Patents by Inventor Yi Ling
Yi Ling has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250244653Abstract: A projection device includes a light source device including a light source, a light splitting element, a quarter wave plate, a reflective element. The light source emits an illumination beam having at least two different colors of light and a first linear polarization direction. The light splitting element, the quarter wave plate, the reflective element are on a transmission path of the illumination beam. After the illumination beam passes through the light splitting element, the illumination beam is incident on the quarter wave plate and the reflective element in sequence. After being reflected by the reflective element, the illumination beam passes through the quarter wave plate and the light splitting element in sequence. When the illumination beam passes through the quarter wave plate via the light splitting element, the illumination beam has a second linear polarization direction. The first linear polarization direction is perpendicular to the second linear polarization direction.Type: ApplicationFiled: January 13, 2025Publication date: July 31, 2025Applicant: Qisda CorporationInventors: Chih-Shiung Chien, Ming-Kuen Lin, Yi-Ling Lo
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Publication number: 20250244652Abstract: A projection device includes a light source device including a light source configured to emit an excitation beam, and a light splitting element, a quarter-wave plate, a filter element, and a wavelength conversion element located on a transmission path of the excitation beam. The filter element includes first and second filter regions and a reflective region, and enables the first and second filter regions and the reflective region to enter the transmission path of the excitation beam sequentially. The excitation beam penetrates through the first and second filter regions, and is reflected by the reflective region to form a reflected beam. The excitation beam passes through the filter element and is incident on the wavelength conversion element, causing the wavelength conversion element to generate a wavelength-converted beam, and the wavelength-converted beam is incident on the filter element.Type: ApplicationFiled: January 9, 2025Publication date: July 31, 2025Applicant: Qisda CorporationInventors: Chih-Shiung Chien, Ming-Kuen Lin, Yi-Ling Lo
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Patent number: 12354885Abstract: An electronic structure is provided, in which a plurality of conductors are disposed on one surface of an electronic body, an epoxy molding compound is used as a protective layer to encapsulate the plurality of conductors, a circuit portion is bonded onto the other surface of the electronic body, and a plurality of external bumps and solder material are formed on the circuit portion. Therefore, with the design of the protective layer, heat energy can be effectively transferred from the protective layer to the solder material below during a process of heating the electronic structure so as to avoid a problem of non-wetting of the solder material.Type: GrantFiled: May 1, 2023Date of Patent: July 8, 2025Assignee: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Yi-Ling Chen, Kuan-Wei Chuang
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Patent number: 12354699Abstract: A sensing amplifier circuit includes first and second P-type transistors and first and second N-type transistors. The first P-type transistor includes a gate coupled to an input node, a source and a bulk coupled to a first node, and a drain coupled to an output node. The second P-type transistor includes a gate coupled to an inverted reading-triggered signal, a source coupled to a voltage source, and a drain coupled to the first node. The first N-type transistor includes a gate coupled to the input node, a drain coupled to the output node, and a source coupled to ground. The second N-type transistor includes a gate receiving the inverted reading-triggered signal, a drain coupled to the output node, and a source coupled to the ground. The first P-type transistor includes an N-type well region that is electrically connected to the source and bulk of the first P-type transistor.Type: GrantFiled: November 2, 2023Date of Patent: July 8, 2025Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Po-Yuan Tang, Chih-Chuan Ke, Jian-Yuan Hsiao, Yi-Ling Hung
