Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

Abstract: A board end connector includes a cage. The cage surrounds a accommodating space. The cage has at least one elastic bridge and at least one alignment hole. The elastic bridge is located on a surface of the cage and recessed toward the accommodating space. When the elastic bridge is abutted against an external component, the elastic bridge is elastically deformed and applies a reverse force to the external component, thereby changing the position of a portion of the external component in the alignment hole.

Abstract: An assembling method for an optical system is provided, including: providing a first movable portion, connecting the first movable portion to a first fixed portion, providing a second movable portion, connecting the second movable portion to a second fixed portion, engaging the first fixed portion to the second fixed portion, adjusting the position of the first movable portion relative to the first fixed portion to a first predetermined position and temporarily affixing the first movable portion in the first predetermined position, affixing a first optical member to the first movable portion, and affixing a second optical member to the second movable portion.

Abstract: A video coder may determine a motion vector of a non-adjacent block of a current picture of the video data. The non-adjacent block is non-adjacent to a current block of the current picture. Furthermore, the video coder determines, based on the motion vector of the non-adjacent block, a motion vector predictor (MVP) for the current block. The video coder may determine a motion vector of the current block. The video coder may also determine a predictive block based on the motion vector of the current block.

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

Abstract: Disclosed is a data processing device including a main SoC, a performance-enhancing SoC, and an external circuit that is set outside any of the two SoCs. The main SoC includes: a first central processing unit (CPU) dividing to-be-processed data into a first input part and a second input part, and processing the first input part to generate first output data; and a first transceiver circuit forwarding the second input part to the performance-enhancing SoC via the external circuit, and then receiving second output data via the external circuit and forwarding it. The performance-enhancing SoC includes: a second transceiver circuit receiving the second input part via the external circuit, and transmitting the second output data to the main SoC via the external circuit; and a second CPU receiving the second input part from the second transceiver circuit and processing it to provide the second output data for the second transceiver circuit.

Abstract: A display device and a bezel thereof are provided. The display device includes a display panel and a bezel. The display panel has a first surface and a second surface. The first surface includes at least one pixel pad section, and the second surface includes at least one circuit pad section. The bezel includes a first surface connecting portion, a second surface connecting portion and at least one conductive wire. The edge of the display panel having the pixel pad section and the circuit pad section is accommodated between the first surface connecting portion and the second surface connecting portion. Each conductive wire has a first end and a second end. The first end is disposed on the first surface connecting portion and the second end is disposed on the second surface connecting portion. The part of the first connecting portion having the first end corresponds to the pixel pad section, and the part of the second connecting portion having the second end corresponds to the circuit pad section.

Abstract: A semiconductor device includes a first semiconductor die and a second semiconductor die connected to the first semiconductor die. Each of the first semiconductor die and the second semiconductor die includes a substrate, a conductive bump formed on the substrate and a conductive contact formed on the conductive bump. The conductive contact has an outer lateral sidewall, there is an inner acute angle included between the outer lateral sidewall and the substrate is smaller than 85°, and the conductive contact of the first semiconductor die is connected opposite to the conductive contact of the second semiconductor die.

Abstract: In an embodiment, a device bonding apparatus is provided. The device bonding apparatus includes a first process station configured to receive a wafer; a first bond head configured to carry a die to the wafer, wherein the first bonding head includes a first rigid body and a vacuum channel in the first rigid body for providing an attaching force for carrying the die to the wafer; and a second bond head configured to press the die against the wafer, the second bond head including a second rigid body and an elastic head disposed over the second rigid body for pressing the die, the elastic head having a center portion and an edge portion surrounding the center portion, the center portion of the elastic head having a first thickness, the edge portion of the elastic head having a second thickness, the second thickness being greater than the second thickness.

Abstract: A method for forming a semiconductor device is provided. The method includes providing a wafer with multiple semiconductor dies on the adhesive film held by the frame element. The method also includes lifting a semiconductor die up from the wafer using an ejector element. The method includes picking up the semiconductor die with a collector element. The method further includes flip-chipping the semiconductor die with the collector element, and picking up the semiconductor die from the collector element using a bond-head element. In addition, the method includes measuring the warpage of the semiconductor die on the bond-head element using a sensor, then bonding the semiconductor die to a carrier using the bond-head element.

Abstract: Integrated circuit package structures and methods of forming integrated circuit package structures are discussed. An integrated circuit package structure, in accordance with some embodiments, includes an integrated circuit package substrate with a heterogeneous bonding scheme that includes conductive pillars for bonding semiconductor devices to as well as a region including conductive connectors embedded in a dielectric for bonding additional semiconductor devices.

