Abstract: Methods of synthesizing oligonucleotides via new intermediates on a cleavable support having an azidomethyl moiety are disclosed. The method comprises multiple reaction cycles, each of which comprises sequential coupling a nucleoside or oligonucleotide subunit on a cleavable support having an azidomethyl moiety and a nucleoside phosphoramidite or an oligonucleotide phosphoramidite, capping, oxidation/thiolation and deblocking; followed by orthogonal cleavage of the azidomethyl support while keeping all other protecting groups intact. The method can be used in combination with a support moiety for either solid phase or liquid phase oligo synthesis. The soluble support facilitates homogeneous reactions and efficient separations by simple precipitation. The methods also provide novel intermediates useful in the synthesis of oligonucleotide conjugates.

Abstract: The invention relates to a composition for use in regulating the autonomic nervous system.

Abstract: A multi-hardware energy-consumption-oriented channel pruning method and a related product. The method includes: ranking importance of a filter in a to-be-pruned convolutional neural network (CNN) model by using a feature distribution discrepancy (FDD) evaluation model based on a feature distribution of an original network model, and deleting a filter with a lowest importance ranking to generate a candidate first pruning model; determining an energy consumption of the candidate first pruning model by using an energy consumption estimation model based on actual measured data; performing trade-off processing on importance of a filter in the candidate first pruning model and the energy consumption of the candidate first pruning model by using a multi-objective evolutionary solving model, and obtaining a pruning scheme corresponding to each hardware device; and pruning the to-be-pruned CNN model by using the pruning scheme, and obtaining a second pruning model corresponding to each hardware device.

Abstract: The invention provides a method of assessing the appropriate therapeutic dose of 1-{4-[1-(4-cyclohexyl-3-trifluoromethyl-benzyloxyimino)-ethyl]-2-ethyl-benzyl}-azetidine-3-carboxylic acid to administer to a patient in need thereof, comprising the steps of: (i) testing whether or not the patient has the poor metabolizer genotype; and (ii) if the patient does not have the poor metaboliser genotype, administering 1-{4-[1-(4-cyclohexyl-3-trifluoromethyl-benzyloxyimino)-ethyl]-2-ethyl-benzyl}-azetidine-3-carboxylic acid, or a pharmaceutically acceptable salt thereof, to the patient at the standard therapeutic dose; and (iii) if the patient does have the poor metaboliser genotype, either (a) administering 1-{4-[1-(4-cyclohexyl-3-trifluoromethyl-benzyloxyimino)-ethyl]-2-ethyl-benzyl}-azetidine-3-carboxylic acid, or a pharmaceutically acceptable salt thereof, to the patient at a therapeutic dose below that of the standard therapeutic dose; or (b) not administering 1-{4-[1-(4-cyclohexyl-3-trifluoromethyl-benzyloxy

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A first layer of silicon-and-germanium-containing material, a second layer of silicon-and-germanium-containing material, and a layer of silicon-containing material may be disposed on the substrate. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting may oxidize at least a portion of the second layer of silicon-and-germanium-containing material. The methods may include providing a first etchant precursor to the processing region and contacting the substrate with the first etchant precursor. The contacting may selectively etch the first layer of silicon-and-germanium-containing material. The methods may include providing a second etchant precursor to the processing region.

Abstract: Described are methods and a device for determining a valid intrinsic alpha frequency. Described herein are methods and a device for determining the appropriate intrinsic alpha frequency (IAF) to be applied for neuro-EEG synchronization therapy using alternating magnetic fields to gently “tune” the brain and affect the mood, focus and cognition of subjects. Methods and a device described herein use an algorithm to quantitatively analyze EEG recordings to determine if recorded EEG frequencies are valid, and if necessary, requiring additional recordings and analysis until a valid EEG is found. Methods and devices described herein can be utilized to calculate the intrinsic frequency of other EEG bands, including the Theta, Beta Gamma and Delta bands.

Abstract: A method, performed by an electronic device, for suggesting meal plans, comprises, obtaining diet information of a user; forming a first subset of meal plans from a predetermined meal plan set according to the diet information; generating a second subset of meal plans from the first subset of meal plans via an evolution algorithm; calculating a score for each meal plan in the second subset of meal plans; ranking meal plans in the second subset of meal plans, wherein the score for each meal plan is calculated based on the diet information and one or more elements comprised in each meal plan.

Abstract: A semiconductor structure and a fabrication method of the semiconductor structure are provided. The semiconductor structure includes a substrate including a first region and a second region, first gate structures, second gate structures, first source-drain doped layers, second source-drain doped layers, and a first dielectric layer. A top surface of the first dielectric layer disposed over the first region is lower than a top surface of the first dielectric layer disposed over the second region. The semiconductor structure also includes a first barrier layer disposed over the first dielectric layer disposed over the first region. The first barrier layer and the first dielectric layer disposed over the first region include a first opening exposing the first source-drain doped layer, and the first dielectric layer disposed over the second region includes a second opening exposing the second source-drain doped layer.

