Abstract: An electronic device may include a stereoscopic display that is configured to display three-dimensional content for a viewer. The stereoscopic display may include a lenticular lens film with lenticular lenses that extend across the length of the display and may be referred to as a lenticular display. The lenticular display may have convex curvature. The lenticular display may include a color filter layer with color filters and an opaque masking layer. The color filter layer may be interposed between the lenticular lens film and an array of display pixels for the display. The color filter layer may mitigate ghost image artifacts and reflections of ambient light. Microlenses may be included between the lenticular lens film and the array of display pixels to improve the efficiency of the display. The display may include a Fresnel lens layer. The lenticular lens film may include lenticular lenses having different shapes.

Abstract: A planar volumetric device for quantifying and handling a body fluid sample is provided. The device has a planar main body, a body fluid sample flow path, an air pump and an air passage. The planar main body includes a first planar surface and a second planar surface. The body fluid sample flow path is disposed in the main body, and has a body fluid sample inlet, a middle junction and a body fluid sample outlet, wherein the middle junction and the body fluid sample outlet define therebetween a specific path segment, by which it is possible to externally observe to which extent the body fluid sample has filled up with the path segment. The air pump is configured to provide an operating air pressure. The air passage has a first end and a second end, wherein the first and the second ends are connected to the air pump and the middle junction respectively, and the specific path segment has a constant volume.

Abstract: Infrared spectrometer and method of performing infrared spectrometry.

Abstract: A map display method, apparatus, a storage medium, and an electronic apparatus are provided. The method includes determining a touch coordinate of a touch point of a touch action on a target map in a case that the touch action on the target map displayed on a touch display screen is detected; determining a rectangular area centered on the touch coordinate according to the touch coordinate, a first preset length, and a second preset length; and displaying an image included in the rectangular area in a target display area on the touch display screen.

Abstract: Methods and systems for process chamber qualification for maintenance process endpoint detection are provided. Data collected by one or more sensors of a process chamber of a manufacturing system is identified. The identified data is collected during performance of initial maintenance operation(s) of a maintenance process. A current state of the process chamber is determined, based on the identified data, after the performance of the initial maintenance operation(s) based on the identified data. In response to a determination that the current state does not satisfy one or more chamber maintenance criteria, a set of subsequent maintenance operations to be performed to cause the current state of the process chamber to satisfy the criteria is identified. Performance of the set of subsequent maintenance operations is initiated at the process chamber.

Abstract: The invention discloses a quasi-volumetric sensing system and method. Plural short-range order (SRO) units are configured on the carrier of a quasi-volumetric device, and arranged as an array, i.e. a long-range order (LRO) unit. Protrusions, configured on the SRO units, can modify the wettability of the carrier to control the liquid volume retained thereon so that the precise volume of the liquid sample or droplets are calculated. Based on the applied force on the LRO unit and the gradient of hydrophilicity-hydrophobicity on the surface, the redundant volume of the liquid sample is removed. Macromolecules, e.g. antibodies, complements, receptor proteins, aptamers, oligosaccharides or oligonucleotides, configured on the protrusions are coupled to specific molecules in the liquid sample or droplets so as to determine characteristics of the specific molecules. Therefore, the open chip device of the invention can be used to achieve the quasi-volumetric measurement and the analysis of specific molecules.

Abstract: A strip for an electronic device senses a liquid sample. The strip includes a substrate having a first surface, a plurality of protrusions disposed on the first surface, and each having a width, and a hydrophilic layer having a layer surface disposed on the first surface and the plurality of protrusions, and having a second surface opposite to the layer surface, whereby the liquid sample and the second surface have a contact angle therebetween ranging from 2 to 85 degrees when the liquid sample is disposed on the hydrophilic layer.

Abstract: A planar volumetric device for quantifying and handling a body fluid sample is provided. The device has a planar main body, a body fluid sample flow path, an air pump and an air passage. The planar main body includes a first planar surface and a second planar surface. The body fluid sample flow path is disposed in the main body, and has a body fluid sample inlet, a middle junction and a body fluid sample outlet, wherein the middle junction and the body fluid sample outlet define therebetween a specific path segment, by which it is possible to externally observe to which extent the body fluid sample has filled up with the path segment. The air pump is configured to provide an operating air pressure. The air passage has a first end and a second end, wherein the first and the second ends are connected to the air pump and the middle junction respectively, and the specific path segment has a constant volume.

Abstract: A method for collecting a body fluid sample of a person to be examined is provided. The method comprises steps of: providing a body fluid sample collecting device and a body fluid sample inspection device for collecting the body fluid sample according to a test sampling requirement, wherein the body fluid sample collecting device includes a body fluid sample collecting region having an open hydrophilic layer with a specific layer area, and configured for collecting a predetermined amount of the body fluid sample; from a body surface of the person to be examined, causing the body fluid sample to be collected onto the body fluid sample collecting region until the body fluid sample covers the hydrophilic layer completely; and receiving the body fluid sample from the body fluid collecting region to be inspected in the body fluid sample inspection device.

Abstract: Embodiments of the present invention are directed to techniques for providing an novel field effect transistor (FET) architecture that includes a center fin region and one or more vertically stacked nanosheets. In a non-limiting embodiment of the invention, a nanosheet stack is formed over a substrate. The nanosheet stack can include one or more first semiconductor layers and one or more first sacrificial layers. A trench is formed by removing a portion of the one or more first semiconductor layers and the one or more first sacrificial layers. The trench exposes a surface of a bottommost sacrificial layer of the one or more first sacrificial layers. The trench can be filled with one or more second semiconductor layers and one or more second sacrificial layers such that each of the one or more second semiconductor layers is in contact with a sidewall of one of the one or more first semiconductor layers.

