Abstract: A method is provided. The method includes: receiving a semiconductor structure having a first material and a second material; performing a first etch on the first material for a first duration under a first etching chemistry; and performing a second etch on the second material for a second duration under a second etching chemistry, wherein the first material includes a first incubation time and the second material includes a second incubation time greater than the first incubation time under the first etching chemistry. The first material includes a third incubation time and the second material includes a fourth incubation time less than the third incubation time under the second etching chemistry.

Abstract: A method includes forming a fin extending from a substrate; depositing a liner over a top surface and sidewalls of the fin, where the minimum thickness of the liner is dependent on selected according to a first germanium concentration of the fin; forming a shallow trench isolation (STI) region adjacent the fin; removing a first portion of the liner on sidewalls of the fin, the first portion of the liner being above a topmost surface of the STI region; and forming a gate stack on sidewalls and a top surface of the fin, where the gate stack is in physical contact with the liner.

Abstract: An active single-ended transmission cable is disclosed. The active single-ended transmission cable allows connection between a first and a second electronic device and comprises a first port, a second port, and a transmission wire. The first or second port is used for receiving or transmitting a differential signal between the first and the second electronic devices, and for converting between a differential signal and a single-ended signal. The transmission wire is used for transmitting the single-ended signal. This allows the conversion between the received or transmitted differential signal at the first and second ports into the single-ended signal so as to allow the transmission of the single-ended signal within the transmission wire.

Abstract: A gel-state electrolyte is provided herein. The gel-state electrolyte includes a solvent base; and spherical inorganic nanoparticles dispersed in the solvent base, wherein the spherical inorganic nanoparticles are bonded to each other through an M-O-M structure, wherein M is Ti, Si, Al, Zr, V, Fe, Ni, Zn, or a combination thereof.

Abstract: A filter device includes one or more filter membranes, and a filter housing enclosing the one or more filter membranes. Each of the filter membranes includes a base membrane made of a ceramic material, and a plurality of through holes. The base membrane is coated with a coating material.

Abstract: A nebulization medicament delivery device is provided, which includes a mouthpiece opening; an airway; at least one first vent configured to introduce external air into the airway, wherein the mouthpiece opening is in communication with the at least one first vent through the airway; a nebulization module including a mesh and configured for nebulization; a first pressure sensor disposed inside the nebulization medicament delivery device and to be air-tightly isolated from the airway, and configured to detect external air pressure outside the nebulization medicament delivery device; a second pressure sensor disposed adjacent to the airway or within the airway, and configured to detect air pressure inside the airway; and a controller, which drives the nebulization module to perform nebulization based on air pressure difference between the external air pressure and the air pressure inside the airway.

Abstract: An artificial dressing, use of artificial dressing for promoting wound healing and method of manufacturing artificial dressing are disclosed. The artificial dressing comprises a gelatin, a polysorbate 20 and a glutaraldehyde for promoting wound healing. The manufacturing method of the artificial dressing comprises the steps of enabling the composition of the gelatin, the polysorbate 20 and the glutaraldehyde to perform a foaming step, a molding step and a freeing step in sequence. The artificial dressing has obvious pores and is capable of absorbing a liquid weight about 25-35 times of its body weight. After thermal disintegration experiments and adhesion tests, disintegration of the artificial dressing is not observed, and in animal experiments, compared with commercially available dressings, the artificial dressing of the invention is capable of accelerating wound healing when applied dryly; and capable of proliferating functional tissues of the wound when applied wetly.

Abstract: A package substrate is provided, in which a thinner second dielectric layer is formed on one side of a circuit structure including a first dielectric layer, so as to prevent large stress difference between two opposite sides of the circuit structure, thereby preventing the package substrate from warpage problems. A method of fabricating the package substrate is also provided.

Abstract: A substrate integrated waveguide having multiple substrate comprises a first substrate and a second substrate stacked with the first substrate, wherein metal layers are formed on opposite sides of the first substrate and opposite sides of the second substrate, a plurality of metal holes are formed between two metal layers of the same substrate to limit transmission paths of electromagnetic waves transmitted in the substrate, and areas having no metal therein are formed between the first and second substrates so that the electromagnetic waves could be transmitted between the first and second substrates thereby.

Abstract: A device includes a transistor. The transistor includes a plurality of stacked channels, a source/drain region coupled to the stacked channels, and a gate metal wrapped around the stacked channels. The transistor includes a plurality of inner spacers, each inner spacer being positioned laterally between the gate metal and the source/drain region and including a gap and an inner spacer liner layer between the gate metal and the source/drain region.

