Abstract: A magnetoresistive element comprises a nonmagnetic nano-current-channel (NCC) structure provided on a surface of the magnetic recording layer, which is opposite to a surface of the magnetic recording layer where the tunnel barrier layer is provided, and comprising a spatial distribution of perpendicular conducting channels throughout the NCC structure thickness and surrounded by an insulating medium, making the magnetic recording layer a magnetically soft-hard composite structure. Correspondingly, the critical write current and write power are reduced with reversal modes of exchange-spring magnets of the magnetically soft-hard composite structure.

Abstract: A spinning solution, a heat-resistant creep-resistant fiber and preparation method therefor are provided. The spinning solution includes a polyethylene, a solvent and a photoinitiator, and the content of the photoinitiator is 0.2 wt %-10 wt % of the mass of the polyethylene; gel-spinning and multi-stage drafting the spinning solution; then performing ultraviolet irradiation by an ultraviolet light source to obtain a heat-resistant creep-resistant polyethylene fiber; the light intensity and the time of the ultraviolet light source is 100 W/cm2-5000 W/cm2 and 10 s-600 s, respectively; the gel content and the crystallinity of the heat-resistant creep-resistant polyethylene fiber is 20 wt %-100 wt % and 50 wt %-90 wt %, respectively; the creep rate of the fiber is 10?8 s?1-10?7 s?1 under conditions of a temperature of 70° C. and a load of 300 MPa; the fracture temperature of the fiber is 155° C.-245° C. under conditions of a load of 15 MPa and a heating rate of 2° C./min.

Abstract: An example apparatus for generating synthesized images includes a receiver to receive a frame, a mask and external images. The apparatus also includes a foreground augmenter to generate augmented foregrounds in the frame based on the mask. The apparatus includes a background augmenter to generate augmented backgrounds based on the frame, the mask, and the external images. The apparatus also further includes an image synthesizer to generate a synthesized image based on the generated augmented foregrounds and the augmented backgrounds.

Abstract: The invention comprises a method of forming a novel magnetic pinning structure having a (100) textured or cube-textured reference layer through a non-epitaxial texturing approach so that an excellent coherent tunneling effect is achieved in a pMTJ element due to its texture structure of CoFe BCC (100)/MgO rocksalt (100)/CoFe BCC (100). Correspondingly, a high MR ratio and a high pinning strength on the reference layer can be achieved for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

Abstract: A magnetoresistive element comprises a nonmagnetic sidewall-current-channel (SCC) structure provided on a surface of the SOT material layer that exhibits the Spin Hall Effect, which is opposite to a surface of the SOT material layer where the magnetic recording layer is provided, and comprising an insulating medium in a central region of the SCC structure, and a conductive medium being a sidewall of the SCC structure and surrounding the insulating medium, making an electric current crowding inside the SOT material layer and the magnetic recording layer to achieve a spin-orbit torque and a higher spin-polarization degree for an applied electric current.

Abstract: A perpendicular magnetoresistive element comprises (counting from the element bottom): a reference layer having magnetic anisotropy in a direction perpendicular to a film surface and having an invariable magnetization direction; a tunnel barrier layer; a crystalline recording layer having magnetic anisotropy in a direction perpendicular to a film surface and having a variable magnetization direction; an oxide buffer layer; and a cap layer, wherein the crystalline recording layer consists of a CoFe alloy that is substantially free of boron and has BCC (body-centered cubic) CoFe grains having epitaxial growth with (100) plane parallel to a film surface.

Abstract: An ultra-fast magnetic random access memory (MRAM) comprises a three terminal bottom-pinned composite SOT magnetic tunneling junction (bCSOT-MTJ) element including (counting from top to bottom) a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer.

Abstract: A magnetoresistive element comprises a nonmagnetic nano-current-channel (NCC) structure provided on a surface of the magnetic recording layer, which is opposite to a surface of the magnetic recording layer where the tunnel barrier layer is provided, and comprising a spatial distribution of perpendicular conducting channels throughout the NCC structure thickness and surrounded by an insulating medium, making the magnetic recording layer a magnetically soft-hard composite structure. Correspondingly, the critical write current and write power are reduced with reversal modes of exchange-spring magnets of the magnetically soft-hard composite structure.