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Publication number: 20250216725Abstract: A display device includes a first substrate, a plurality of first protrusions, a first alignment layer, a second substrate, a second alignment layer, and a display medium. The first alignment layer is disposed on the first substrate. The second substrate is disposed opposite to the first substrate. The first protrusions are disposed on the second substrate and are separated from each other. The second alignment layer is disposed on the second substrate and the first protrusions. The first alignment layer and the second alignment layer are located between the first substrate and the second substrate. The display medium is located between the first alignment layer and the second alignment layer, where a surface of the first alignment layer and a surface of the second alignment layer facing the display medium have topographies with irregular areas surrounded by micro-structures.Type: ApplicationFiled: December 29, 2023Publication date: July 3, 2025Applicant: AUO CorporationInventor: Yi-Ling Lin
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Patent number: 12349464Abstract: An electronic device includes: a substrate including a first region and a second region, wherein the first region is in a middle position, and the second region is closer to an edge of the substrate than the first region; a first active layer disposed on the substrate and in the second region; a conducting electrode disposed on the substrate and in the second region, wherein the conducting electrode electrically connects to the first active layer and extends along a first direction; and a conductive layer disposed on the substrate and in the second region, wherein the conductive layer includes an opening, wherein a minimum distance from an edge of the opening to the first active layer along the first direction is different from a minimum distance from another edge of the opening to the first active layer along a second direction different from the first direction.Type: GrantFiled: March 31, 2022Date of Patent: July 1, 2025Assignee: InnoLux CorporationInventors: Yi-Ling Yu, Chun-Liang Lin
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Publication number: 20250203770Abstract: A flexible circuit board includes a flexible substrate, circuit lines, a solder resist layer and shaping strips. The flexible substrate has a first part and a second part which is wider than the first part and easy to be bent. The circuit lines are arranged on the flexible substrate and covered by the solder resist layer. The shaping strips are arranged on the solder resist layer located on the second part and are provided to help to shape the bent second part back to the original one as flat pressing the flexible circuit board.Type: ApplicationFiled: March 28, 2024Publication date: June 19, 2025Inventors: Ting-Yi Kuo, Yi-Ling Hsieh, Chiu-Hung Lai
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Publication number: 20250174902Abstract: An antenna structure includes a feeding radiation element, a first radiation element, a second radiation element, an extension radiation element, and a dielectric substrate. The feeding radiation element has a feeding point. The first radiation element is coupled to a ground voltage. The first radiation element is adjacent to the feeding radiation element. The second radiation element is coupled to the ground voltage. The second radiation element is adjacent to the feeding radiation element. The extension radiation element is coupled to the first radiation element. The feeding radiation element and the second radiation element are at least partially surrounded by the first radiation element. The feeding radiation element, the first radiation element, the second radiation element, and the extension radiation element are all disposed on the dielectric substrate.Type: ApplicationFiled: January 11, 2024Publication date: May 29, 2025Inventors: Kai-Hsiang CHANG, Chung-Ting HUNG, Chin-Lung TSAI, Yi-Ling TSENG, Yu-Chen ZHAO, Chun-I CHENG
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Publication number: 20250174900Abstract: An antenna structure includes a feeding radiation element, a first grounding radiation element, a second grounding radiation element, a connection radiation element, an extension radiation element, and a dielectric substrate. The feeding radiation element has a feeding point. The first grounding radiation element has a first grounding point. The first grounding radiation element is adjacent to the feeding radiation element. The second grounding radiation element has a second grounding point. The connection radiation element is coupled between the first grounding radiation element and the second grounding radiation element. The extension radiation element is coupled to the connection radiation element. A closed slot is surrounded by the connection radiation element and the extension radiation element.Type: ApplicationFiled: January 11, 2024Publication date: May 29, 2025Inventors: Yu-Chen ZHAO, Chung-Ting HUNG, Chin-Lung TSAI, Yi-Ling TSENG, Kai-Hsiang CHANG, Chun-I CHENG
