ratio of the glucuronic acid group:the N-acetaminogalactose group:the fucose group is 1:(0.8-1.2):(0.6-1.2). In the structure of the low-molecular-weight holothurian glycosaminoglycan, 10-30% of glucuronic acid groups are modified, on the 2-position, with a sulfate ester group, and the rest are hydroxyl groups; and a proportion of 10-30% of fucose groups is modified, on the 2-position, with an acetyl ester group, and the rest are hydroxyl or sulfate ester groups.
    Type: Application
    Filed: November 19, 2019
    Publication date: October 27, 2022
    Inventors: Yongsheng Jin, Xiujuan Ding, Wu Chen, Xiaoming Li, Junting Sun, Yihao Zhu, Xiaohua Lu, Caijuan Jin, Hua Zhou, Ningxia Wang, Yongbao Li, Qiaoyun Zhou, Jiangen Qian, Xi Chong, Yiming Yao, Yi Jiang
  • Publication number: 20220338173
    Abstract: A transmission method and a transmission device are provided. The transmission method for a first node or a third node includes obtaining information of a fifth time-frequency resource, and performing at least one of the following operations on the fifth time-frequency resource: indicating or configuring whether a second node performs transmission on the fifth time-frequency resource, the second node being a next-hop node of the first node; indicating that the fifth time-frequency resource is to be used by the first node or the second node for transmission; not expecting the second node to perform the transmission on the fifth time-frequency resource; not scheduling the second node to perform the transmission on the fifth time-frequency resource; or not configuring the second node to perform the transmission on the fifth time-frequency resource.
    Type: Application
    Filed: September 11, 2020
    Publication date: October 20, 2022
    Inventors: Yi ZHENG, Jing DONG, Jingwen ZHANG, Jing JIN, Qixing WANG, Guangyi LIU
  • Patent number: 11472949
    Abstract: Provided is an ethylene/1-butene copolymer having excellent processability and stress cracking resistance. The ethylene/1-butene copolymer according to the present invention may be applied to a high-pressure resistant heating pipe, a PE-RT pipe, a large diameter pipe, etc.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: October 18, 2022
    Inventors: Joongsoo Kim, Hyuck Ju Kwon, Yi Young Choi, Ki Soo Lee, Jongsang Park, Daesik Hong, Ye Jin Lee, Jinyoung Kwak
  • Publication number: 20220328673
    Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer includes a compound which includes a first group III element and is devoid of a second group III element. The buffer layer includes a III-V compound which includes the first and second group III elements. The buffer layer has a variable concentration of the second group III element that incrementally increases and then decrementally decreases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.
    Type: Application
    Filed: July 26, 2021
    Publication date: October 13, 2022
    Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
  • Publication number: 20220328674
    Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer includes a compound which includes a first group III element and is devoid of a second group III element. The buffer layer includes a III-V compound which includes the first and second group III elements. The buffer layer has an element ratio of the first group III element to the second group III element that decrementally decreases and then incrementally increases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.
    Type: Application
    Filed: July 26, 2021
    Publication date: October 13, 2022
    Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
  • Publication number: 20220328675
    Abstract: A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. A first oscillation rate between a first reference point and a second reference point within the buffer layer is greater than a second oscillation rate between the second reference point and a third reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.
    Type: Application
    Filed: July 20, 2021
    Publication date: October 13, 2022
    Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
  • Publication number: 20220328678
    Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer is disposed on the substrate. The buffer layer includes a III-V compound which includes a first element. The buffer layer is disposed on the nucleation layer. The buffer layer has a variable concentration of the first element that decrementally decreases and then incrementally increases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.
    Type: Application
    Filed: July 26, 2021
    Publication date: October 13, 2022
    Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
  • Publication number: 20220328425
    Abstract: A semiconductor device includes a nucleation layer, a first buffer layer, a first nitride-based semiconductor layer, and a second buffer layer. The nucleation layer includes a compound which includes a first element. The first buffer layer includes a III-V compound which includes the first element. A concentration of the first element varies with respect to a first reference point within the first buffer layer. The first nitride-based semiconductor layer is disposed on the first buffer layer. The second buffer layer includes a III-V compound which includes a second element different than the first element. The second buffer layer is disposed on and forms an interface with the first nitride-based semiconductor layer. A concentration of the second element varies to cyclically oscillate as a function of a distance within a thickness of the second buffer layer, which occurs with respect to a second reference point within the second buffer layer.
    Type: Application
    Filed: July 26, 2021
    Publication date: October 13, 2022
    Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
  • Publication number: 20220328424
    Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer includes a compound which includes a first group III element and is devoid of a second group III element. The buffer layer includes a III-V compound which includes the first and second group III elements. The buffer layer has an element ratio of the first group III element to the second group III element that incrementally increases and then decrementally decreases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.
    Type: Application
    Filed: July 26, 2021
    Publication date: October 13, 2022
    Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
  • Publication number: 20220328672
    Abstract: A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer is disposed on and forms an interface with the nucleation layer. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. Spacings among adjacent peaks of the oscillating function change from narrow to wide with respect to a first reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.
    Type: Application
    Filed: July 20, 2021
    Publication date: October 13, 2022
    Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
  • Publication number: 20220328676
    Abstract: A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. A first oscillation rate between a first reference point and a second reference point within the buffer layer is less than a second oscillation rate between the second reference point and a third reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.
    Type: Application
    Filed: July 20, 2021
    Publication date: October 13, 2022
    Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN
  • Publication number: 20220328679
    Abstract: A semiconductor device includes a substrate, a nucleation layer, a buffer layer, first and second nitride-based semiconductor layers, a pair of S/D electrodes, and a gate electrode. The nucleation layer is disposed on the substrate. The buffer layer includes a III-V compound which includes a first element. The buffer layer is disposed on the nucleation layer. The buffer layer has a variable concentration of the first element that decrementally decreases and then incrementally increases as a function of a distance within a thickness of the buffer layer. The first nitride-based semiconductor layer is disposed on the buffer layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.
    Type: Application
    Filed: July 26, 2021
    Publication date: October 13, 2022
    Inventors: Yi-Lun CHOU, Kye Jin LEE, Han-Chin CHIU, Xiuhua PAN