Abstract: The present disclosure relates to a power grid system and method of managing the same. According to the present invention, a power grid system is provided. The power grid system is adapted to supply electric power to at least one load unit, and the power grid system comprises a bus, a switching module, and an energy storage system coupled to the bus. The at least one load unit is coupled to the bus. The switching module comprises a switching device. The switching device is connected between the bus and a main grid. The energy storage system is configured to operate in a current source mode and a voltage source mode, and it is configured to receive a tripped signal from the switching module. The energy storage system is configured to switch to the voltage source mode when the energy storage system receives the tripped signal.

Abstract: A semiconductor device having n-type field-effect-transistor (NFET) structure and a method of fabricating the same are provided. The NFET structure of the semiconductor device includes a silicon substrate, at least one source/drain portion and a cap layer. The source/drain portion can be disposed within the silicon substrate, and the source/drain portion comprises at least one n-type dopant-containing portion. The cap layer overlies and covers the source/drain portion, and the cap layer includes silicon carbide (SiC) or silicon germanium (SiGe) with relatively low germanium concentration, thereby preventing n-type dopants in the at least one n-type dopant-containing portion of the source/drain portion from being degraded after sequent thermal and cleaning processes.

Abstract: A semiconductor device having n-type field-effect-transistor (NFET) structure and a method of fabricating the same are provided. The NFET structure of the semiconductor device includes a silicon substrate, at least one source/drain portion and a cap layer. The source/drain portion can be disposed within the silicon substrate, and the source/drain portion comprises at least one n-type dopant-containing portion. The cap layer overlies and covers the source/drain portion, and the cap layer includes silicon carbide (SiC) or silicon germanium (SiGe) with relatively low germanium concentration, thereby preventing n-type dopants in the at least one n-type dopant-containing portion of the source/drain portion from being degraded after sequent thermal and cleaning processes.