Patents by Inventor Yi-Lu Chang
Yi-Lu Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250024700Abstract: An opto-electronic device includes: (1) a subpixel region including: an electrode; an organic layer disposed over the electrode; and a conductive coating disposed over the organic layer; and (2) a light transmissive region including a nucleation inhibiting coating, wherein a surface of the nucleation inhibiting coating in the light transmissive region is substantially free of the conductive coating.Type: ApplicationFiled: September 20, 2024Publication date: January 16, 2025Applicant: OTI Lumonics Inc.Inventors: Michael HELANDER, Zhibin WANG, Yi-Lu CHANG, Qi WANG, Jacky QIU
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Publication number: 20250015510Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an IR and an NIR spectrum.Type: ApplicationFiled: September 20, 2024Publication date: January 9, 2025Applicant: OTI Lumionics, Inc.Inventors: Yi-Lu CHANG, Qi WANG, Zhibin WANG, Michael Helander, Yingjie Zhang
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Patent number: 12178064Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)Type: GrantFiled: July 6, 2023Date of Patent: December 24, 2024Assignee: OTI Lumionics Inc.Inventors: Yi-Lu Chang, Qi Wang, Scott Nicholas Genin, Michael Helander, Jacky Qiu, Zhibin Wang, Benoit Lessard
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Publication number: 20240414936Abstract: An opto-electronic device having a plurality of layers, comprises first electrode(s), layered stacks, both extending in a lateral aspect, and a deposited material. A first electrode has an associated emissive region. Each stack comprises a second electrode between a semiconducting layer and a patterning coating, a first one on a first electrode surface, and a second one on a structure surface adjacent thereto, separated by a first gap, that has a lateral component parallel to, and/or a longitudinal component transverse to, the lateral aspect. The material is disposed thereon for electrically coupling corresponding layer(s) of the first and second stacks, including the second electrode.Type: ApplicationFiled: August 14, 2024Publication date: December 12, 2024Applicant: OTI LUMIONICS INC.Inventors: Zhibin WANG, Yi-Lu CHANG, Qi WANG
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Patent number: 12167634Abstract: An electroluminescent device includes: (1) a first region, a second region, and an intermediate region arranged between the first region and the second region; (2) a conductive coating disposed in the second region; and (3) a nucleation inhibiting coating disposed in the first region, the nucleation inhibiting coating extending to cover at least a portion of the intermediate region, wherein a thickness of the nucleation inhibiting coating in the intermediate region is less than a thickness of the nucleation inhibiting coating in the first region, and wherein a surface of the nucleation inhibiting coating in the first region is substantially free of the conductive coating.Type: GrantFiled: November 23, 2019Date of Patent: December 10, 2024Assignee: OTI Lumionics Inc.Inventors: Zhibin Wang, Yi-Lu Chang, Qi Wang, Michael Helander
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Patent number: 12150374Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.Type: GrantFiled: March 6, 2023Date of Patent: November 19, 2024Assignee: OTI Lumionics Inc.Inventors: Yi-Lu Chang, Qi Wang, Michael Helander, Jacky Qui, Zhibin Wang, Thomas Lever
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Publication number: 20240381754Abstract: An opto-electronic device includes: (1) a substrate including a first region and a second region; and (2) a conductive coating covering the second region of the substrate. The first region of the substrate is exposed from the conductive coating, and an edge the conductive coating adjacent to the first region of the substrate has a contact angle that is greater than about 20 degrees.Type: ApplicationFiled: July 10, 2024Publication date: November 14, 2024Applicant: OTI Lumionics Inc.Inventors: Yi-Lu Chang, Qi WANG, Dong GAO, Scott Nicholas GENIN, Michael HELANDER, Jacky QIU, Zhibin WANG
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Patent number: 12113279Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an IR and an NIR spectrum.Type: GrantFiled: September 22, 2021Date of Patent: October 8, 2024Assignee: OTI Lumionics Inc.Inventors: Yi-Lu Chang, Qi Wang, Zhibin Wang, Michael Helander, Yingjie Zhang
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Patent number: 12101954Abstract: An opto-electronic device includes: (1) a subpixel region including: an electrode; an organic layer disposed over the electrode; and a conductive coating disposed over the organic layer; and (2) a light transmissive region including a nucleation inhibiting coating, wherein a surface of the nucleation inhibiting coating in the light transmissive region is substantially free of the conductive coating.Type: GrantFiled: May 20, 2020Date of Patent: September 24, 2024Assignee: OTI Lumionics Inc.Inventors: Michael Helander, Zhibin Wang, Yi-Lu Chang, Qi Wang, Jacky Qiu
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Patent number: 12069939Abstract: An opto-electronic device includes: (1) a substrate including a first region and a second region; and (2) a conductive coating covering the second region of the substrate. The first region of the substrate is exposed from the conductive coating, and an edge the conductive coating adjacent to the first region of the substrate has a contact angle that is greater than about 20 degrees.Type: GrantFiled: January 20, 2023Date of Patent: August 20, 2024Assignee: OTI Lumionics Inc.Inventors: Yi-Lu Chang, Qi Wang, Dong Gao, Scott Nicholas Genin, Michael Helander, Jacky Qiu, Zhibin Wang
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Publication number: 20240099055Abstract: A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.Type: ApplicationFiled: November 13, 2023Publication date: March 21, 2024Applicant: OTI Lumionics Inc.Inventors: Michael HELANDER, Zhibin WANG, Yi-Lu CHANG, Qi WANG
