Abstract: A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. The plurality of the second type of epitaxial layers is oxidized in the source/drain region. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed in the opening.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: The present disclosure relates to transgenic fungal cells and methods of making the same such that the transgenic fungal cells include one or more exogenous biosynthetic gene clusters integrated into the host genome. The genes of the exogenous biosynthetic gene cluster may be operably linked to a transgenic region of an endogenous biosynthetic gene cluster that includes a native promoter to control expression of the exogenous genes.

Abstract: Modified fungal strains having deleted gene clusters are provided. The modified fungal strains include A. nidulans. The deleted gene clusters are selected from the group of gene clusters responsible for the biosynthesis of sterigmatocystin, emericellamides, asperfuranone, monodictyphenone, terrequinone, F9775A, F9775B, asperthecin, and both portions of the split cluster that makes austinol and dehydroaustinol. Methods for making compounds by culturing the fungus in a growth media and separating the compound from the fungus and/or separating the compound from the growth media are included, as are the compounds and compositions comprising them.

Abstract: Modified fungal strains having deleted gene clusters are provided. The modified fungal strains include A. nidulans. The deleted gene clusters are selected from the group of gene clusters responsible for the biosynthesis of sterigmatocystin, emericellamides, asperfuranone, monodictyphenone, terrequinone, F9775A, F9775B, asperthecin, and both portions of the split cluster that makes austinol and dehydroaustinol. Methods for making compounds by culturing the fungus in a growth media and separating the compound from the fungus and/or separating the compound from the growth media are included, as are the compounds and compositions comprising them.

Abstract: A method of treating a Th1-mediated disorder includes administering to a subject in need of the treatment an effective amount of a compound of the formula I: wherein R1 is H, alkyl, aryl, or cyclyl; R2 is pyranose; R3 is H or alkyl; m is 2, 3, 4, 5, or 6; n is 0, 1, 2, or 3; o is 0, 1, 2, 3, 4; p is 1, 2, 3, or 4; and the Th1-mediated disorder is non-obese diabetes, Crohn's colitis, autoimmune hemolytic anemia, rheumatoid arthritis, autoimmune encephalitis, multiple sclerosis, or autoimmune myocarditis. Also disclosed is a pharmaceutical composition including a compound of formula I above and a pharmaceutically acceptable carrier.

Abstract: The present invention provides compounds having estrogenic activity selected from the group consisting of RRR-?-tocopherol, hydro-Q9 chromene, coenzyme Q9, cycloartane, 1-Feruloyl glycerol, ?-tocopherol-9, and analogues thereof. The compounds of the present invention activate ER? and ER?, and express high estrogenic activity.

Abstract: Methods useful, for example, in identifying plant compositions that have immunomodulatory activity. Also disclosed is an Asteraceae plant immunomodulatory composition useful for increasing an immune response, e.g., IFN ? or IL-2 transcription.

Abstract: A method of treating a Th1-mediated disorder includes administering to a subject in need of the treatment an effective amount of a compound of the formula I: wherein R1 is H, alkyl, aryl, or cyclyl; R2 is pyranose; R3 is H or alkyl; m is 2, 3, 4, 5, or 6; n is 0, 1, 2, or 3; o is 0, 1, 2, 3, 4; p is 1, 2, 3, or 4; and the Th1-mediated disorder is non-obese diabetes, Crohn's colitis, autoimmune hemolytic anemia, rheumatoid arthritis, autoimmune encephalitis, multiple sclerosis, or autoimmune myocarditis. Also disclosed is a pharmaceutical composition including a compound of formula I above and a pharmaceutically acceptable carrier.

Abstract: The present invention provides compounds having estrogenic activity selected from the group consisting of RRR-?-tocopherol, hydro-Q9 chromene, coenzyme Q9, cycloartane, 1-Feruloyl glycerol, ?-tocopherol-9, and analogues thereof. The compounds of the present invention activate ER? and ER?, and express high estrogenic activity.

Abstract: A compound of the formula: wherein R1 is H, alkyl, aryl, or cyclyl; R2 is pyranose; R3 is H or alkyl; m is 2, 3, 4, 5, or 6; n is 0, 1, 2, or 3; o is 0, 1, 2, 3, 4; and p is 1, 2, 3, or 4. Also disclosed is use of the compound to inhibit Th1 differentiation, promote Th2 differentiation, and treat certain disorders.

Abstract: Methods useful, for example, in identifying plant compositions that have immunomodulatory activity. Also disclosed is an Asteraceae plant immunomodulatory composition useful for increasing an immune response, e.g., IFN ? or IL-2 transcription.