Abstract: A computer-readable storage medium stores instructions to configure one or more processors of a Further Reduced Capacity (F-RedCap) UE for operation in a 5G NR network, and to cause the F-RedCap UE to perform operations including decoding a PBCH to obtain a numerology parameter. A maximum resource block (RB) allocation is determined for a bandwidth associated with the numerology parameter. The maximum RB allocation is adjusted based on a reduced bandwidth associated with the F-RedCap UE to obtain an adjusted RB allocation. A maximum data rate is determined based on the numerology parameter and the adjusted RB allocation. Data is encoded for an uplink (UE) transmission to a base station. The UE transmission uses the maximum data rate.

Abstract: A three-level power factor rectifier includes a diode bridge arm, a bridge arm assembly, an input inductor, a capacitor bank, and a controller. The first bridge arm includes a first switch, a second switch, a third switch, and a fourth switch connected in series and in sequence. When the controller determines that a loading is less than a load threshold, the controller controls the three-level power factor rectifier entering a burst mode. In the burst sleep period, when a voltage value of an AC power source is greater than a first threshold, the first switch and the second switch are turned off; when the voltage value is less than a second threshold, the third switch and the fourth switch are turned on. When entering the burst period from the burst sleep period, the controller turns on the second switch and the third switch for a specific time period.

Abstract: An array substrate has a hole-opening region, a display region surrounding the hole-opening region, and a hole-peripheral region located between the hole-opening region and the display region. The array substrate includes a substrate and a driving circuit layer located on the substrate. The driving circuit layer includes a constant-voltage conductive ring and a plurality of signal lines. At least some of the plurality of signal lines are target signal lines. The target signal lines each include a lead portion and a winding portion connected thereto. The lead portion extends from the hole-peripheral region to the display region, and the winding portion is located in the hole-peripheral region and is disposed along an edge of the hole-opening region. The constant-voltage conductive ring is located in the hole-peripheral region and is disposed around the hole-opening region. The winding portion is located between the constant-voltage conductive ring and the hole-opening region.

Abstract: An electronic device including a substrate with a trench and an inductor disposed on the substrate is provided. The inductor includes a first conductive layer and a second conductive layer. The first conductive layer is conformally disposed on the substrate. At least a portion of the first conductive layer is disposed in the trench. The first conductive layer has a first end portion and a second end portion. The second conductive layer is conformally disposed on the first conductive layer. The second conductive layer has a first end portion and a second end portion on the first end portion of the first conductive layer and the second end portion of the first conductive layer, respectively. The first end portion of the second conductive layer is electrically connected with the second end portion of the first conductive layer.

Abstract: Provided are a crystal form and salt of a phenothiazine compound, a preparation method therefor and a use thereof. A hydrochloride of the phenothiazine compound and a crystal thereof can be used as ferroptosis inhibitors, and the hydrochloride and the crystal thereof have relatively good solubility, stability, oral absorption bioavailability, and druggability.

Abstract: An internal circulation type clathrate hydrate-based cold storage system and method are provided in the field of industrial refrigeration. The internal circulation type clathrate hydrate-based cold storage system includes a water chilling unit, a hydrate-based cold storage tank, a gas disturbance device, a concentration measurement system, a heat exchange system, a direct-current power supply and circuit control system, and a system monitoring device. The water chilling unit provides a secondary refrigerant at a low temperature. The secondary refrigerant flows through an evaporator coil in the hydrate-based cold storage tank for a heat exchange. The gas disturbance device induces hydrate nucleation. The concentration measurement system monitors a concentration of a hydrate solution in real time. The heat exchange system is equipped with a finned tube heat exchanger with a fan.

Abstract: Various aspects may provide a molding system. The molding system may include a molding unit which includes a first mold panel and a second mold panel. The first mold panel and the second mold panel may include a mold cavity which surrounds a semiconductor workpiece along a side surface of the semiconductor workpiece, with the first mold panel and the second mold panel engaged with the semiconductor workpiece. Various aspects may also provide a molding method which utilize the molding system.

