Abstract: An acoustic device simulation system with digital twin acoustic robot comprising: a computing device and a simulation program which can be executed by the computing device to cause the computing device to perform operations comprising the following steps: receiving data from a physical system to create an acoustic computer-assisted engineering model; importing data from the operation of the physical system into the acoustic computer-assisted engineering model, and generating a digital twin virtual three-dimensional model; running a physical simulation through the digital twin virtual three-dimensional model; and modifying or replacing the simulation conditions of the digital twin virtual three-dimensional model in order to obtain simulation results under different conditions.

Abstract: A data processing device includes a memory device, a central processing unit (CPU), and a data processing circuit. The memory device includes a first memory area and a second memory area, wherein the first memory area is arranged to store a first type of data, and the second memory area is arranged to store a second type of data. The CPU is coupled to the memory device, and is arranged to access the memory device, wherein the CPU accesses the first memory area and the second memory area of the memory device. The data processing circuit is coupled to the memory device, and is arranged to access the memory device, wherein the data processing circuit only accesses the first memory area of the memory device.

Abstract: A data processing device includes a memory device, a central processing unit (CPU), and a data processing circuit. The memory device includes a first memory area and a second memory area, wherein the first memory area is arranged to store a first type of data, and the second memory area is arranged to store a second type of data. The CPU is coupled to the memory device, and is arranged to access the memory device, wherein the CPU accesses the first memory area and the second memory area of the memory device. The data processing circuit is coupled to the memory device, and is arranged to access the memory device, wherein the data processing circuit only accesses the first memory area of the memory device.

Abstract: A semiconductor device includes a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode. The gate insulating layer is disposed between the gate electrode and the active layer, the source electrode and the drain electrode are arranged on one side of the gate insulating layer, wherein the gate insulating layer includes multilayer oxide films stacked on each other and at least one interface layer between the multilayer oxide films, and the material of the at least one interface layer is different from the material of the oxide films.

Abstract: A heat dissipating system includes a wind tunnel, a first electronic element, and a second electronic element. The wind tunnel defines a top air inlet channel and a separated bottom, and a top air discharging channel and a separated bottom air discharging channel. Air entering the bottom air inlet channel dissipates heat produced by the first electronic element to the top air discharging channel, to flow out of the wind tunnel. Air entering the top air inlet channel flows to the bottom air discharging channel to dissipate heat produced by the second electronic element, this arrangement avoids heated air from one element being exhausted onto another element.

Abstract: A heat dissipating system includes a wind tunnel, a first electronic element, and a second electronic element. The wind tunnel defines a top air inlet channel and a separated bottom, and a top air discharging channel and a separated bottom air discharging channel. Air entering the bottom air inlet channel dissipates heat produced by the first electronic element to the top air discharging channel, to flow out of the wind tunnel. Air entering the top air inlet channel flows to the bottom air discharging channel to dissipate heat produced by the second electronic element, this arrangement avoids heated air from one element being exhausted onto another element.

Abstract: A server chassis having a low-profile characteristic is disclosed to include a chassis shell, which defines an accommodation chamber that accommodates an electronic device and a motherboard, a fan module located on one open side of the accommodation chamber in the chassis shell and defining a mounting space in the accommodation chamber, and a connector module, which includes a housing movable in and out of the mounting space inside the chassis shell and locked to the chassis shell with screws, a plurality of peripheral apparatuses carried in the housing of the connector module and an adapter board mounted on the rear side of the housing for the connection of the electronic device, the electric fans and the peripheral apparatuses.

Abstract: A manufacturing method of a charge-trapping memory device is provided. This method includes forming a stacked structure having at least a charge-trapping medium. An annealing process in a hydrogen gas is then performed on the stacked structure subsequent to the device fabrication process. The annealing process is conducted at a temperature of about 350° C. to 450° C. and with the concentration of the hydrogen gas greater than 0.5 mole percent.

Abstract: A method for treating fluoride-containing waste water is disclosed. The method includes, first, inducing fluoride-containing waste water and calcium compound into a crystallization reaction tank having a plurality of crystallizing webs so as to conduct a reaction between the fluoride-containing waste water and the calcium compound to form calcium fluoride crystals on the crystallizing webs; meanwhile, stirring the fluoride-containing waste water and the; then, discharging the fluoride-containing waste water out of the crystallization reaction tank for conducting a successive treating step.

Abstract: A decorative board includes two transparent surface layers spaced from each other, a transparent intermediate layer mounted between the surface layers, and a plurality of decorative members located in the intermediate layer. Thus, the surface layers and the intermediate layer are made of transparent material to expose the decorative members so that the decorative members are exposed from the two surface layers and the intermediate layer to enhance the aesthetic quality of the decorative board. In addition, the decorative members are encompassed by and hidden in the intermediate layer completely and are sandwiched between the two surface layers, so that the decorative members will not protrude outwardly from the two surface layers to facilitate a user clearing the decorative board.

Abstract: A manufacturing method of a charge-trapping memory device is provided. This method includes forming a stacked structure having at least a charge-trapping medium. An annealing process in a hydrogen gas is then performed on the stacked structure subsequent to the device fabrication process. The annealing process is conducted at a temperature of about 350° C. to 450° C. and with the concentration of the hydrogen gas greater than 0.5 mole percent.