Patents by Inventor Yi-Ren WANG

Yi-Ren WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210265557
    Abstract: In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.
    Type: Application
    Filed: May 13, 2021
    Publication date: August 26, 2021
    Inventors: Yi-Ren Wang, Hung-Hua Lin, Yuan-Chih Hsieh
  • Publication number: 20210214469
    Abstract: A rotary engine that generates electricity using differences in relative humidity. A water-responsive material expands and contracts as water evaporates which drives the rotation of two wheels. The rotary motion drives an electrical generator which produces electricity. In another embodiment, the water-responsive material is used to actuate an artificial muscle of a robotic device.
    Type: Application
    Filed: March 26, 2021
    Publication date: July 15, 2021
    Inventors: Xi Chen, Rein V. Ulijn, Zhi-Lun Liu, Yi-Ren Wang, Daniela Kroiss, Haozhen Wang
  • Patent number: 11050012
    Abstract: In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: June 29, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Ren Wang, Hung-Hua Lin, Yuan-Chih Hsieh
  • Patent number: 11040870
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: June 22, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuei-Sung Chang, Chun-Wen Cheng, Fei-Lung Lai, Shing-Chyang Pan, Yuan-Chih Hsieh, Yi-Ren Wang
  • Publication number: 20210183641
    Abstract: A layer stack is formed over a conductive material portion located on a substrate. The layer stack contains a first silicon oxide layer, a silicon nitride layer formed by chemical vapor deposition, and a second silicon oxide layer. A patterned etch mask layer including an opening is formed over the layer stack. A via cavity extending through the layer stack and down to the conductive material portion is formed by isotropically etching portions of the layer stack underlying the opening in the patterned etch mask layer using an isotropic etch process. A buffered oxide etch process may be used, in which the etch rate of the silicon nitride layer is less than, but is significant enough, compared to the etch rate of the first silicon oxide layer to provide tapered straight sidewalls on the silicon nitride layer. An optical device including a patterned layer stack can be provided.
    Type: Application
    Filed: December 16, 2019
    Publication date: June 17, 2021
    Inventors: Yi-Ren Wang, Yuan-Chih Hsieh
  • Publication number: 20210087055
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a capping structure over a device substrate. The device substrate includes a first microelectromechanical systems (MEMS) device and a second MEMS device laterally offset from the first MEMS device. The capping structure includes a first cavity overlying the first MEMS device and a second cavity overlying the second MEMS device. The first cavity has a first gas pressure and the second cavity has a second gas pressure different from the first cavity. An outgas layer abutting the first cavity. The outgas layer includes an outgas material having an outgas species. The outgas material is amorphous.
    Type: Application
    Filed: September 23, 2019
    Publication date: March 25, 2021
    Inventors: Yi-Ren Wang, Shing-Chyang Pan, Yuan-Chih Hsieh
  • Publication number: 20210024348
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.
    Type: Application
    Filed: July 25, 2019
    Publication date: January 28, 2021
    Inventors: Kuei-Sung Chang, Chun-Wen Cheng, Fei-Lung Lai, Shing-Chyang Pan, Yuan-Chih Hsieh, Yi-Ren Wang
  • Publication number: 20200313073
    Abstract: In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.
    Type: Application
    Filed: April 1, 2019
    Publication date: October 1, 2020
    Inventors: Yi-Ren Wang, Hung-Hua Lin, Yuan-Chih Hsieh
  • Publication number: 20190309735
    Abstract: A rotary engine that generates electricity using differences in relative humidity. A water-responsive material expands and contracts as water evaporates which drives the rotation of two wheels. The rotary motion drives an electrical generator which produces electricity. In another embodiment, the water-responsive material is used to actuate an artificial muscle of a robotic device.
    Type: Application
    Filed: April 5, 2019
    Publication date: October 10, 2019
    Inventors: Xi Chen, Zhi-Lun Liu, Mir Ahnaf Hussain, Zane Shatz, Rein V. Ulijn, Yi-Ren Wang, Daniela Kroiss, Haozhen Wang
  • Patent number: 10307461
    Abstract: Disclosed is a method of treating or preventing polycystic kidney disease (PKD) by administration of neutrophil geleatinase-associated lipocalin (Ngal) protein. Also, a transgenic non-human animal model is established to investigate the effect of overexpression of exogenous Ngal on PKD progression.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: June 4, 2019
    Assignee: NATIONAL TAIWAN NORMAL UNIVERSITY
    Inventors: Hsiu-Mei Hsieh, Yi-Ren Wang, Si-Tse Jiang, Wen-Yih Jeng, Yuan-Yow Chiou
  • Publication number: 20170182120
    Abstract: Disclosed is a method of treating or preventing polycystic kidney disease (PKD) by administration of neutrophil geleatinase-associated lipocalin (Ngal) protein. Also, a transgenic non-human animal model is established to investigate the effect of overexpression of exogenous Ngal on PKD progression.
    Type: Application
    Filed: July 27, 2016
    Publication date: June 29, 2017
    Inventors: Hsiu-Mei HSIEH, Yi-Ren WANG, Si-Tse JIANG, Wen-Yih JENG
  • Patent number: 8456101
    Abstract: A power system includes a switching circuit, a resonant tank, a feedback circuit, and controller circuitry. The switching circuit including a first switch and a second switch provides a first AC signal. The resonant tank coupled to the switching circuit receives the first AC signal and generating a second AC signal for powering a load. The feedback circuit coupled to the load monitors an electrical condition of the load and provides a feedback signal. The controller circuitry coupled to the converter controls the switching circuit according to the feedback signal so as to control the power to the load. The controller circuitry is integrated in a first die. The first switch is integrated in a second die, and the second switch is integrated in a third die. The first die, said second die and said third die are mounted on and electrically interconnected to a platform compatible with through-hole technology. The platform and the resonant tank are further assembled on a printed circuit board.
    Type: Grant
    Filed: April 9, 2010
    Date of Patent: June 4, 2013
    Assignee: O2Micro, Inc.
    Inventors: Yi-Ren Wang, Sheng-Tai Lee, Da Liu, Chuan-Chiung Kuo
  • Publication number: 20100264844
    Abstract: A power system includes a switching circuit, a resonant tank, a feedback circuit, and controller circuitry. The switching circuit including a first switch and a second switch provides a first AC signal. The resonant tank coupled to the switching circuit receives the first AC signal and generating a second AC signal for powering a load. The feedback circuit coupled to the load monitors an electrical condition of the load and provides a feedback signal. The controller circuitry coupled to the converter controls the switching circuit according to the feedback signal so as to control the power to the load. The controller circuitry is integrated in a first die. The first switch is integrated in a second die, and the second switch is integrated in a third die. The first die, said second die and said third die are mounted on and electrically interconnected to a platform compatible with through-hole technology. The platform and the resonant tank are further assembled on a printed circuit board.
    Type: Application
    Filed: April 9, 2010
    Publication date: October 21, 2010
    Inventors: Yi-Ren WANG, Sheng-Tai LEE, Da LIU, Chuan-Chiung KUO