Abstract: An electronic device may include a lenticular display. The lenticular display may have a lenticular lens film formed over an array of pixels. A plurality of lenticular lenses may extend across the length of the display. The lenticular lenses may be configured to enable stereoscopic viewing of the display such that a viewer perceives three-dimensional images. Crosstalk between viewing zones and disparity between images received from different viewing zones may result in disparity-caused shifts in images perceived by viewer of the lenticular display. To mitigate these disparity-caused shifts, compensation circuitry may be included in the display pipeline circuitry. The compensation circuitry may include stored disparity-caused shift calibration information that is used for the compensation. The stored disparity-caused shift calibration information may be a polynomial function that outputs a magnitude of disparity-caused shift for a given pixel location.

Abstract: Provided are an anti-Her-2 antibody-granulocyte regulatory factor fusion protein, a preparation method therefor and an application thereof. Specifically, this relates to a fusion protein, a single chain of the fusion protein comprising the following elements fused together: (a) a first protein element; (b) a second protein element; and (c) optionally, a joint element located between the first protein element and the second protein element. The first protein element is an antigen recognition module, for example, a protein element of an anti-Her-2 antibody or an active fragment thereof; the second protein element is a granulocyte colony stimulating factor. The present fusion protein has advantages in precise recognition, immunotherapy, controllable toxicity, and enhanced ADCC, and also has the synergistic effect of high-efficiency tumor cell killing activity, as well as low toxicity and side effects.

Abstract: Provided is an anti-B7-H4 antibody containing a VH, wherein the VH contains the following CDRs or a mutation thereof: CDR1 as shown in the amino acid sequence of SEQ ID NO: 4 or 5, CDR2 as shown in the amino acid sequence of SEQ ID NO: 15, and CDR3 as shown in the amino acid sequence of SEQ ID NO: 24 or 25, and wherein the mutation is an insertion, deletion or substitution of 3, 2 or 1 amino acid(s) in the amino acid sequences of the CDRs. The antibody has the activity of binding to human B7-H4 and cynomolgus monkey B7-H4. The antibody still retains the activity of binding to human B7-H4 and cynomolgus monkey B7-H4 when prepared into a B7-H4×CD3 bispecific antibody, and has a strong killing effect on tumor cells. The antibody induces a very low expression of nonspecific cytokines such as IL-6 and IFN-?, and exhibits a strong in vivo anti-tumor activity.

Abstract: Compounds having activity as inhibitors of G12C mutant KRAS protein are provided. The compounds have the following structure (I): or a pharmaceutically acceptable salt, stereoisomer, isotopic form or prodrug thereof, wherein R1, L1, L2, L3, A1, A2, A3, A4, G1, G2, E, W, X, Y, Z, m, and n are as defined herein. Methods associated with preparation and use of such compounds, pharmaceutical compositions comprising such compounds and methods to modulate the activity of G12C mutant KRAS protein for treatment of disorders, such as cancer, are also provided.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for object detection using neural networks. In one aspect, one of the methods includes obtaining an input image; processing the input image using an object detection neural network to generate an output sequence that comprises respective token at each of a plurality of time steps, wherein each token is selected from a vocabulary of tokens that comprises (i) a first set of tokens that each represent a respective discrete number from a set of discretized numbers and (ii) a second set of tokens that each represent a respective object category from a set of object categories; and generating, from the tokens in the output sequence, an object detection output for the input image.

Abstract: A composite structure includes a dielectric layer, a two-dimensional graphene layer and a carbon quantum dot film. The dielectric layer is disposed on a first surface of a silicon substrate. The two-dimensional graphene layer is disposed on the dielectric layer. The carbon quantum dot film is disposed on the two-dimensional graphene layer.

