Patents by Inventor Yi-Ming A. Chen
Yi-Ming A. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10193590Abstract: A small form-factor pluggable (SFP) transceiver is provided for being inserted into an electrical connection slot of an electronic apparatus. The SFP transceiver includes a housing, two electrical signal connectors disposed a front end of the housing, and an unlocking assembly having an unlocking member and an interlock member. The housing includes an engaging portion disposed on a bottom surface thereof and configured to be engaged with the electrical connection slot, thereby firmly fastening the SFP transceiver into the electrical connection slot. The unlocking member has a manipulating portion exposed at the front end and arranged adjacent to a top surface of the housing. The interlock member is movably disposed on the housing. When the manipulating portion is rotated in a direction away from the front end and the top surface, the unlocking member moves the interlock member to separate the engaging portion from the electrical connection slot.Type: GrantFiled: January 11, 2018Date of Patent: January 29, 2019Assignee: AXCEN PHOTONICS CORP.Inventor: Yi-Ming Chen
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Patent number: 10182507Abstract: A small form-factor pluggable transceiver includes a housing, which includes an upper cover, a lower cover fastened to the upper cover, and a front plate arranged between an end of the upper cover and an end of the lower cover. The front plate, the upper cover, and the lower cover are assembled together so as to jointly define an accommodating space. The front plate includes a metallic layer defining a main surface thereof and two plastic structures connected to the metallic layer. The front plate has two through holes penetrating through the metallic layer for respectively accommodating two electrical signal connectors, and the two plastic structures are respectively arranged in the two through holes. When the two electrical signal connectors are respectively disposed in the two through holes, the plastic structures are arranged between the metallic layer and the electrical signal connectors separated from the metallic layer.Type: GrantFiled: January 12, 2018Date of Patent: January 15, 2019Assignee: AXCEN PHOTONICS CORP.Inventor: Yi-Ming Chen
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Patent number: 10156335Abstract: A light-emitting device comprises a semiconductor structure comprising a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first intermediate layer, a second intermediate layer, and an active region capable of emitting radiation, wherein the active region is between the first intermediate layer and the second intermediate layer, the first intermediate layer is in direct contact with the first conductivity-type semiconductor layer, the second intermediate layer is in direct contact with the second conductivity-type semiconductor layer, and the active region comprises alternated well layers and barrier layers, wherein each barrier layer has a thickness; wherein a first difference between a refractive index of the first intermediate layer and a refractive index of the first conductivity-type semiconductor layer is less than a second difference between a refractive index of the second intermediate layer and a refractive index of the second conductivity-type semiconductType: GrantFiled: August 1, 2017Date of Patent: December 18, 2018Assignee: EPISTAR CORPORATIONInventors: Jun-Yi Li, Chun-Yu Lin, Shih-Chang Lee, Yi-Ming Chen
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Publication number: 20180331151Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.Type: ApplicationFiled: July 23, 2018Publication date: November 15, 2018Inventors: Tsung-Hsien YANG, Han-Min WU, Jhih-Sian WANG, Yi-Ming CHEN, Tzu-Ghieh HSU
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Publication number: 20180294383Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.Type: ApplicationFiled: June 8, 2018Publication date: October 11, 2018Inventors: Shih-I CHEN, Wei-Yu CHEN, Yi-Ming CHEN, Ching-Pei LIN, Tsung-Xian LEE
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Patent number: 10084115Abstract: The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.Type: GrantFiled: March 23, 2017Date of Patent: September 25, 2018Assignee: EPISTAR CORPORATIONInventors: Chun-Yu Lin, Yi-Ming Chen, Shih-Chang Lee, Yao-Ning Chan, Tzu-Chieh Hsu
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Patent number: 10050656Abstract: A small form-factor pluggable (SFP) transceiver provided for being inserted into an electrical connection slot includes a housing, two electrical signal connectors, a circuit board, and two flexible assemblies. The housing defines an accommodating space. Each electrical signal connector has an inserting end arranged outside a front end of the housing and an opposite connecting end arranged in the accommodating space. The circuit board is fixed to the housing and is arranged in the accommodating space. Each flexible assembly has an end detachably connected to the circuit board and an opposite end detachably connected to the respective electrical signal connector. The SFP transceiver is configured to receive a signal, and the signal travels from the each electrical signal connector to the circuit board through the corresponding flexible assembly. Each flexible assembly, the corresponding electrical signal connector, and the circuit board are configured to be independently tested.Type: GrantFiled: January 11, 2018Date of Patent: August 14, 2018Assignee: AXCEN PHOTONICS CORP.Inventor: Yi-Ming Chen
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Publication number: 20180214469Abstract: A composition for inhibiting a liver tumor in an organism is disclosed. The composition includes an activator being 1,2,3,4,6-penta-O-galloyl-Beta-D-glucopyranoside (PGG), wherein PGG is extracted from at least one of Paeonia lactiflora Pall. and Galla Chinesis.Type: ApplicationFiled: April 14, 2016Publication date: August 2, 2018Applicant: KAOHSIUNG MEDICAL UNIVERSITYInventors: Yi-Ming Chen, Chia-Hung Yen, Chung-Kuang Lu
