Abstract: A high efficiency vertical axis wind turbine (VAWT) comprising two counter-rotating rotors, each comprising a plurality of straight rotor blades. One rotor is placed on a first vertical axis and another rotor is placed on a second vertical axis. The first vertical axis and the second vertical axis are positioned on a support structure extending there between. The support structure, and the first vertical axis of rotation and second vertical axis of rotation, can rotate about an intermediate axis of rotation, which is placed at a midpoint between the first vertical axis of rotation and second vertical axis of rotation. An angled deflector is mounted to the frame at or about the intermediate axis of rotation. During operation, the vertex of the deflector is positioned toward oncoming wind. The deflector comprises two symmetrical deflecting surfaces that extend from the vertex to the rotors. One or more vortex generators are positioned on each deflecting surface.

Abstract: A semiconductor structure includes a substrate, a semiconductor fin connected to the substrate, an epitaxial layer disposed over the semiconductor fin, and a silicide feature over and in contact with the epitaxial layer. The epitaxial layer including silicon germanium (SiGe) and further includes gallium (Ga) in an upper portion of the epitaxial layer that is in contact with the silicide feature.

Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.

Abstract: Methods of manufacturing a semiconductor structure are provided. One of the methods includes the following operations. A substrate is received, and the substrate includes a first transistor with a first conductive region and a second transistor with a second conductive region, wherein the first transistor and the second transistor have different conductive types. A first laser anneal is performed on the first conductive region to repair lattice damage. An amorphization is performed on the first conductive region and the second conductive region to enhance silicide formation to a desired phase transformation in the subsequent operations. A pre-silicide layer is formed on the substrate after the amorphization. A thermal anneal is performed to the substrate to form a silicide layer from the pre-silicide layer. A second laser anneal is performed on the first conductive region and the second conductive region after the formation of the pre-silicide layer.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A cognitive conversation system that generates effective diagnostic questions is provided. The cognitive conversation system receives a set of currently known symptoms (or currently available answers to diagnostic questions) of a reported problem or fault. The system identifies (i) a set of possible root causes of the reported problem based on the currently known symptoms and (ii) probabilities for the set of possible root causes by using a bipartite graph data structure that links possible symptoms with possible root causes. Upon determining that at least one possible root cause has a probability that is higher than a threshold, the system presents an explanation or solution associated with the at least one possible root cause. Upon determining that none of the possible root causes in the set of possible root causes has a probability higher than the threshold, the system presents a question based on information entropy that is computed based on probabilities of the identified possible root causes.

Abstract: A method for manufacturing a semiconductor device includes forming a fin structure over a substrate and forming a first gate structure over a first portion of the fin structure. A first nitride layer is formed over a second portion of the fin structure. The first nitride layer is exposed to ultraviolet radiation. Source/drain regions are formed at the second portion of the fin structure.

Abstract: A computer-implemented method is presented for enabling hierarchical conversational policy learning for sales strategy planning. The method includes enabling a user to have a conversation with a robot via a conversation platform, employing a plan database to store general plans used in the conversation, employing an industry database to store a plurality of candidate plans pertaining to sales promotions, and employing a plan and policy optimizer to allow the robot to select and output an optimal plan from the plurality of candidate plans, the optimal plan determined by hierarchical reinforcement learning via a first learner and a second learner, the first leaner selecting the optimal plan and the second learner selecting an optimal action.

Abstract: Methods of manufacturing a semiconductor structure are provided. One of the methods includes: receiving a substrate including a first conductive region of a first transistor and a second conductive region of a second transistor, wherein the first transistor and the second transistor have different conductive types; performing an amorphization on the first conductive region and the second conductive region; performing an implantation over the first conductive region of the first transistor; forming a contact material layer over the first conductive region and the second conductive region; performing a thermal anneal on the first conductive region and the second conductive region; and performing a laser anneal on the first conductive region and the second conductive region.

Abstract: A method and structure for doping source and drain (S/D) regions of a PMOS and/or NMOS FinFET device are provided. In some embodiments, a method includes providing a substrate including a fin extending therefrom. In some examples, the fin includes a channel region, source/drain regions disposed adjacent to and on either side of the channel region, a gate structure disposed over the channel region, and a main spacer disposed on sidewalls of the gate structure. In some embodiments, contact openings are formed to provide access to the source/drain regions, where the forming the contact openings may etch a portion of the main spacer. After forming the contact openings, a spacer deposition and etch process may be performed. In some cases, after performing the spacer deposition and etch process, a silicide layer is formed over, and in contact with, the source/drain regions.

