Patents by Inventor Yi-Min Pan

Yi-Min Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FABRICATING A DIFFERENTIAL DOPED SOLAR CELL
    Publication number: 20130288421
    Abstract: A method of fabricating a differential doped solar cell is provided. The method comprises the steps of (a) providing a light doped semiconductor substrate; (b) forming a heavy doped layer having the same type of dopant used in step (a) on a front surface of the semiconductor substrate; and (c) forming an emitter layer having a different type of dopant used in step (a) on a surface of the heavy doped layer to constitute a p-n junction with the heavy doped layer.
    Type: Application
    Filed: April 16, 2013
    Publication date: October 31, 2013
    Applicant: BIG SUN Energy Technology Incorporation
    Inventors: Chi-Hsiung CHANG, Kuan-Lun CHANG, Hung-Yi CHANG, Yi-Min PAN, Jun-Min WU, Ying-Yen CHIU
  • Method of fabricating a differential doped solar cell
    Patent number: 8445311
    Abstract: A method of fabricating a differential doped solar cell is provided. The method comprises the steps of (a) providing a light doped semiconductor substrate; (b) forming a heavy doped layer having the same type of dopant used in step (a) on a front surface of the semiconductor substrate; and (c) forming an emitter layer having a different type of dopant used in step (a) on a surface of the heavy doped layer to constitute a p-n junction with the heavy doped layer.
    Type: Grant
    Filed: November 22, 2011
    Date of Patent: May 21, 2013
    Assignee: Big Sun Energy Technology Incorporation
    Inventors: Chi-Hsiung Chang, Kuan-Lun Chang, Hung-Yi Chang, Yi-Min Pan, Jun-Min Wu, Ying-Yen Chiu
  • METHOD OF FABRICATING A DIFFERENTIAL DOPED SOLAR CELL
    Publication number: 20120164779
    Abstract: A method of fabricating a differential doped solar cell is provided. The method comprises the steps of (a) providing a light doped semiconductor substrate; (b) forming a heavy doped layer having the same type of dopant used in step (a) on a front surface of the semiconductor substrate; and (c) forming an emitter layer having a different type of dopant used in step (a) on a surface of the heavy doped layer to constitute a p-n junction with the heavy doped layer.
    Type: Application
    Filed: November 22, 2011
    Publication date: June 28, 2012
    Inventors: Chi-Hsiung CHANG, Kuan-Lun Chang, Hung-Yi Chang, Yi-Min Pan, Jun-Min Wu, Ying-Yen Chiu