Abstract: A computer-implemented method of analyzing excreta, comprising: obtaining visual information of excreta, providing the visual information to an artificial intelligence (AI) model; processing the visual information using the AI model to determine a plurality of scales of the excreta; outputting the plurality of scales of the excreta, receiving at least one input to adjust the plurality of scales of the excreta, and providing suggestion based on the adjusted plurality of scales of the excreta.

Abstract: An H-bridge type parallel multi-level inverter switch module, a method for optimizing the same, and an inverter using the same are provided. The switch module includes two switching units and an H-bridge inductor; each switching unit includes a first power device and a second power device connected in series, where the source of the first power device is connected to the drain of the second power device and this connection is used as the neutral point of the switching unit; the drains of the first power devices of the two switching units are connected to each other, and the sources of the second power devices of the two switching units are connected to each other; two ends of the H-bridge inductor are connected to the neutral points of the two switching units respectively.

Abstract: A gas supply system includes a loading/unloading stage including a cradle loader where a cradle loaded with a gas container is loaded, a test buffer chamber is configured to test the gas container, and a loading/unloading robot configured to transfer the gas container between the cradle and the test buffer chamber. A gas supply stage includes a storage queue configured to temporarily store the gas container, a gas supply cabinet where the gas container is mounted, and a transfer robot configured to transfer the gas container between the test buffer chamber and the storage queue and between the storage queue and the gas supply cabinet.

Abstract: A gas supply system includes a loading/unloading stage including a cradle loader where a cradle loaded with a gas container is loaded, a test buffer chamber is configured to test the gas container, and a loading/unloading robot configured to transfer the gas container between the cradle and the test buffer chamber. A gas supply stage includes a storage queue configured to temporarily store the gas container, a gas supply cabinet where the gas container is mounted, and a transfer robot configured to transfer the gas container between the test buffer chamber and the storage queue and between the storage queue and the gas supply cabinet.

Abstract: A gas supply system includes a loading/unloading stage including a cradle loader where a cradle loaded with a gas container is loaded, a test buffer chamber is configured to test the gas container, and a loading/unloading robot configured to transfer the gas container between the cradle and the test buffer chamber. A gas supply stage includes a storage queue configured to temporarily store the gas container, a gas supply cabinet where the gas container is mounted, and a transfer robot configured to transfer the gas container between the test buffer chamber and the storage queue and between the storage queue and the gas supply cabinet.

Abstract: A gas supply system includes a loading/unloading stage including a cradle loader where a cradle loaded with a gas container is loaded, a test buffer chamber is configured to test the gas container, and a loading/unloading robot configured to transfer the gas container between the cradle and the test buffer chamber. A gas supply stage includes a storage queue configured to temporarily store the gas container, a gas supply cabinet where the gas container is mounted, and a transfer robot configured to transfer the gas container between the test buffer chamber and the storage queue and between the storage queue and the gas supply cabinet.

Abstract: The present disclosure provides a composition. The composition contains (A) an ethylene/?-olefin copolymer containing (i) ethylene and (ii) from 20 wt % to 35 wt % C6-C8 ?-olefin comonomer, the ethylene/?-olefin copolymer having a density from 0.880 g/cc to 0.895 g/cc, a melt viscosity, at 177° C., from 4,000 mPa·s to 20,000 mPa·s, and a glass transition temperature from ?55° C. to ?20° C.; (B) a tackifier, and (C) a wax.

Abstract: Exemplary methods and systems of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. Methods may include forming a low quality oxide within one or more of the recesses, where the low quality oxide and a silicon-containing material each contain an exposed surface. Methods include contacting the low quality oxide and the high quality semiconductor material with a passivating agent selective to a surface defect of the low quality oxide. Methods include contacting the substrate with an etching agent and/or a cleaning agent, where the contacting with the cleaning agent removes the high quality semiconductor material at an equal or faster rate than the low quality oxide.

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A first layer of silicon-and-germanium-containing material, a second layer of silicon-and-germanium-containing material, and a layer of silicon-containing material may be disposed on the substrate. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting may oxidize at least a portion of the second layer of silicon-and-germanium-containing material. The methods may include providing a first etchant precursor to the processing region and contacting the substrate with the first etchant precursor. The contacting may selectively etch the first layer of silicon-and-germanium-containing material. The methods may include providing a second etchant precursor to the processing region.

Abstract: A composition comprising the following components: A) propylene/ethylene copolymer that has a density ?0.880 g/cc, and a MWD(conv) from 2.00 to 3.00 and a melt viscosity (177 C)?80,000 mPa*s; B) olefin multi-block copolymer that has a density ?0.890 g/cc and a melt index (I2)?0.5 g/10 min.