Abstract: A composite solid base catalyst, a manufacturing method thereof and a manufacturing method of glycidol are provided. The composite solid base catalyst includes an aluminum carrier and a plurality of calcium particles. The plurality of calcium particles are supported by the aluminum carrier. Beta basic sites of the composite solid base catalyst are 0.58 mmol/g-3.89 mmol/g.

Abstract: A touch event processing circuit includes receiving circuits and an average circuit. Each of the receiving circuits includes an operation amplifier, a current processing circuit, and a touch event detection circuit. The operation amplifier receives an input signal from a touch panel, and outputs a first current signal and a second current signal. The current processing circuit processes the first current signal and the second current signal according to a first current average signal and a second current average signal, to generate a processed current signal. The touch event detection circuit detects a touch event according to the processed current signal. The average circuit receives first current signals and second current signals from the receiving circuits; performs an average operation upon the first current signals, to generate the first current average signal; and performs an average operation upon the second current signals, to generate the second current average signal.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A semiconductor structure includes a first metal-dielectric-metal layer, a first dielectric layer, a first conductive layer, a second conductive layer, and a second dielectric layer. The first metal-dielectric-metal layer includes a plurality of first fingers, a plurality of second fingers, and a first dielectric material. The first fingers are electrically connected to a first voltage. The second fingers are electrically connected to a second voltage different from the first voltage, and the first fingers and the second fingers are arranged in parallel and staggeredly. The first dielectric material is between the first fingers and the second fingers. The first dielectric layer is over the first metal-dielectric-metal layer. The first conductive layer is over the first dielectric layer. The second conductive layer is over the first conductive layer. The second dielectric layer is between the first conductive layer and the second conductive layer.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A touch-sensing substrate including a substrate, a patterned conductive layer and a patterned insulating layer is provided. The substrate has a plurality of first striped regions and a plurality of second striped regions. The first striped regions are intersected with the second striped regions to define a plurality of sensing-pad disposition regions. The patterned conductive layer includes a plurality of sensing pads disposed in the sensing-pad disposition regions. The patterned insulating layer is disposed on the first striped regions and the second striped regions. The patterned insulating layer and the patterned conductive layer are spliced to form a patterned light-shielding layer. The patterned light-shielding layer has a plurality of enclosed notches arranged in array, wherein parts of the enclosed notches are surrounded by the patterned conductive layer, and other parts of the enclosed notches are surrounded by the patterned conductive layer and the patterned insulating layer.

Abstract: A touch-sensing substrate including a substrate, a patterned conductive layer and a patterned insulating layer is provided. The substrate has a plurality of first striped regions and a plurality of second striped regions. The first striped regions are intersected with the second striped regions to define a plurality of sensing-pad disposition regions. The patterned conductive layer includes a plurality of sensing pads disposed in the sensing-pad disposition regions. The patterned insulating layer is disposed on the first striped regions and the second striped regions. The patterned insulating layer and the patterned conductive layer are spliced to form a patterned light-shielding layer. The patterned light-shielding layer has a plurality of enclosed notches arranged in array, wherein parts of the enclosed notches are surrounded by the patterned conductive layer, and other parts of the enclosed notches are surrounded by the patterned conductive layer and the patterned insulating layer.

Abstract: A vacuum device. The vacuum device includes a frame, a first glass substrate, a second glass substrate and a plurality of metal spacers. The second glass substrate is connected to the first glass substrate by the frame. The plurality of metal spacers are disposed between the first glass substrate and the second glass substrate. The plurality of metal spacers are made of an alloy whose thermal expansion coefficient is between 8×10−6 and 9×10−6, and the plurality of metal spacers are bonded to the first glass substrate and the second glass substrate by sealing glass.

Abstract: The present invention provides Chinese herbal compositions, ST 188L and method for prevention and treatment of cancers and infectious diseases. The Chinese herbal compositions comprise a formulation prepared ratably from a group of herbal plants consisting essentially of Ecchinops grijissii, Cirsium segetum Bge, Solanum indicum Linn, Lonicerae flos, and Zizyphi fructus. ST188L appeared to be activated in vivo to stimulate the activity of NK cells and LAK cells as shown by the increases in cytolytic activity of peripheral blood mononuclear cells isolated from volunteers after intake of ST 188L toward target cells, such as K562, Daudi, HepG2 and HBV transfected HepG2-2215 in a dose dependent manner. ST 188L has been proven to be effective on eradicating malignancy in a cancer patient by enhancing said patients' endogenous immune system to keep said patient cancer free for more than ten years.