Abstract: A display device includes a multiple of light-emitting elements and a multiple of driving circuits. Each of the multiple of driving circuits is configured to generate a driving current flowing through one of the multiple of light-emitting elements. Each of the multiple of driving circuits includes a first transistor, a second transistor, a reset circuit, a first control circuit and a second control circuit. The driving current flows from a first system high voltage terminal through the first transistor, the second transistor and one of the multiple of light-emitting elements to a system low voltage terminal. The first control circuit is configured to control the first transistor to modulate pulse amplitude of the driving current. The second control circuit is configured to control the second transistor to modulate pulse width of the driving current.

Abstract: A package structure includes an optical die, an optical die, a supporting structure, and a lens structure. The optical die includes a photonic region. The optical die is disposed on and electrically coupled to the optical die. The supporting structure is disposed on the optical die, where the electric die is disposed between the supporting structure and the optical die. The lens structure is disposed on the supporting structure and optically coupled to the photonic region of the optical die, where the supporting structure is disposed between the lens structure and the electric die.

Abstract: A flip-chip bonding method includes following operations. A wafer is provided with multiple semiconductor dies on an adhesive film held by a frame element. A semiconductor die is lifted up from the wafer by an ejector element. The semiconductor die is picked up with a collector element. The semiconductor die is flip-chipped with the collector element. An alignment check is performed to determine a position of the semiconductor die, so as to determine a process tolerance between a center of the collector element and a center of the semiconductor die. The semiconductor die with the collector element is transferred to a location underneath a bonder element based on the process tolerance of the alignment check. The semiconductor die is picked up from the collector element by the bonder element. The semiconductor die is bonded to a carrier by the bonder element.

Abstract: A display device includes a multiple of light-emitting elements and a multiple of driving circuits. Each of the multiple of driving circuits is configured to generate a driving current to illuminate one of the multiple of light-emitting elements. Each of the multiple of driving circuits includes a first transistor, a second transistor, a reset circuit, a first control circuit and a second control circuit. The driving current flows from a first system high voltage terminal through the first transistor, the second transistor and one of the multiple of light-emitting elements to a system low voltage terminal. The first control circuit is configured to control the first transistor to modulate pulse amplitude of the driving current. The second control circuit is configured to control the second transistor to modulate pulse width of the driving current.

Abstract: A semiconductor package includes a first integrated circuit, a plurality of first through vias and a plurality of fin-shaped through vias. The first through vias surround the first integrated circuit. The fin-shaped through vias are physically connected to the first through vias respectively, wherein the first through vias are disposed between the first integrated circuit and the fin-shaped through vias.

Abstract: A pixel driving device includes at least one data line and at least one driver integrated circuit. The at least one data line includes a first area and a second area on both sides. The first area and the second area are separated by the at least one data line. The at least one driver integrated circuit includes a first circuit and a second circuit. The first circuit is disposed in the first area, is configured to receive at least one first high-frequency signal so as to at least one first driving signal. The second circuit is disposed in the second area, is coupled to the first circuit and is configured to receive at least one low-frequency signal.

Abstract: A display device includes a substrate and pixels. The substrate has an intermediate region and a peripheral region. Each of the pixels includes sub-pixels. Each of the sub-pixels includes a pad group and a light emitting diode (LED) element. The pad group has a first pad and a second pad. The LED element is electrically connected to the first pad and the second pad. The pixels include standard pixels disposed in the intermediate region and peripheral pixels disposed in the peripheral region. The first pads and the second pads of the pad groups of the sub-pixels of each of the standard pixels are arranged in a first direction. The peripheral pixels include a first peripheral pixel. The first pads and the second pads of the pad groups of the sub-pixels of the first peripheral pixel are arranged in a second direction, and the first direction crosses over the second direction.

Abstract: A driving circuit includes a light-emitting element, a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor and a regulator circuit. The first transistor, the second transistor and the light-emitting element are coupled in series between a first system voltage terminal and a second system voltage terminal. A first terminal of the first transistor is coupled to the first system voltage terminal. The third transistor is electrically coupled between a gate terminal and a second terminal of the first transistor. The fourth transistor is electrically coupled between the gate terminal of the first transistor and the second system voltage terminal. A first terminal of the first capacitor is electrically coupled to the gate terminal of the first transistor. A regulator circuit is electrically coupled to a second terminal of the first capacitor.

Abstract: A display apparatus includes a substrate and pixels disposed on the substrate. Each of the pixels includes sub-pixels. The substrate has an intermediate region and a peripheral region, where the peripheral region is located between an edge of the substrate and the intermediate region. The pixels include standard pixels disposed in the intermediate region and peripheral pixels disposed in the peripheral region. A color displayed by a sub-pixel of a standard pixel and a color displayed by a sub-pixel of a peripheral pixel are the same, and a distance between a second transistor of the sub-pixel of the standard pixel and a pad of the sub-pixel of the standard pixel is not equal to a distance between a second transistor of the sub-pixel of the peripheral pixel and a pad of the sub-pixel of the peripheral pixel.