Abstract: A spiral yarn structure includes a core yarn comprising at least one core filament which is a filament fiber of 5-25D, a cover yarn comprising a plurality of cover fibers formed by stretching roves having a count ranging from 0.5 Ne to 2.0 Ne, wherein the cover fibers encloses the core yarn, and a wrap yarn wrapping the cover yarn at a twist factor K?3, wherein the wrap yarn comprises at least one wrap filament which is a filament fiber of 5-25D, and the at least one wrap filament wraps an outer side of the cover yarn at an inclined angle to form the spiral yarn structure having a count ranging from 40 Ne to 80 Ne.

Abstract: Described herein are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof. Compounds of the present invention are useful for inhibiting bacterial growth.

Abstract: A spiral yarn structure includes a core yarn comprising at least one core filament which is a filament fiber of 5-25D, a cover yarn comprising a plurality of cover fibers formed by stretching roves having a count ranging from 0.5 Ne to 2.0 Ne, wherein the cover fibers encloses the core yarn, and a wrap yarn wrapping the cover yarn at a twist factor K?3, wherein the wrap yarn comprises at least one wrap filament which is a filament fiber of 5-25D, and the at least one wrap filament wraps an outer side of the cover yarn at an inclined angle to form the spiral yarn structure having a count ranging from 40 Ne to 80 Ne.

Abstract: Described herein are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof. Compounds of the present invention are useful for inhibiting bacterial growth. Methods of using the compounds for treating and/or preventing bacterial infection as well as methods of preparing the compounds are also described.

Abstract: Described herein are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof. Compounds of the present invention are useful for inhibiting bacterial growth. Methods of using the compounds for treating and/or preventing bacterial infection as well as methods of preparing the compounds are also described.

Abstract: A novel pharmaceutical composition comprising a compound of formula (I) is disclosed. The novel compound can include a pharmaceutically acceptable carrier. The invention further comprises methods for making compounds of formula (I) using Dbv29, and to the use of compound of formula (I) to treat bacterial infections.

Abstract: A novel pharmaceutical composition comprising a compound of formula (I) is disclosed. The novel compound can include a pharmaceutically acceptable carrier. The invention further comprises methods for making compounds of formula (I) using Dbv29, and to the use of compound of formula (I) to treat bacterial infections.

Abstract: A novel pharmaceutical composition comprising a compound of formula (I) is disclosed. The novel compound can include a pharmaceutically acceptable carrier. The invention further comprises methods for making compounds of formula (I) using Dbv29, and to the use of compound of formula (I) to treat bacterial infections.

Abstract: A novel pharmaceutical composition comprising a compound of formula (I) is disclosed. The novel compound can include a pharmaceutically acceptable carrier. The invention further comprises methods for making compounds of formula (I) using Dbv29, and to the use of compound of formula (I) to treat bacterial infections.

Abstract: The present invention provides a composition for preparing porous dielectric thin films containing pore-generating material, said composition comprising gemini detergent, and/or a quaternary alkyl ammonium salt, a thermo-stable organic or inorganic matrix precursor, and solvent for dissolving the two solid components. There is also provided an interlayer insulating film having good mechanical properties such as hardness, modulus and hydroscopicity, which is required for semiconductor devices.

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Abstract: Disclosed is a composition for preparing an organic insulator, the composition comprising (i) at least one organic-inorganic hybrid material; (ii) at least one organometallic compound and/or organic polymer; and (iii) at least one solvent for dissolving the above two components, so that an organic insulator using the same has a low threshold voltage and driving voltage, and high charge carrier mobility and Ion/Ioff ratio, thereby enhancing insulator characteristics. Further, the preparation of organic insulating film can be carried out by wet process, so that simplification of the process and cut of cost are achieved.

Abstract: A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, thus all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

Abstract: A composition for preparing an organic insulator, the composition comprising (i) at least one organic-inorganic hybrid material; (ii) at least one organometallic compound and/or organic polymer; and (iii) at least one solvent for dissolving the above two components, so that an organic insulator using the same has a low threshold voltage and driving voltage, and high charge carrier mobility and Ion/Ioff ratio, thereby enhancing insulator characteristics. Further, the preparation of organic insulating film can be carried out by wet process, so that simplification of the process and cut of cost are achieved.

Abstract: A composition for forming a porous dielectric film which is prepared by dissolving a siloxane-based precursor containing hydroxyl groups or alkoxy groups and a pore-generating material together with a condensation catalyst generator capable of curing the siloxane-based resin precursor, in an organic solvent. The porous dielectric film has a low dielectric constant and improved physical properties and is formed by coating the composition onto a substrate, followed by light exposure to cause polycondensation at low temperature. A method for forming a negative pattern of a porous dielectric film is also provided without the use of a photoresist by exposing the coated film to light through a mask, and removing unexposed regions with a developing agent.

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnecting layers of a semiconductor device.

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Abstract: An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.