Abstract: A shallow trench isolation (STI) structure for semiconductor devices is formed using a deposited silicon layer formed over a polish stop layer formed over an oxide formed on a substrate. The polish stop layer may be nitride. An opening is formed extending through the deposited silicon layer and the nitride and oxide layers and extending into the substrate. A deposited oxide is formed filling the opening and extending over the top surface of deposited silicon layer. A chemical mechanical polishing operation polishes the deposited silicon layer at a rate faster than the deposited oxide layer to produce an STI with a convex portion extending above the nitride layer. Dishing problems are avoided and the structure may be subsequently planarized.

Abstract: An improved hoop support for semiconductor wafers reduces contamination of the wafer during edge beveling operations through the use of support pins that make only line contact with the wafer. The support pins are spaced around the periphery of the hoop and possess a triangular cross section. Two intersecting sides of the pins form an edge that defines the line contact with the wafer. These intersecting sides are preferably inclined relative to the wafer at an angle of between 60 and 80 degrees.

Abstract: An apparatus and a method for removing coating layers from the top of alignment marks on a wafer are described. The apparatus includes a cleaning chamber that is a cavity and a lid member suspended in the cavity, a wafer chuck that is rotatably mounted in the lid member for holding a wafer in an upside down position such that the alignment marks are facing downwardly, and at least two solvent dispensing arms mounted in an outer peripheral area of the lid member that are immediately adjacent to the chuck for dispensing a flow of solvent upwardly toward the active surface of the wafer when the wafer is held in a stationary position, each of the at least two solvent dispensing arms are positioned corresponding to a position of one of the alignment marks.

Abstract: An improved hoop support for semiconductor wafers reduces contamination of the wafer during edge beveling operations through the use of support pins that make only line contact with the wafer. The support pins are spaced around the periphery of the hoop and possess a triangular cross section. Two intersecting sides of the pins form an edge that defines the line contact with the wafer. These intersecting sides are preferably inclined relative to the wafer at an angle of between 60 and 80 degrees.

Abstract: An apparatus and a method for removing coating layers from the top of alignment marks on a wafer are described. The apparatus includes a cleaning chamber that is a cavity and a lid member suspended in the cavity, a wafer chuck that is rotatably mounted in the lid member for holding a wafer in an upside down position such that the alignment marks are facing downwardly, and at least two solvent dispensing arms mounted in an outer peripheral area of the lid member that are immediately adjacent to the chuck for dispensing a flow of solvent upwardly toward the active surface of the wafer when the wafer is held in a stationary position, each of the at least two solvent dispensing arms are positioned corresponding to a position of one of the alignment marks.

Abstract: A method for fabricating diamond conditioning disc and the disc fabricated are described. In the method, a substrate for a diamond conditioning disc is first provided, a layer of a binder material such as an alloy of nickel is then coated on top of the diamond conditioning disc, a plurality of diamond particles is then implanted in a layer of binder material such that not more than ⅔ of a diameter, or of a height of the multiplicity of diamond particles is exposed above a top surface of the layer of the binder material. In a preferred embodiment, the multiplicity of diamond particles is implanted in a layer of binder material such that between about ½ and about ⅔ of a diameter, or of a height of the particles is exposed, or protruded above a top surface of the binder material layer.