Patents by Inventor Yi-Lun Chen

Yi-Lun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220020595
    Abstract: A technique for semiconductor manufacturing is provided. The technique includes the operations as follows. A semiconductor structure having a first material and a second material is revived. The first material has a first incubation time to a first etching chemistry. The second material has a second incubation time to the first etching chemistry. The first incubation time is shorter than the second incubation time. A first main etch to the semiconductor structure for a first duration by the first etching chemistry is performed. The first duration is greater than the first incubation time and shorter than the second incubation time.
    Type: Application
    Filed: January 20, 2021
    Publication date: January 20, 2022
    Inventors: HAN-YU LIN, LI-TE LIN, TZE-CHUNG LIN, FANG-WEI LEE, YI-LUN CHEN, JUNG-HAO CHANG, YI-CHEN LO, FO-JU LIN, KENICHI SANO, PINYEN LIN
  • Publication number: 20210360904
    Abstract: An animal specimen picking device and system are provided. The animal specimen picking device includes a collecting device and a driving device. The collecting device includes at least one opening through which an animal specimen is collected. The driving device drives the collecting device to move on a collecting surface. The animal specimen is on the collecting surface. The driving device includes a spherical shell, a controller, and a driving module. The controller is located in the spherical shell and configured to generate a control signal. The driving module is located in the spherical shell and configured to drive the spherical shell to roll according to the control signal.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 25, 2021
    Applicant: Tamkang University
    Inventors: Yang-Han Lee, Yu-De Liao, Yi-Lun Chen
  • Publication number: 20210297898
    Abstract: A wireless communication method for reducing the receival of unwanted data is provided. The wireless communication method for a TCP session includes the steps of determining whether a TCP session associated with a first subscriber identity module (SIM) of the UE is not required; and in response to determining that the TCP session is not required, the processor terminates the TCP session.
    Type: Application
    Filed: March 17, 2020
    Publication date: September 23, 2021
    Inventors: Chih-Yuan TSAI, I-Wei TSAI, Jun-Jie SU, Yi-Lun CHEN
  • Publication number: 20210287037
    Abstract: An object detection method and apparatus include obtaining a point cloud of a scene that includes location information of points. The point cloud is mapped to a 3D voxel representation. A convolution operation is performed on the feature information of the 3D voxel to obtain a convolution feature set and initial positioning information of a candidate object region is determined based on the convolution feature set. A target point is located in the candidate object region in the point cloud is determined and the initial positioning information of the candidate object region is adjusted based on the location information and target convolution feature information of the target point. Positioning information of a target object region is obtained to improve object detection accuracy.
    Type: Application
    Filed: May 27, 2021
    Publication date: September 16, 2021
    Applicant: Tencent Technology (Shenzhen) Company Limited
    Inventors: Yi Lun CHEN, Shu LIU, Xiao Yong SHEN, Yu Wing TAI, Jia Ya JIA
  • Publication number: 20210202712
    Abstract: A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.
    Type: Application
    Filed: March 15, 2021
    Publication date: July 1, 2021
    Inventors: Yi-Lun Chen, Chao-Hsien Huang, Li-Te Lin, Chun-Hsiung Lin
  • Publication number: 20210193817
    Abstract: The present disclosure relates to a semiconductor device that includes a first terminal formed on a fin region and having a first spacer. The semiconductor device further includes a second terminal having a hard mask and a second spacer opposing the first spacer. The hard mask and the second spacer are formed using different materials. The semiconductor device also includes a seal layer formed between first and second spacers of the first and second terminals, respectively. The semiconductor device further includes an air gap surrounded by the seal layer, the fin region, and the first and second spacers.
