Abstract: A photomask includes a plurality of main patterns, a plurality of first sub-resolution assist feature patterns and a plurality of second sub-resolution assist feature patterns. The first sub-resolution assist feature patterns are located aside the main patterns. The second sub-resolution assist feature patterns are disposed between and connected to adjacent two of the first sub-resolution assist feature patterns.

Abstract: A photomask includes a plurality of main patterns, a plurality of first sub-resolution assist feature patterns and a plurality of second sub-resolution assist feature patterns. The first sub-resolution assist feature patterns are located aside the main patterns. The second sub-resolution assist feature patterns are disposed between and connected to adjacent two of the first sub-resolution assist feature patterns.

Abstract: A photomask includes a plurality of main patterns, a plurality of first sub-resolution assist feature patterns and a plurality of second sub-resolution assist feature patterns. The first sub-resolution assist feature patterns are located aside the main patterns. The second sub-resolution assist feature patterns are disposed between and connected to adjacent two of the first sub-resolution assist feature patterns.

Abstract: A phase shift mask suitable for forming a via pattern on a transferred object is provided. The phase shift mask has a first pattern region and a second pattern region. The phase shift mask includes a substrate and a phase shift pattern layer. The phase shift pattern layer is located on the substrate and is disposed corresponding to one of the first pattern region and the second pattern region. An optical phase difference corresponding to the first pattern region and the second pattern region is basically 180 degrees. The first pattern region has a via region away from the second pattern region. The second pattern region includes a plurality of strip patterns surrounding the via region.

Abstract: A phase shift mask suitable for forming a via pattern on a transferred object is provided. The phase shift mask has a first pattern region and a second pattern region. The phase shift mask includes a substrate and a phase shift pattern layer. The phase shift pattern layer is located on the substrate and is disposed corresponding to one of the first pattern region and the second pattern region. An optical phase difference corresponding to the first pattern region and the second pattern region is basically 180 degrees. The first pattern region has a via region away from the second pattern region. The second pattern region includes a plurality of strip patterns surrounding the via region.

Abstract: A phase shift mask for transferring a layout in a photolithography process includes a substrate and a patterned phase shift layer. The patterned phase shift layer is disposed on the substrate and includes at least one device pattern aperture and a plurality of dummy pattern apertures, the device pattern aperture and the dummy pattern apertures expose the surface of the substrate, and the dummy pattern apertures are disposed around the device pattern aperture. The patterned phase shift layer has a predetermined thickness such that the phase difference between the light passing through the patterned phase shift layer and the light passing through the device pattern aperture or the dummy pattern apertures during the photolithography process is 180 degrees. The transmittance ratio of the patterned phase shift layer is 100%.

Abstract: A photomask is provided. The photomask includes a substrate, a light-blocking main feature, and sub-resolution assist features (SRAFs). The light-blocking main feature is disposed on the substrate. The SRAFs are disposed on the substrate and located on at least one side of the light-blocking main feature. A space between two adjacent SRAFs of the SRAFs is equal to a width of each of the SRAFs, and a light transmittance of the SRAFs is 100%.

Abstract: A phase shift mask including a substrate, a phase shift layer and a transparent layer is provided. The phase shift layer is disposed on the substrate and has an opening. The transparent layer is disposed in the opening. The phase shift mask can have a large DOF window.