Abstract: The invention comprises a method of forming a magnetic free layer having a (100) texture and a novel magnetic pinning structure having a (100) textured or cube-textured reference layer through a non-epitaxial texturing approach so that an excellent coherent tunneling effect is achieved in a pMTJ element due to its texture structure of Fe or CoFe BCC (100)/MgO rocksalt (100)/Fe or CoFe BCC (100). The invention also discloses a pMTJ element comprising a soft-magnetic adjacent layer having at least one high-permeability material layer having a near-zero magnetostriction. Correspondingly, a high MR ratio and a coherent domain reversal of the magnetic free layer can be achieved for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

Abstract: The invention disclosed a method to make an implanted hard mask with ultra-small dimensions for fabricating integrated nonvolatile random access memory. Instead of directly depositing hard mask material on top of the memory film stack element, we first make ultra-small VIA holes on a pattern transfer molding (PTM) layer using a reverse memory mask, then fill in the hard mask material into the VIA holes within the PTM material. Ultra-small hard mask pillars are formed after removing the PTM material. To improve the adhesion of the hard mask pillars with the underneath memory stack element, a hard mask sustaining element (HMSE) is added below PTM. Due to a better materials adhesion between HMSE and the hard mask, a stronger hard mask array can be formed.

Abstract: The invention comprises a method of forming a novel magnetic pinning structure having a (100) textured or cube-textured reference layer through a non-epitaxial texturing approach so that an excellent coherent tunneling effect is achieved in a pMTJ element due to its texture structure of CoFe BCC (100)/MgO rocksalt (100)/CoFe BCC (100). Correspondingly, a high MR ratio and a high pinning strength on the reference layer can be achieved for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

Abstract: A magnetoresistive element comprises a novel iPMA cap layer on a surface of a ferromagnetic recording layer. The iPMA cap layer introduces giant interfacial magnetic anisotropy energies (G-iMAE) on the interface between the recording layer and the iPMA cap layer, yielding a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer.

Abstract: An ultra-fast magnetic random access memory (MRAM) comprises a three terminal composite SOT magnetic tunneling junction (CSOT-MTJ) element including a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer.

Abstract: A perpendicular magnetoresistive element comprises (counting from the element bottom): a reference layer having magnetic anisotropy in a direction perpendicular to a film surface and having an invariable magnetization direction; a tunnel barrier layer; a crystalline recording layer having magnetic anisotropy in a direction perpendicular to a film surface and having a variable magnetization direction; an oxide buffer layer; and a cap layer, wherein the crystalline recording layer consists of a CoFe alloy that is substantially free of boron and has BCC (body-centered cubic) CoFe grains having epitaxial growth with (100) plane parallel to a film surface.

Abstract: The invention comprises a novel composite seed structure (CSS) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

Abstract: A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to the tunnel barrier layer and having a body-centered cubic structure with a (100) texture, and a second free layer having a body-centered cubic structure with a (110) texture or a face-centered cubic structure with a (111) texture, and a crystal-breaking layer inserted between the first free layer and the second free layer.

Abstract: A magnetoresistive element using combined spin-transfer-torque controlled magnetic bias and VCMA effects comprising a free layer and an adjacent-bias layer separated by a nonmagnetic spacing layer, wherein the free layer has an interfacial perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, the adjacent-bias layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, and the perpendicular anisotropy of the free layer is sufficiently higher than that of the adjacent-bias layer such that the critical switching current to reverse the free layer magnetization direction is at least 3 times as high as the critical switching current to reverse the adjacent-bias layer magnetization direction.

Abstract: A magnetoresistive element using combined spin-transfer-torque controlled magnetic bias and VCMA effects comprising a free layer and an adjacent-bias layer separated by a nonmagnetic spacing layer, wherein the free layer has an interfacial perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, the adjacent-bias layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, and the perpendicular anisotropy of the free layer is sufficiently higher than that of the adjacent-bias layer such that the critical switching current to reverse the free layer magnetization direction is at least 3 times as high as the critical switching current to reverse the adjacent-bias layer magnetization direction.

Abstract: A composite recording structure comprising a first magnetic free layer comprising an amorphous magnetic material sub-layer, a Boron-absorbing material sub-layer atop the amorphous magnetic material sub-layer and a Co/Ni superlattice sub-layer atop the Boron-absorbing material sub-layer; one or many repeats of a substructure including a nonmagnetic spacing layer and a Co/Ni superlattice free layer, atop the first magnetic free layer, wherein said first magnetic free layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, said each Co/Ni superlattice free layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface.

Abstract: A method of forming a bottom-pinned magnetoresistive element comprising a composite recording structure that includes a first magnetic free layer and a second magnetic free layer containing Ni atoms, separated by an oxide spacing layer. The first magnetic free layer is Ni-free and the first magnetic free layer and the second magnetic free layer are magnetically parallel-coupled. A magnetic STT-enhancing structure is further provided atop the cap layer, wherein the magnetic STT-enhancing structure comprises a first magnetic material layer atop the cap layer and having a perpendicular magnetic anisotropy and an invariable magnetization anti-parallel to the magnetization direction of the reference layer, a second anti-ferromagnetic coupling (AFC) layer atop the first magnetic material layer, and a second magnetic material layer atop the second AFC layer.