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Publication number: 20240065082Abstract: A semiconductor device that facilitates absorption of EM radiation thereon and a method manufacturing same. The device extends in at least one lateral aspect. An EM radiation-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and/or comprise the deposited material co-deposited with a co-deposited dielectric material. The EM radiation-absorbing layer may be disposed on a supporting dielectric layer and/or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and/or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and/or seed material on the second layer surface.Type: ApplicationFiled: September 15, 2023Publication date: February 22, 2024Applicant: OTI Lumionics, Inc.Inventors: Zhibin WANG, Qi WANG, Yi-Lu CHANG, Michael HELANDER
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Publication number: 20230413649Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one low(er)-index coating disposed on a first layer surface and at least one EM radiation-modifying layer embedded within the at least one low(er)-index coating and comprising at least one particle structure comprising a deposited material. Embedding the at least one particle structure of the at least one EM radiation-modifying layer within the at least one low(er)-index coating modifies the absorption spectrum of the at least one EM radiation-modifying layer for EM radiation passing at least partially therethrough at a non-zero angle relative to the lateral aspect therein in at least a part of the EM spectrum.Type: ApplicationFiled: October 11, 2021Publication date: December 21, 2023Applicant: OTI LUMIONICS INC.Inventors: Michael HELANDER, Zhibin WANG, Yi-Lu CHANG, Qi WANG, Yingjie Zhang
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Publication number: 20230413603Abstract: A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.Type: ApplicationFiled: September 29, 2021Publication date: December 21, 2023Applicant: OTI LUMIONICS INC.Inventors: Michael HELANDER, Zhibin WANG, Yi-Lu CHANG, Qi WANG
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Publication number: 20230371348Abstract: A semiconductor device that facilitates absorption of EM radiation thereon and a method manufacturing same. The device extends in at least one lateral aspect. An EM radiation-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and/or comprise the deposited material co-deposited with a co-deposited dielectric material. The EM radiation-absorbing layer may be disposed on a supporting dielectric layer and/or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and/or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and/or seed material on the second layer surface.Type: ApplicationFiled: September 13, 2021Publication date: November 16, 2023Applicant: OTI Lumionics Inc.Inventors: Zhibin WANG, Qi Wang, Yi-Lu CHANG, Michael HELANDER
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Publication number: 20230363196Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)Type: ApplicationFiled: July 6, 2023Publication date: November 9, 2023Applicant: OTI LUMIONICS INC.Inventors: Yi-Lu CHANG, Qi WANG, Scott Nicholas GENIN, Michael HELANDER, Jacky QIU, Zhibin WANG, Benoit LESSARD
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Publication number: 20230354677Abstract: A device having a plurality of layers comprises a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof; and a deposited layer comprised of a deposited material, disposed on a second layer surface, wherein an initial sticking probability against deposition of the deposited layer onto a surface of the NIC in the first portion is substantially less than the initial sticking probability against deposition of the deposited layer onto the second layer surface, such that the NIC is substantially devoid of a closed coating of the deposited material and wherein the NIC comprises a compound containing a rare earth element. The deposited layer can comprise a closed coating on the second layer surface in a second portion of the lateral aspect, and/or a discontinuous layer of at least one particle structure on a surface of the NIC.Type: ApplicationFiled: May 17, 2021Publication date: November 2, 2023Applicant: OTI LUMIONICS, INC.Inventors: Yi-Lu CHANG, Qi WANG, Zhibin WANG, Michael HELANDER
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Patent number: 11785831Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.Type: GrantFiled: April 13, 2022Date of Patent: October 10, 2023Assignee: OTI Lumionics Inc.Inventors: Yi-Lu Chang, Qi Wang, Michael Helander, Jacky Qiu, Zhibin Wang, Thomas Lever
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Publication number: 20230301160Abstract: A semiconductor device having a plurality of layers that extend in an interface portion and a non-interface portion of at least one lateral aspect defined by a lateral axis of the device. A low(er)-index layer, that may comprise a low-index material, that has a first refractive index at a wavelength, is disposed on a first layer surface in at least the interface portion. A higher-index layer, that may comprise a high-index material, that has a second refractive index at a wavelength, is disposed on an exposed layer surface of the device, to define an index interface with the low(er)-index layer in the interface portion. The second refractive index exceeds the first refractive index. A quantity of deposited material may be disposed on a second layer surface in the non-interface portion. The higher-index layer may cover the deposited material in the non-interface portion.Type: ApplicationFiled: July 24, 2021Publication date: September 21, 2023Applicant: OTI Lumionics Inc.Inventors: Qi WANG, Yi-Lu CHANG, Yingjie ZHANG, Zhibin WANG, Michael HELANDER
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Patent number: 11751415Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I).Type: GrantFiled: January 2, 2019Date of Patent: September 5, 2023Assignee: OTI Lumionics Inc.Inventors: Yi-Lu Chang, Qi Wang, Scott Nicholas Genin, Michael Helander, Jacky Qiu, Zhibin Wang, Benoit Lessard