Abstract: A method for fabricating a conductive layer is provided. First, a substrate is provided and a patterned adhesion layer is formed on the substrate. Next, a chemical plating process is performed to form a first metal layer on the patterned adhesion layer by placing the substrate in an electroplating solution and the electroplating solution is shocked. Thereafter, a second metal layer is formed on the first metal layer by performing a plating process.

Abstract: A method for fabricating a conductive layer is provided. First, a substrate is provided and a patterned adhesion layer is formed on the substrate. Next, a chemical plating process is performed to form a first metal layer on the patterned adhesion layer by placing the substrate in an electroplating solution and the electroplating solution is shocked. Thereafter, a second metal layer is formed on the first metal layer by performing a plating process.

Abstract: A thin film transistor and a fabrication method thereof are provided. First, a gate is formed on a substrate. Next, a gate insulating layer is formed to cover the gate and then a channel layer is formed on a portion of the gate insulating layer above the gate. Afterwards, a source and a drain are formed on the channel layer. The method of forming the gate includes forming a copper alloy layer containing nitrogen and a copper layer sequentially and then removing a portion of the copper alloy layer containing nitrogen and the copper layer. The source and the drain could be formed by the same fabrication method.

Abstract: An ink jet process includes: providing a substrate; performing a ink jet step for spraying a paste on the surface of the substrate; and performing an in-situ and partial heating process to directly heat the paste sprayed on the surface of the substrate and control the shape and location of the paste.