Patents by Inventor Yi-Ko CHEN

Yi-Ko CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Feature patterning using pitch relaxation and directional end-pushing with ion bombardment
    Patent number: 12315737
    Abstract: A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to form a cut pattern including first and second cut features exposing portions of the respective first and second line features. In a top view, at least one of the first and second cut features is asymmetrically arranged with respect to a central axis of a corresponding first or second line feature. At least one angled ion implantation is performed to enlarge the first and second cut features in at least one direction perpendicular to the first direction. The portions of the first and second line features exposed by the respective first and second cut features are then removed.
    Type: Grant
    Filed: May 30, 2023
    Date of Patent: May 27, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzung-Hua Lin, Yi-Ko Chen, Chia-Chu Liu, Hua-Tai Lin
  • FEATURE PATTERNING USING PITCH RELAXATION AND DIRECTIONAL END-PUSHING WITH ION BOMBARDMENT
    Publication number: 20230298901
    Abstract: A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to form a cut pattern including first and second cut features exposing portions of the respective first and second line features. In a top view, at least one of the first and second cut features is asymmetrically arranged with respect to a central axis of a corresponding first or second line feature. At least one angled ion implantation is performed to enlarge the first and second cut features in at least one direction perpendicular to the first direction. The portions of the first and second line features exposed by the respective first and second cut features are then removed.
    Type: Application
    Filed: May 30, 2023
    Publication date: September 21, 2023
    Inventors: Tzung-Hua LIN, Yi-Ko CHEN, Chia-Chu LIU, Hua-Tai LIN
  • Feature patterning using pitch relaxation and directional end-pushing with ion bombardment
    Patent number: 11688610
    Abstract: A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to form a cut pattern including first and second cut features exposing portions of the respective first and second line features. In a top view, at least one of the first and second cut features is asymmetrically arranged with respect to a central axis of a corresponding first or second line feature. At least one angled ion implantation is performed to enlarge the first and second cut features in at least one direction perpendicular to the first direction. The portions of the first and second line features exposed by the respective first and second cut features are then removed.
    Type: Grant
    Filed: March 3, 2021
    Date of Patent: June 27, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzung-Hua Lin, Yi-Ko Chen, Chia-Chu Liu, Hua-Tai Lin
  • FEATURE PATTERNING USING PITCH RELAXATION AND DIRECTIONAL END-PUSHING WITH ION BOMBARDMENT
    Publication number: 20220102162
    Abstract: A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to form a cut pattern including first and second cut features exposing portions of the respective first and second line features. In a top view, at least one of the first and second cut features is asymmetrically arranged with respect to a central axis of a corresponding first or second line feature. At least one angled ion implantation is performed to enlarge the first and second cut features in at least one direction perpendicular to the first direction. The portions of the first and second line features exposed by the respective first and second cut features are then removed.
    Type: Application
    Filed: March 3, 2021
    Publication date: March 31, 2022
    Inventors: Tzung-Hua LIN, Yi-Ko CHEN, Chia-Chu LIU, Hua-Tai LIN