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Publication number: 20250149071Abstract: A sensing amplifier circuit includes first and second P-type transistors and first and second N-type transistors. The first P-type transistor includes a gate coupled to an input node, a source and a bulk coupled to a first node, and a drain coupled to an output node. The second P-type transistor includes a gate coupled to an inverted reading-triggered signal, a source coupled to a voltage source, and a drain coupled to the first node. The first N-type transistor includes a gate coupled to the input node, a drain coupled to the output node, and a source coupled to ground. The second N-type transistor includes a gate receiving the inverted reading-triggered signal, a drain coupled to the output node, and a source coupled to the ground. The first P-type transistor includes an N-type well region that is electrically connected to the source and bulk of the first P-type transistor.Type: ApplicationFiled: November 2, 2023Publication date: May 8, 2025Applicant: Vanguard International Semiconductor CorporationInventors: Po-Yuan TANG, Chih-Chuan KE, Jian-Yuan HSIAO, Yi-Ling HUNG
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Publication number: 20250142719Abstract: A flexible circuit board designed for chip integration is provided. The flexible circuit board includes an insulating substrate, a conductive copper layer, a first tin layer, a second tin layer, and a first solder resist layer. The first tin layer has a first tin thickness, and the second tin layer has a greater second tin thickness. A first tin surface of the first tin layer and a second tin surface of the second tin layer are substantially level.Type: ApplicationFiled: October 8, 2024Publication date: May 1, 2025Inventors: Chiu-Hong Lai, Wen Ping Hsu, Yi Ling Hsieh, Dong-Sheng Li, Yi Ren Chian, San Lee, Pei-Ying Lee, Ting-Yi Kuo
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Publication number: 20250132246Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, a method includes receiving a workpiece comprising a first transistor and a second transistor formed over a first side of a substrate, forming a first multi-layer interconnect (MLI) structure over the first side of the substrate, wherein the first MLI structure comprising a first plurality of metal lines and a first plurality of vias, after the forming of the first MLI structure, forming a source/drain contact directly under a source/drain feature of the first transistor, and forming a second MLI structure under the source/drain contact and under a second side of the substrate, the second side being opposite the first side, wherein the MLI structure comprises a second plurality of metal lines and a second via, a thickness of the second via is greater than a thickness of one of the first plurality of vias.Type: ApplicationFiled: October 20, 2023Publication date: April 24, 2025Inventors: Yi Ling Liu, Tsung-Chieh Hsiao, Liang-Wei Wang, Dian-Hau Chen
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Publication number: 20250125530Abstract: An antenna structure includes a feeding radiation element, a first radiation element, a second radiation element, a third radiation element, and a carrier element. The feeding radiation element has a feeding point. The first radiation element is coupled to the feeding radiation element. The first radiation element has a meandering structure. The second radiation element is coupled to the feeding radiation element. The second radiation element is adjacent to the first radiation element. The third radiation element is coupled to the ground voltage. The third radiation element is adjacent to the second radiation element. The feeding radiation element, the first radiation element, the second radiation element, and the third radiation element are disposed on the carrier element.Type: ApplicationFiled: December 28, 2023Publication date: April 17, 2025Inventors: Chun-I CHENG, Chung-Ting HUNG, Chin-Lung TSAI, Yi-Ling TSENG, Yu-Chen ZHAO, Kai-Hsiang CHANG
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Publication number: 20250126848Abstract: A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.Type: ApplicationFiled: December 20, 2024Publication date: April 17, 2025Inventors: Yu-Chu LIN, Chi-Chung JEN, Wen-Chih CHIANG, Yi-Ling LIU, Huai-jen TUNG, Keng-Ying LIAO
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Publication number: 20250125520Abstract: A wearable device includes a first radiation metal element, a second radiation metal element, a ground metal element, a third radiation metal element, and a carrier element. The first radiation metal element is coupled to a positive feeding point. The second radiation metal element is coupled to the positive feeding point. The ground metal element is coupled to a negative feeding point. The third radiation metal element is adjacent to the ground metal element. A coupling gap is formed between the third radiation metal element and the ground metal element. The first radiation metal element, the second radiation metal element, the ground metal element, and the third radiation metal element are disposed on the carrier element. An antenna structure is formed by the first radiation metal element, the second radiation metal element, the ground metal element, and the third radiation metal element.Type: ApplicationFiled: December 28, 2023Publication date: April 17, 2025Inventors: Yi-Ling TSENG, Chin-Lung TSAI, Chung-Ting HUNG, Kai-Hsiang CHANG, Yu-Chen ZHAO