    Type: Application
    Filed: July 23, 2020
    Publication date: June 24, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Yi-Lun CHEN
  • Patent number: 10964795
    Abstract: A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: March 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Lun Chen, Chao-Hsien Huang, Li-Te Lin, Chun-Hsiung Lin
  • Patent number: 10861953
    Abstract: A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Lun Chen, Chao-Hsien Huang, Li-Te Lin, Chun-Hsiung Lin
  • Publication number: 20200373405
    Abstract: A semiconductor device includes a substrate, an isolation structure, a first gate structure, a first gate spacer, and an epitaxy structure. The substrate has a semiconductor fin. The isolation structure is over the substrate and laterally surrounds the semiconductor fin. The first gate structure is over the substrate and crosses the semiconductor fin. The first gate spacer extends along a sidewall of the first gate structure, in which the first gate spacer has a stepped sidewall distal to the first gate structure. The epitaxy structure is over the semiconductor fin, in which the epitaxy structure is in contact with the stepped sidewall of the first gate spacer.
    Type: Application
    Filed: August 8, 2020
    Publication date: November 26, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Lun CHEN, Bau-Ming WANG, Chun-Hsiung LIN
  • Patent number: 10847633
    Abstract: In some embodiments, a method is provided. Dummy gate stacks are formed over a semiconductor substrate. An interlayer dielectric (ILD) layer is formed over the dummy gate stacks. A first portion of the ILD layer over top surfaces of the dummy gate stacks is removed, such that a second portion of the ILD layer remains between the dummy gate stacks. The dummy gate stacks are replaced with metal gate stacks. Neutral NF3 radicals into the water are applied to etch the ILD layer.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: November 24, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Ruei Jhan, Yi-Lun Chen, Fang-Wei Lee, Han-Yu Lin, Li-Te Lin, Pinyen Lin
  • Publication number: 20200353313
    Abstract: A pedal structure is respectively provided with different coupling structures on two sides of a pedal body to couple and lock the feet of users who wear different types of shoes on the pedal body. One of the sides of the pedal body is provided with a clip coupling structure for coupling and locking a cleat mounted to a bottom of a road bike cycling shoe, and the opposite side of the pedal body is provided with a toe-clip pedal for tying and fixing a regular sports shoe and a skidding prevention structure for preventing skidding relative to the sole of the sports shoe. With such a dual-sided pedal arrangement, the feet of users who wear different types of shoes can be securely held on the pedal body to prevent skidding or idle pedaling during pedaling of the exercise bike to thereby improve accuracy of the training data detected by a training signal detection device.
    Type: Application
    Filed: April 29, 2020
    Publication date: November 12, 2020
    Inventor: YI-LUN CHEN
  • Patent number: 10741667
    Abstract: A method includes forming a semiconductor fin over a substrate; forming a helmet stack on a top surface of the semiconductor fin; forming a spacer layer over the helmet stack and on opposite sidewalls of the semiconductor fin; and etching the helmet layer and the spacer layer to expose the top surface and the sidewalls of the semiconductor fin.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: August 11, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Lun Chen, Bau-Ming Wang, Chun-Hsiung Lin
  • Publication number: 20200187041
    Abstract: The present invention provides a wireless communication method of a wireless device, wherein the wireless communication method includes the steps of: generating a first link-layer packet in a data link layer of the wireless device; using a first channel to transmit the first link-layer packet to an electronic device external to the wireless device; determining if a transmission of the first link-layer packet satisfies a condition; when the transmission of the first link-layer packet satisfies the condition, generating a second link-layer packet in the data link layer by duplicating data within the first link-layer packet; and using a second channel to transmit the second link-layer packet to the electronic device, and using the first channel to transmit the first link-layer packet again to the electronic device concurrently.