Abstract: Embodiments of the present invention are directed to techniques for providing an novel field effect transistor (FET) architecture that includes a center fin region and one or more vertically stacked nanosheets. In a non-limiting embodiment of the invention, a non-planar channel region is formed having a first semiconductor layer, a second semiconductor layer, and a fin-shaped bridge layer between the first semiconductor layer and the second semiconductor layer. Forming the non-planar channel region can include forming a nanosheet stack over a substrate, forming a trench by removing a portion of the nanosheet stack, and forming a third semiconductor layer in the trench. Outer surfaces of the first semiconductor layer, the second semiconductor layer, and the fin-shaped bridge region define an effective channel width of the non-planar channel region.

Abstract: A method and apparatus for parallelization of data processing. The method including: parsing a data processing flow to split a write table sequence for the data processing flow; generating a plurality of instances of the data processing flow based at least in part on the split write table sequence; and scheduling the plurality of instances for parallelization of data processing.

Abstract: Embodiments of the present invention are directed to techniques for providing an novel field effect transistor (FET) architecture that includes a center fin region and one or more vertically stacked nanosheets. In a non-limiting embodiment of the invention, a non-planar channel region is formed having a first semiconductor layer, a second semiconductor layer, and a fin-shaped bridge layer between the first semiconductor layer and the second semiconductor layer. Forming the non-planar channel region can include forming a nanosheet stack over a substrate, forming a trench by removing a portion of the nanosheet stack, and forming a third semiconductor layer in the trench. Outer surfaces of the first semiconductor layer, the second semiconductor layer, and the fin-shaped bridge region define an effective channel width of the non-planar channel region.

Abstract: Embodiments of the present invention are directed to techniques for providing an novel field effect transistor (FET) architecture that includes a center fin region and one or more vertically stacked nanosheets. In a non-limiting embodiment of the invention, a nanosheet stack is formed over a substrate. The nanosheet stack can include one or more first semiconductor layers and one or more first sacrificial layers. A trench is formed by removing a portion of the one or more first semiconductor layers and the one or more first sacrificial layers. The trench exposes a surface of a bottommost sacrificial layer of the one or more first sacrificial layers. The trench can be filled with one or more second semiconductor layers and one or more second sacrificial layers such that each of the one or more second semiconductor layers is in contact with a sidewall of one of the one or more first semiconductor layers.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to faceted epitaxial source/drain regions and methods of manufacture. The structure includes: a gate structure over a substrate; an L-shaped sidewall spacer located on sidewalls of the gate structure and extending over the substrate adjacent to the gate structure; and faceted diffusion regions on the substrate, adjacent to the L-shaped sidewall spacer.

Abstract: The invention discloses a quasi-volumetric sensing system and method. Plural short-range order (SRO) units are configured on the carrier of a quasi-volumetric device, and arranged as an array, i.e. a long-range order (LRO) unit. Protrusions, configured on the SRO units, can modify the wettability of the carrier to control the liquid volume retained thereon so that the precise volume of the liquid sample or droplets are calculated. Based on the applied force on the LRO unit and the gradient of hydrophilicity-hydrophobicity on the surface, the redundant volume of the liquid sample is removed. Macromolecules, e.g. antibodies, complements, receptor proteins, aptamers, oligosaccharides or oligonucleotides, configured on the protrusions are coupled to specific molecules in the liquid sample or droplets so as to determine characteristics of the specific molecules. Therefore, the open chip device of the invention can be used to achieve the quasi-volumetric measurement and the analysis of specific molecules.

Abstract: One illustrative FinFET device disclosed herein includes a source/drain structure that, when viewed in a cross-section taken through the fin in a direction corresponding to the gate width (GW) direction of the device, comprises a perimeter and a bottom surface. The source/drain structure also has an axial length that extends in a direction corresponding to the gate length (GL) direction of the device. The device also includes a metal silicide material positioned on at least a portion of the perimeter of the source/drain structure for at least a portion of the axial length of the source/drain structure and on at least a portion of the bottom surface of the source/drain structure for at least a portion of the axial length of the source/drain structure.

Abstract: Device structures for a field-effect transistor and methods of forming a device structure for a field-effect transistor. A channel region is arranged laterally between a first source/drain region and a second source/drain region. The channel region includes a first semiconductor layer and a second semiconductor layer arranged over the first semiconductor layer. A gate structure is arranged over the second semiconductor layer of the channel region The first semiconductor layer is composed of a first semiconductor material having a first carrier mobility. The second semiconductor layer is composed of a second semiconductor material having a second carrier mobility that is greater than the first carrier mobility of the first semiconductor layer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to faceted epitaxial source/drain regions and methods of manufacture. The structure includes: a gate structure over a substrate; an L-shaped sidewall spacer located on sidewalls of the gate structure and extending over the substrate adjacent to the gate structure; and faceted diffusion regions on the substrate, adjacent to the L-shaped sidewall spacer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to cut margin structures and methods of manufacture. The method includes: forming a plurality of patterned hardmask stacks containing at least a semiconductor layer and a capping layer; removing a portion of a first patterned hardmask stack and a margin of an adjacent hardmask stack of the plurality of the patterned hardmask stacks; and selectively growing material on the margin of the adjacent hardmask stack.