Patents by Inventor Yi-Luen HUANG

Yi-Luen HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12001641
    Abstract: In some embodiments, a method is provided. The method includes identifying an incident situation based upon a sensor detecting an abnormal condition. One or more life safety systems are queried to obtain life safety system data. One or more databases, comprising equipment information, chemical information, personnel information, and/or emergency response contingency procedures, are queried to obtain on-site information. The life safety system data and the on-site information are integrated together to generate incident situation information. The incident situation information is displayed through an electronic display.
    Type: Grant
    Filed: March 16, 2023
    Date of Patent: June 4, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Adolph Lin, Jung Shiung Chen, Mao Rong Huang, Jet-Luen Shiu, Che-Chuan Chi, Yi-Feng Hsieh, Yen-Yu Chen
  • Patent number: 9647172
    Abstract: A light-emitting diode comprises a substrate; a semiconductor stack on the substrate, wherein the semiconductor stack comprises a first semiconductor layer, an active layer for emitting a light, and a second semiconductor layer; a first oxide layer on the semiconductor stack, wherein the first oxide layer has a top surface opposite to the semiconductor stack, and the top surface comprises a first region and a second region; and a first pad on the second region; wherein the first region is rougher than the second region, wherein the first oxide layer comprises an impurity, and a concentration of the impurity of the first oxide layer in the first region is higher than that of the impurity of the first oxide layer in the second region.
    Type: Grant
    Filed: August 14, 2015
    Date of Patent: May 9, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Hao Wei, Yi-Luen Huang
  • Publication number: 20150349229
    Abstract: A light-emitting diode comprises a substrate; a semiconductor stack on the substrate, wherein the semiconductor stack comprises a first semiconductor layer, an active layer for emitting a light, and a second semiconductor layer; a first oxide layer on the semiconductor stack, wherein the first oxide layer has a top surface opposite to the semiconductor stack, and the top surface comprises a first region and a second region; and a first pad on the second region; wherein the first region is rougher than the second region, wherein the first oxide layer comprises an impurity, and a concentration of the impurity of the first oxide layer in the first region is higher than that of the impurity of the first oxide layer in the second region.
    Type: Application
    Filed: August 14, 2015
    Publication date: December 3, 2015
    Inventors: Chih-Hao WEI, Yi-Luen HUANG
  • Publication number: 20150228861
    Abstract: A method for manufacturing a light-emitting device, comprising steps of: providing a semiconductor stack; forming an first conductive oxide layer on the semiconductor stack, wherein first conductive oxide layer has a top surface opposite to the semiconductor stack, and the top surface comprises a first region and a second region; forming a first layer contacting the first region of the top surface, wherein the first layer comprises a metal material; providing a first solution; forming a second layer by a reaction between the first solution, the first layer and the first conductive oxide layer; and removing the second layer to reveal the first region.
    Type: Application
    Filed: February 7, 2014
    Publication date: August 13, 2015
    Applicant: Epistar Corporation
    Inventors: Chih-Hao WEI, Yi-Luen HUANG