    Type: Application
    Filed: November 1, 2019
    Publication date: June 11, 2020
    Inventors: Tsai-Yuan Hsu, Yi-Lun Chen, Chiao-Chih Chang
  • Patent number: 10675506
    Abstract: An embedded magnetic induction pedal device adapted to be mountable to a bicycle pedal crank, which includes a pedal body, a bearing, a pedal axle, a magnetic induction unit, a permanent magnet unit, a processing unit, a transmission device, and a power supply unit. The pedal body is formed with an axle hole in which the magnetic induction unit is arranged. The pedal axle is received in the axle hole. The eccentric seat is mounted to the pedal axle. The permanent magnet unit is retained in the eccentric seat and is set at a position that is deviated from an axis of the pedal axle so that during a relative motion between the permanent magnet unit and the magnetic induction unit, the magnetic induction unit detects a variation of the magnetic field, based on which the processing unit calculate and determine operation data of the pedal crank that are transmitted by the transmission device.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: June 9, 2020
    Assignee: Bion Inc.
    Inventor: Yi-Lun Chen
  • Publication number: 20200079881
    Abstract: A process for surface treatment of a silicone rubber article includes the steps of: (a) surface-treating the silicone rubber article with ultraviolet radiation to permit hydrogen groups on a surface of the silicone rubber article to be converted to hydroxyl groups; and (b) subjecting the surface-treated silicone rubber article to another surface treatment with a poly(fluoroalkylene oxide) ether trialkoxy silane-based composition to permit a chemical reaction therebetween.
    Type: Application
    Filed: March 6, 2019
    Publication date: March 12, 2020
    Applicant: Pioneer Material Precision Tech Co., Ltd.
    Inventors: Jung-Hua Shen, Yi-Lun Chen
  • Patent number: 10551260
    Abstract: A pedal exercise signal detection device includes a sleeve having an outer circumference having a pressure signal connection device and a pressure detection unit mounted thereon; a first bearing disposed in the sleeve; a stator having a positioning axle having an end formed with a fastening hole; a fastener element fastening the stator and the sleeve together; a pedal having an axle hole into which the sleeve is inserted to be positioned therein and a receiving trough including a through opening corresponding to the pressure signal connection device; and a control circuit board disposed in the receiving trough and including signal reader units that extend through the through opening and corresponding to the pressure signal connection device.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: February 4, 2020
    Assignee: BION INC.
    Inventor: Yi-Lun Chen
  • Publication number: 20200006515
    Abstract: A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.
    Type: Application
    Filed: September 10, 2019
    Publication date: January 2, 2020
    Inventors: Yi-Lun Chen, Chao-Hsien Huang, Li-Te Lin, Chun-Hsiung Lin
  • Patent number: 10466475
    Abstract: A head mounted virtual reality object synchronized physical training system includes a virtual reality device, a physical training equipment, and a physiological signal sensor. The virtual reality device includes a display operable to display a virtual reality object according to an operation of the user. The virtual reality device is detachably mounted to a head of the user and provides the user with a function of interaction. The physical training equipment includes an exercise data sensor operable to detect exercise data that the user operates the physical training equipment. The physiological signal sensor is operable to detect a human body physiological signal and a human body movement signal of the user. The physical training equipment and the physiological signal sensor have a function of synchronization with the virtual reality object displayed on the virtual reality device.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: November 5, 2019
    Assignee: BION INC.
    Inventor: Yi-Lun Chen
  • Publication number: 20190334008
    Abstract: A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.
    Type: Application
    Filed: April 30, 2018
    Publication date: October 31, 2019
    Inventors: Yi-Lun Chen, Chao-Hsien Huang, Li-Te Lin, Chun-Hsiung Lin
  • Patent number: 10435099
    Abstract: A personal exercise measuring safety system is provided. Aforementioned system is applied in a bicycle and includes an image acquiring or information transmitting device, an exercise measuring device, a personal mobile digital measuring device and a power supply device. The image acquiring or information transmitting device is configured on one portion of the bicycle by a fixator. The personal mobile digital measuring device electrically connected with the image acquiring or information transmitting device by a digital image transmitting device so as to receive an image or information. The personal mobile digital measuring device selectively displays the image or information, or provides an external handheld communication device for receiving and displaying the image or information. The power supply device is configured to provide power to each device.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: October 8, 2019
    Assignee: BION INC.
    Inventor: Yi-Lun Chen