Patents by Inventor Yi-Kai TSENG

Yi-Kai TSENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having NFET structure and method of fabricating the same
    Patent number: 9831343
    Abstract: A semiconductor device having n-type field-effect-transistor (NFET) structure and a method of fabricating the same are provided. The NFET structure of the semiconductor device includes a silicon substrate, at least one source/drain portion and a cap layer. The source/drain portion can be disposed within the silicon substrate, and the source/drain portion comprises at least one n-type dopant-containing portion. The cap layer overlies and covers the source/drain portion, and the cap layer includes silicon carbide (SiC) or silicon germanium (SiGe) with relatively low germanium concentration, thereby preventing n-type dopants in the at least one n-type dopant-containing portion of the source/drain portion from being degraded after sequent thermal and cleaning processes.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: November 28, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chii-Horng Li, Chien-I Kuo, Lilly Su, Chien-Chang Su, Yi-Kai Tseng, Ying-Wei Li
  • SEMICONDUCTOR DEVICE HAVING NFET STRUCTURE AND METHOD OF FABRICATING THE SAME
    Publication number: 20170194495
    Abstract: A semiconductor device having n-type field-effect-transistor (NFET) structure and a method of fabricating the same are provided. The NFET structure of the semiconductor device includes a silicon substrate, at least one source/drain portion and a cap layer. The source/drain portion can be disposed within the silicon substrate, and the source/drain portion comprises at least one n-type dopant-containing portion. The cap layer overlies and covers the source/drain portion, and the cap layer includes silicon carbide (SiC) or silicon germanium (SiGe) with relatively low germanium concentration, thereby preventing n-type dopants in the at least one n-type dopant-containing portion of the source/drain portion from being degraded after sequent thermal and cleaning processes.
    Type: Application
    Filed: December 30, 2015
    Publication date: July 6, 2017
    Inventors: Chii-Horng Ll, Chien-l KUO, Lilly SU, Chien-Chang SU, Yi-Kai TSENG, Ying-Wei LI