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Patent number: 10038030Abstract: A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation path; an electrode contact layer covering the side wall of the first area, wherein the electrode contact layer is separated from electrode isolation layer; an electrical connecting structure covering the second area; and an electrical contact layer under the electrical connecting structure, wherein the electrical contact layer directly contacts the electrical connecting structure; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.Type: GrantFiled: October 26, 2017Date of Patent: July 31, 2018Assignee: EPISTAR CORPORATIONInventors: Tsung-Hsien Yang, Han-Min Wu, Jhih-Sian Wang, Yi-Ming Chen, Tzu-Ghieh Hsu
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Patent number: 10038128Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.Type: GrantFiled: September 12, 2017Date of Patent: July 31, 2018Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Yao-Ning Chan, Tzu Chieh Hsu, Yi-ming Chen, Hsin-Chih Chiu, Chih-Chiang Lu, Chia-liang Hsu, Chun-Hsien Chang
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Patent number: 10018573Abstract: A dual-function wafer handling apparatus for handling a wafer includes an aligner for rotating the wafer, an ID reader disposed corresponding to an edge of the wafer for reading an ID of the wafer, and an optical defect inspection unit for capturing images to analysis.Type: GrantFiled: October 13, 2014Date of Patent: July 10, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ming-Han Tsai, Sheng-Hsiang Chuang, Guan-Cyun Li, Yen-Ju Wei, Chiung-Min Lin, Yi-Ming Chen
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Publication number: 20180188651Abstract: A photosensitive composition is provided. The photosensitive composition includes a composition for forming polyimide, a photoinitiator, a photo cross-linking agent, and a thermal cross-linking agent. The composition for forming polyimide includes a diamine monomer component, an anhydride monomer component, and a polyimide modifier. The diamine monomer component includes a long-chain aliphatic diamine monomer, a carboxylic acid-containing diamine monomer, and a triazole compound. The anhydride monomer component includes a dianhydride monomer and a monoanhydride monomer. The polyimide modifier has a double bond and an epoxy group.Type: ApplicationFiled: March 6, 2017Publication date: July 5, 2018Applicant: TAIFLEX Scientific Co., Ltd.Inventors: Shih-Chang Lin, Yi-Ming Chen, Chiu-Feng Chen, Chun-Yi Kuo
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Patent number: 10014441Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.Type: GrantFiled: December 22, 2014Date of Patent: July 3, 2018Assignee: EPISTAR CORPORATIONInventors: Shih-I Chen, Wei-Yu Chen, Yi-Ming Chen, Ching-Pei Lin, Tsung-Xian Lee
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Publication number: 20180145222Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.Type: ApplicationFiled: December 28, 2017Publication date: May 24, 2018Inventors: Yi-Ming CHEN, Tsung-Hsien YANG
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Publication number: 20180055893Abstract: The present invention is directed to a use of anti-fatigue probiotic bacteria for improving exercise performance, particularly the fatigue caused by exercise. The anti-fatigue probiotic bacteria increases muscle mass and endurance, decreases blood lactate, ammonia, and creatine kinase concentration, and changes body composition; the said bacteria can be used to improve exercise performance.Type: ApplicationFiled: December 20, 2016Publication date: March 1, 2018Applicant: NATIONAL TAIWAN SPORT UNIVERSITYInventors: YI-MING CHEN, TSUNG-YU TSAI, CHI-CHANG HUANG
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Publication number: 20180062033Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a reflective structure formed on the first-type semiconductor layer; and a first interface and a second interface formed between light-emitting stack and the reflective structure; wherein a critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface; wherein the reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface.Type: ApplicationFiled: October 25, 2017Publication date: March 1, 2018Inventors: Yi-Ming CHEN, Hao-Min KU, Chih-Chiang LU, Tzu-Chieh HSU
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Publication number: 20180052439Abstract: A remote machining optimization system for a machine tool is provided, which includes an input unit configured to input a machining parameter including a spindle speed and a cut depth; a receiving unit configured to receive sound signals and vibration signals from the machine tool; a processing unit configured to generate a machining program with a program generating module, to modify the spindle speed and the cut depth according to the sound signals with a speed optimization module and a depth optimization module, respectively; a communication unit configured to send the machining program to the machine tool; and a storage unit configured to store the modified spindle speed and the cut depth.Type: ApplicationFiled: October 21, 2016Publication date: February 22, 2018Inventors: Yi-Hsuan Chen, Ta-Jen Peng, Yi-Ming Chen, Shu-Chung Liao, Sheng-Ming Ma
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Publication number: 20180047779Abstract: A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation path; an electrode contact layer covering the side wall of the first area, wherein the electrode contact layer is separated from electrode isolation layer; an electrical connecting structure covering the second area; and an electrical contact layer under the electrical connecting structure, wherein the electrical contact layer directly contacts the electrical connecting structure; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.Type: ApplicationFiled: October 26, 2017Publication date: February 15, 2018Inventors: Tsung-Hsien YANG, Han-Min WU, Jhih-Sian WANG, Yi-Ming CHEN, Tzu-Ghieh HSU
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Patent number: 9887321Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.Type: GrantFiled: November 18, 2014Date of Patent: February 6, 2018Assignee: Epistar CorporationInventors: Yi-Ming Chen, Tsung-Hsien Yang
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Patent number: D818974Type: GrantFiled: July 12, 2016Date of Patent: May 29, 2018Assignee: EPISTAR CORPORATIONInventors: Hui-Fang Kao, Tzu-Chieh Hsu, Yao-Ning Chan, Yi-Ming Chen