Abstract: A UE configured for operating in a 5G NR network may decode signalling that schedules two physical downlink shared channels (PDSCHs) in a same time slot. When the UE is a reduced-bandwidth (RBW) reduced-capacity (RedCap) UE (RBW-RedCap UE), the UE may determine if a total number of allocated PRBs in an OFDM symbol for the two scheduled PDSCHs exceed a predetermined value when the two scheduled PDSCHs either partially or fully overlap in time in non-overlapping PRBs. The UE may also prioritize decoding of one of the two scheduled PDSCHs when the total number of allocated PRBs exceed the predetermined value and when the two scheduled PDSCHs either partially or fully overlap in time in non-overlapping PRBs. If a first of the two scheduled PDSCHs is a unicast PDSCH and a second of the two scheduled PDSCHs is a broadcast PDSCH, the UE may prioritize decoding of the unicast PDSCH.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a lattice layer, a third nitride-based semiconductor layer, a first source electrode and a second electrode, and a gate electrode. The second nitride-based semiconductor layer is disposed over the first nitride-based semiconductor layer. The lattice layer is disposed between the first and second nitride-based semiconductor layers and doped to the first conductivity type. The lattice layer comprises a plurality of first III-V layers and a plurality of second III-V layers alternatively stacked. Each of the first III-V layers has a high resistivity region and a current aperture enclosed by the high resistivity region. The high resistivity region comprises more metal oxides than the current aperture. Interfaces formed between the high resistivity regions and the current apertures among the first III-V layers align with each other. The gate electrode aligns with the current aperture.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a single III-V group semiconductor layer, a third nitride-based semiconductor layer, a first source electrode and a second electrode, and a gate electrode. The second nitride-based semiconductor layer is disposed over the first nitride-based semiconductor layer. The single III-V group semiconductor layer is disposed between the first and second nitride-based semiconductor layers and doped to the first conductivity type. The single III-V group semiconductor layer has a high resistivity region and a current aperture enclosed by the high resistivity region, in which the high resistivity region comprises more metal oxides than the current aperture so as to achieve a resistivity higher than that of the current aperture. The third nitride-based semiconductor layer is disposed over the second nitride-based semiconductor layer.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a lattice layer, a third nitride-based semiconductor layer, a first source electrode and a second electrode, and a gate electrode. The second nitride-based semiconductor layer is disposed over the first nitride-based semiconductor layer. The lattice layer is disposed between the first and second nitride-based semiconductor layers and doped to the first conductivity type. The lattice layer comprises a plurality of first III-V layers and second III-V layers alternatively stacked. Each of the first III-V layers has a high resistivity region and a current aperture enclosed by the high resistivity region. The high resistivity region comprises more metal oxides than the current aperture. At least two of the current apertures have different dimensions such that interfaces formed between the high resistivity regions and the current apertures misalign with each other. The gate electrode aligns with the current aperture.

Abstract: The present invention provides a pipeline overturning lining inner wall cleaner, belonging to the technical field of pipeline inner wall cleaning. The pipeline overturning lining inner wall cleaner includes a cleaner body, where one end of the cleaner body is fixedly connected with a fixed block, one end of an outer side of the cleaner body is provided with a first spring, one end of the first spring is fixedly connected with a sleeve, the outer side of the cleaner body and an outer side of the sleeve are fixedly connected with a rotating base, respectively, one side of each rotating base is provided with a first connecting rod, one side of each first connecting rod is provided with a second connecting rod. A water pump conveys cleaning liquid to a shunt pipe and a drain pipe, and then sprays the cleaning liquid into a pipeline.

Abstract: The present disclosure provides compounds and pharmaceutically acceptable salt thereof, and methods of using the same. The compounds and methods have a range of utilities as therapeutics, diagnostics, and research tools. In particular, the subject compositions and methods are useful for reducing signaling output of oncogenic proteins.

Abstract: A display detection device includes a panel, a detection board, and a detection adapter board. The panel is configured to display. The detection board is coupled to the panel, and is configured to input a detection signal. The detection adapter board is coupled to the panel, and is configured to respond to the detection signal to generate a detection result.