Patents by Inventor Yi-Pei TSAI

Yi-Pei TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Micro detector
    Patent number: 11335609
    Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The antenna layer is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the antenna layer is contacted with an external energy source, and the induced charge is stored in the floating gate.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: May 17, 2022
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Burn-Jeng Lin, Chrong-Jung Lin, Ya-Chin King, Yi-Pei Tsai
  • DEFECT MEASUREMENT METHOD
    Publication number: 20210159129
    Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The antenna layer is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the antenna layer is contacted with an external energy source, and the induced charge is stored in the floating gate.
    Type: Application
    Filed: January 6, 2021
    Publication date: May 27, 2021
    Inventors: Burn-Jeng LIN, Chrong-Jung LIN, Ya-Chin KING, Yi-Pei TSAI
  • MICRO DETECTOR AND DEFECT MEASUREMENT METHOD
    Publication number: 20200321255
    Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The antenna layer is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the antenna layer is contacted with an external energy source, and the induced charge is stored in the floating gate.
    Type: Application
    Filed: September 26, 2019
    Publication date: October 8, 2020
    Inventors: Burn-Jeng LIN, Chrong-Jung LIN, Ya-Chin KING, Yi-Pei TSAI