Abstract: A heat dissipation module includes a main vapor chamber, at least one auxiliary vapor chamber, a main heat dissipation fin set and at least one auxiliary heat dissipation fin set. The auxiliary vapor chamber is in fluid communication with the main vapor chamber, the main heat dissipation fin set is installed on the main vapor chamber, the auxiliary heat dissipation fin set is connected to the auxiliary vapor chamber, and the auxiliary vapor chamber is arranged between the main heat dissipation fin set and the auxiliary heat dissipation fin set.

Abstract: Various solutions for network power saving with respect to user equipment and network apparatus in mobile communications are described. An apparatus may receive a power saving indication. The apparatus may obtain power saving information according to the power saving indication. The power saving indication may comprise at least one of a discontinuous reception (DRX) switch indicator for switching between a user equipment (UE)-specific-DRX (U-DRX) and a group-specific-DRX (G-DRX), an energy saving mode (EMS) indication, a list of synchronization signal block (SSB) or channel state information-reference signal (CSI-RS) resources, and a set of transmission configuration indication (TCI)I states or RS resource indexes.

Abstract: A wafer map recognition method using artificial intelligence includes obtaining wafer maps of a plurality of wafers; performing an unsupervised algorithm on the wafer map of each wafer in the plurality of wafers to generate a feature data set for the corresponding wafer map; and performing a clustering algorithm according to a plurality of feature data sets for the plurality of wafer maps to find a wafer map with a potential defect.

Abstract: A printed circuit board comprising a differential microstrip pair including a neck-down area and an ultraviolet glue coating a portion of the neck-down area of the differential microstrip pair to control an impedance of the differential microstrip pair.

Abstract: In an embodiment, a device includes: lower semiconductor nanostructures including a first semiconductor material; a lower epitaxial source/drain region adjacent the lower semiconductor nanostructures, the lower epitaxial source/drain region having a first conductivity type; upper semiconductor nanostructures including a second semiconductor material, the second semiconductor material different from the first semiconductor material; and an upper epitaxial source/drain region adjacent the upper semiconductor nanostructures, the upper epitaxial source/drain region having a second conductivity type, the second conductivity type being opposite the first conductivity type.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a first vertical structure and a second vertical structure formed over the substrate, and a conductive rail structure between the first and second vertical structures. A top surface of the conductive rail structure can be substantially coplanar with top surfaces of the first and the second vertical structures.

Abstract: Provided are a system for treating wastewater and a cleaning method thereof. The wastewater treatment system includes: a wastewater compartment, a first electrode, a second electrode, an acid compartment, a base compartment, an acid supply apparatus, a base supply apparatus, a control apparatus, and a power supply device. During the cleaning process, the power supply device provides reverse potential to the first and the second electrodes. The control apparatus shut off a first channel so that the acid supply apparatus provides an acid solution to the base compartment through a second channel, and shut off a third channel so that the base supply apparatus provides an alkaline solution to the acid compartment through a fourth channel, without shutting off the wastewater treatment system.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a gate stack over the first fin and the second fin. The method includes forming a first spacer over gate sidewalls of the gate stack and a second spacer adjacent to the second fin. The method includes partially removing the first fin and the second fin. The method includes forming a first source/drain structure and a second source/drain structure in the first trench and the second trench respectively. A first ratio of a first height of the first merged portion to a second height of a first top surface of the first source/drain structure is greater than or equal to about 0.5.

Abstract: A flexible flat coaxial ribbon cable, equipped with a plurality of coaxial cables arranged side by side to reduce the degree of interference and loss during transmitting RF signals or high-speed signals through the coaxial cables, thereby effectively increasing the transmission distance for RF signals or high-speed signals. Additionally, the coaxial cables used in the flexible flat coaxial ribbon cable of this application omits an outer insulation layer, allowing the thickness of the flexible flat coaxial ribbon cable to be effectively reduced for use in spaces with height constraints.

Abstract: Methods, systems, and devices for data management are described. A wallet application may display one or more messages sent via a messaging service from a second user at a first user interface associated with a first user. The first user interface may receive one or more inputs to initiate a process for sending a crypto token to the second blockchain address of the second user. The wallet application may broadcast a message configured to transfer the crypto token from the first blockchain address to the second blockchain address via a blockchain network associated with the crypto token. The wallet application may update the first user interface to indicate the broadcasted message via the blockchain network. As such, users of the wallet application may transfer crypto tokens from a blockchain address via a blockchain network while, in a same user interface, sending and receiving messages via a messaging service.