Abstract: A semiconductor device includes a field effect transistor (FET). The FET includes a channel region and a source/drain region disposed adjacent to the channel region. The FET also includes a gate electrode disposed over the channel region. The FET is an n-type FET and the channel region is made of Si. The source/drain region includes an epitaxial layer including Si1-x-yM1xM2y, where M1 is one or more of Ge and Sn, and M2 is one or more of P and As, and 0.01?x?0.1.

Abstract: A computer-implemented method, computer program product, and computer processing system are provided for generating inferences from a forest of predefined problem determination trees using a processor-based conversation platform. The method includes selecting a tree from among the forest of predefined problem determination trees, responsive to user utterances uttered during an inference generating session. The method further includes navigating the tree to allocate a relevant tree node to generate a problem diagnosis question or a problem resolution action by understanding the user utterances among common interaction patterns in problem diagnosis and problem resolution dialogs. The method also includes providing speech for uttering the problem diagnosis question or the problem resolution action to a user.

Abstract: A semiconductor test device for measuring a contact resistance includes: first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer; epitaxial layers formed on the upper portions of the first fin structures, respectively; first conductive layers formed on the epitaxial layers, respectively; a first contact layer disposed on the first conductive layers at a first point; a second contact layer disposed on the first conductive layers at a second point apart from the first point; a first pad coupled to the first contact layer via a first wiring; and a second pad coupled to the second contact layer via a second wiring. The semiconductor test device is configured to measure the contact resistance between the first contact layer and the first fin structures by applying a current between the first pad and the second pad.

Abstract: A method in a call information server for a two-way radio system includes accessing, by the server, group list information associating the plurality of subscriber units with one or more groups; receiving, at the server, updates related to presence information, availability information, and the group list information; and confirming, by the server, for each particular subscriber unit indicated in a particular group list as forming a particular group, the particular subscriber unit's participation in a particular group call to the particular group, as a function of the presence information, the availability information, and the group list information. A call information server and a two-way radio system are also disclosed.

Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.

Abstract: A method of forming a semiconductor device includes etching a substrate to form two first trenches separated by a fin; filling the two first trenches with an isolation layer; and depositing a dielectric layer over the fin and the isolation layer. The method further includes forming a second trench in the dielectric layer over a channel region of the semiconductor device, the second trench exposing the isolation layer. The method further includes etching the isolation layer through the second trench to expose an upper portion of the fin in the channel region of the semiconductor device, and forming a dummy gate in the second trench over the isolation layer and engaging the upper portion of the fin.

Abstract: An electronic device includes a processor and a memory. The processor obtains a group of original specification data of an ambient light sensor, obtains a group of testing data of the ambient light sensor, combines the group of original specification data with the group of testing data to obtain a group of combined data, and analyzes the group of combined data according to a source of the plurality of data and a corresponding wavelength of the plurality of data to obtain a spectral hand table and a channel distribution table of the ambient light sensor.

Abstract: Integrated circuits may have programmable logic circuitry and hard-coded circuitry. The hard-coded circuitry may include data circuitry, a processor, and memory. As the hard-coded circuitry has a limited capacity, a portion of the programmable logic circuitry may be configured using configuration data to serve as expanded soft-coded memory for the hard-coded processor. Instructions for controlling settings of the data circuitry may be stored on the hard-coded and soft-coded memory. An additional portion of the programmable logic circuitry may be configured using the configuration data to serve as a soft-coded processor that executes the instructions stored on the soft-coded memory. Use of the soft-coded processor and/or expanded soft-coded memory may allow for more advanced algorithms for initialization and calibration of the data circuitry than when only hard-coded memory is used and may allow for updated processor circuitry to be implemented.

Abstract: A method for manufacturing a semiconductor device comprises forming a first fin and a second fin on a first active region and a second active region of a semiconductor substrate, respectively. A first dummy gate is formed over the first fin and a second dummy gate is formed over the second fin, wherein the first dummy gate has a first gate width along a lengthwise direction of the first fin, the second dummy gate has a second gate width along the lengthwise direction of the second fin, the first gate width is different from the second gate width. At least one of the first dummy gate and the second dummy gate is removed. A ferroelectric layer is then formed over the semiconductor substrate, in which the first dummy gate and/or the second dummy gate is removed. At least one metal gate electrode is formed on the ferroelectric layer.

Abstract: Methods for forming semiconductor structures are provided. The method includes forming a fin structure over a substrate and forming a gate structure across the fin structure. The method further includes recessing the fin structure to form a recess and implanting dopants from the recess to form a doped region. The method further includes diffusing the dopants in the doped region to form an expanded doped region and forming a source/drain structure over the expanded doped region.