Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

Abstract: A crystal oscillator includes an oscillating substrate, a hollow frame, a first electrode, and a second electrode. The oscillating substrate includes a main oscillating region and a thinned region that has a thickness smaller than that of the main oscillating region. The first and second electrodes are disposed on a first surface of the oscillating substrate and a second surface opposite to the first surface, respectively. The hollow frame is disposed on the second surface. The second electrode includes a second electrode portion that has at least one opening in positional correspondence with the thinned region. A method for making the crystal oscillator is also provided herein.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A crystal oscillator includes a piezoelectric substrate having a thinned portion with opposite upper and lower surfaces respectively defining upper and lower surface work portions, and at least one side portion having at least one recessed portion with a bottom surface flush with the upper surface of the thinned portion. A top electrode layer has a top work portion disposed on the upper surface work portion, and a top extension extending from the top work portion onto the bottom surface of the recessed portion. A bottom electrode layer has a bottom work portion disposed on the lower surface work portion, and a bottom extension extending from the bottom work portion toward the one end of the thinned portion and then bending upward and inward onto the bottom surface of the recessed portion. A method of making the crystal oscillator is also disclosed.

Abstract: A crystal oscillator includes an oscillating substrate, a hollow frame, a first electrode, and a second electrode. The oscillating substrate includes a main oscillating region and a thinned region that has a thickness smaller than that of the main oscillating region. The first and second electrodes are disposed on a first surface of the oscillating substrate and a second surface opposite to the first surface, respectively. The hollow frame is disposed on the second surface. The second electrode includes a second electrode portion that has at least one opening in positional correspondence with the thinned region. A method for making the crystal oscillator is also provided herein.

Abstract: Embodiments of the present disclosure pertain to compositions that include a compound that inhibits the histone acetyl transferase activity of a protein, such as p300 and/or CBP. Further embodiments of the present disclosure pertain to methods of inhibiting the histone acetyl transferase activity of a protein by exposing the protein to a composition that contains one or more of the compounds of the present disclosure. The compositions of the present disclosure may be exposed to a protein in vitro or in vivo. Additional embodiments of the present disclosure pertain to methods of treating a cancer in a subject by administering a composition of the present disclosure to the subject in order to treat the cancer.

Abstract: A device for separating tramp metals from liquid raw materials includes a body unit, a holding unit, a magnetic unit, a rinsing unit, and a driving unit. The body unit includes a tank for feeding-in and feeding-out liquid raw materials. The holding unit is coupled to the tank and includes and a plurality of non-magnetic holders received in the tank. The magnetic unit is mounted on the tank and includes an enclosure haying a telescopic wall to be in a compressed or extended state. The rinsing unit is fixed on the interior of the tank to rinse the non-magnetic holders. The driving unit is coupled the tank and the magnetic unit for driving the magnet unit moving between a first and second positions. An assembly is assembled from the device. And a method is carried out by the device or the assembly.

Abstract: A crystal oscillator includes a piezoelectric substrate, a first electrode, a second electrode, and a support frame. The first electrode includes a first electrode portion disposed on a first surface of the piezoelectric substrate. The second electrode is disposed on a second surface of the piezoelectric substrate opposite to the first surface of the piezoelectric substrate. The support frame is made of a photoresist material, and is disposed on the second surface. The support frame surrounds the second electrode portion. At least a portion of the second extending electrode portion is located outside the support frame. A method for making the crystal oscillator is also provided herein.

Abstract: A crystal oscillator includes an oscillating substrate, a hollow frame, a first electrode, and a second electrode. The oscillating substrate includes a main oscillating region and a thinned region that has a thickness smaller than that of the main oscillating region. The first and second electrodes are disposed on a first surface of the oscillating substrate and a second surface opposite to the first surface, respectively. The hollow frame is disposed on the second surface. The second electrode includes a second electrode portion that has at least one opening in positional correspondence with the thinned region. A method for making the crystal oscillator is also provided herein.

Abstract: A technique, as well as select implementations thereof, pertaining to dynamic adjustment of video frame sampling rate is described. The technique may involve receiving a first video signal comprising a first plurality of video frames and determining a frame rate of the first plurality of video frames. The technique may also involve adjusting a sampling rate according to the determined frame rate of the first plurality of video frames. The technique may further involve sampling the first plurality of video frames at the adjusted sampling rate. The technique may additionally involve generating a second video signal comprising a second plurality of video frames based on the sampled first plurality of video frames.

Abstract: A technique, as well as select implementations thereof, pertaining to dynamic adjustment of video frame sampling rate is described. The technique may involve receiving a first video signal comprising a first plurality of video frames and determining a frame rate of the first plurality of video frames. The technique may also involve adjusting a sampling rate according to the determined frame rate of the first plurality of video frames. The technique may further involve sampling the first plurality of video frames at the adjusted sampling rate. The technique may additionally involve generating a second video signal comprising a second plurality of video frames based on the sampled first plurality of video frames.

Abstract: A light emitting diode package structure includes a substrate, a light emitting diode chip and a terminal connecting portion. The substrate has a first surface and a second surface that are opposite to each other, and a side surface surrounding and connecting the first surface and the second surface. The first surface has a predetermined die bonding area and the light emitting diode chip is disposed on the die bonding area. The terminal connecting portion protrudes from the side surface and is electrically connected to the light emitting diode chip.