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Publication number: 20250088286Abstract: Embodiments of a method and apparatus for communications are disclosed. In an embodiment, a communications device includes a controller configured to perform periodic or aperiodic in-device interference mitigation and a wireless transceiver configured to conduct wireless communications in response to the periodic or aperiodic in-device interference mitigation.Type: ApplicationFiled: August 30, 2024Publication date: March 13, 2025Inventors: Liwen Chu, Kiseon Ryu, Huizhao Wang, Hongyuan Zhang, Yi-Ling Chao
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Publication number: 20250082818Abstract: An artificial dressing, use of artificial dressing for promoting wound healing and method of manufacturing artificial dressing are disclosed. The artificial dressing comprises a gelatin, a polysorbate 20 and a glutaraldehyde for promoting wound healing. The manufacturing method of the artificial dressing comprises the steps of enabling the composition of the gelatin, the polysorbate 20 and the glutaraldehyde to perform a foaming step, a molding step and a freeing step in sequence. The artificial dressing has obvious pores and is capable of absorbing a liquid weight about 25-35 times of its body weight. After thermal disintegration experiments and adhesion tests, disintegration of the artificial dressing is not observed, and in animal experiments, compared with commercially available dressings, the artificial dressing of the invention is capable of accelerating wound healing when applied dryly; and capable of proliferating functional tissues of the wound when applied wetly.Type: ApplicationFiled: September 5, 2024Publication date: March 13, 2025Applicant: Anti-Microbial Savior BioteQ Co., Ltd.Inventors: Yi-Ju Tsai, YING-TING YEH, YI-LING HONG, MENG-YI BAI
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Patent number: 12247924Abstract: Disclosed herein is a composite material suitable for use in surface-enhanced Raman scattering, the material comprising a substrate layer having a surface; a plurality of layers of core-shell particles formed on the surface of the substrate layer, wherein the core is formed from a plasmonic metal nanoparticle, and the shell is formed from a metal-organic framework (MOF), and wherein the plurality of layers of core-shell particles provide a thickness of from 0.5 to 10 um on the surface of the substrate layer. In specific embodiments, the plasmonic metal nanoparticles are silver nanocubes, and the MOF is ZIF-8.Type: GrantFiled: July 30, 2020Date of Patent: March 11, 2025Assignee: Nanyang Technological UniversityInventors: Xing Yi Ling, Gia Chuong Phan Quang
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Publication number: 20250071860Abstract: A method for operation of a first communication device in a wireless local area network (WLAN) communication channel, having a plurality of component channels, between the first communication device and a second communication device is described. A first physical layer (PHY) protocol data unit (PPDU) and a second PPDU, distinct from the first PPDU, are generated. The first PPDU and second PPDU are transmitted simultaneously to the second communication device over the WLAN communication channel, including: transmitting the first PPDU via a first component channel within a first radio frequency (RF) channel segment that occupies a first frequency bandwidth, and transmitting the second PPDU via a second component channel within a second RF channel segment that occupies a second frequency bandwidth that does not overlap the first frequency bandwidth segment, and is separated from the first frequency bandwidth segment by a frequency gap.Type: ApplicationFiled: November 11, 2024Publication date: February 27, 2025Inventors: Liwen CHU, Hongyuan ZHANG, Hui-Ling LOU, Yi-Ling CHAO
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Publication number: 20250062185Abstract: An electronic package and a manufacturing method thereof are provided, in which an offset suppression layer is formed on a carrier, a first electronic element and a second electronic element are respectively disposed on the offset suppression layer, and an encapsulant is formed on the offset suppression layer to respectively cover the first electronic element and the second electronic element. The offset suppression layer effectively suppresses or prevents possible offset caused by the encapsulant to the first electronic element and the second electronic element, thereby avoiding yield loss of the semiconductor package.Type: ApplicationFiled: December 13, 2023Publication date: February 20, 2025Inventors: Yi-Ling CHEN, Kuan-Wei CHUANG