Patents by Inventor YI-MING YEH

YI-MING YEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for physical vapor deposition and method for forming a layer
    Patent number: 12191127
    Abstract: An apparatus for PVD is provided. The apparatus includes a chamber, a pedestal disposed in the chamber to accommodate a wafer, and a ring. The ring includes a ring body having a first top surface and a second top surface, and a barrier structure disposed between the first top surface and the second top surface. The barrier structure can further include at least a first portion and a second portion separated from each other. The second vertical distance is equal to or greater than the first vertical distance.
    Type: Grant
    Filed: October 15, 2019
    Date of Patent: January 7, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hsin-Liang Chen, Wen-Chih Wang, Chia-Hung Liao, Cheng-Chieh Chen, Yi-Ming Yeh, Hung-Ting Lin, Yung-Yao Lee
  • METHOD FOR FORMING LAYER
    Publication number: 20220344133
    Abstract: A method for forming a layer includes following operations. A workpiece is received in an apparatus for deposition. The apparatus for deposition includes a chamber, a pedestal disposed in the chamber to accommodate the workpiece, and a ring disposed on the pedestal. The ring includes a ring body having a first top surface and a second top surface and a barrier structure disposed between the first top surface and the second top surface. A vertical distance is defined by a top surface of the barrier structure and a top surface of the workpiece. The vertical distance is between approximately 0 mm and approximately 50 mm. A target disposed in the apparatus for deposition is sputtered. A sputtered material is deposited onto a top surface of the workpiece to form a layer. The barrier structure alters an electrical density distribution during the depositing the sputter material.
    Type: Application
    Filed: July 12, 2022
    Publication date: October 27, 2022
    Inventors: HSIN-LIANG CHEN, WEN-CHIH WANG, CHIA-HUNG LIAO, CHENG-CHIEH CHEN, YI-MING YEH, HUNG-TING LIN, YUNG-YAO LEE
  • APPARATUS FOR PHYSICAL VAPOR DEPOSITION AND METHOD FOR FORMING A LAYER
    Publication number: 20200161100
    Abstract: An apparatus for PVD is provided. The apparatus includes a chamber, a pedestal disposed in the chamber to accommodate a wafer, and a ring. The ring includes a ring body having a first top surface and a second top surface, and a barrier structure disposed between the first top surface and the second top surface. The barrier structure can further include at least a first portion and a second portion separated from each other. The second vertical distance is equal to or greater than the first vertical distance.
    Type: Application
    Filed: October 15, 2019
    Publication date: May 21, 2020
    Inventors: HSIN-LIANG CHEN, WEN-CHIH WANG, CHIA-HUNG LIAO, CHENG-CHIEH CHEN, YI-MING YEH, HUNG-TING LIN, YUNG-YAO LEE