Abstract: Disclosed is a slag discharging method in a process of producing ultra-low phosphorus steel, which relates to the technical field of iron and steel smelting, and in which molten steel is mixed with lime first to produce basic slag; then converting is performed with oxygen to increase the oxidizability of the basic slag; and a carbon-containing reducing agent is finally added, so that in the process that the carbon is oxidized to release a large amount of carbon monoxide gas, phosphates are captured, and the basic slag is rapidly foamed and overflows from the opening of the steel ladle, so that conditions are no longer available for rephosphorization. The slag discharging method is simple and convenient to operate, does not have high requirements on the equipment, has relatively good dephosphorization effect, and can be used to prepare an ultra-low phosphorus steel containing less than 0.003% phosphorus.

Abstract: A rotary engine that generates electricity using differences in relative humidity. A water-responsive material expands and contracts as water evaporates which drives the rotation of two wheels. The rotary motion drives an electrical generator which produces electricity. In another embodiment, the water-responsive material is used to actuate an artificial muscle of a robotic device.

Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

Abstract: A method includes recording a branch current and a terminal voltage of each of two parallel connected cells of a battery pack during the battery pack being switched from a charging or discharging state through a rest state to a balance state, to obtain an internal resistance of each cell, and an open-circuit voltage (OCV) and a state of charge (SOC) of the battery pack in the balance state, to obtain an OCV and a SOC of each cell just before the battery pack is switched to the rest state; and obtaining an aging differential index according to the SOC of each cell just before the battery pack is switched to the rest state, the branch current of each cell just after the battery pack is switched to the rest state, and a rated capacity of the battery pack, to determine a relative aging level of the two cells.

Abstract: Embodiments of the present disclosure provide an uplink access method, a base station, and user equipment. The method includes: sending, by a base station, N signals and N pieces of physical random access channel PRACH resource indication information, where N is an integer greater than or equal to 2; and receiving, by the base station, a random access preamble sequence of the user equipment on PRACH resources indicated by the N pieces of PRACH resource indication information. Based on the foregoing solution, a quantity of random access preamble sequences sent by the user equipment is reduced, and uplink access complexity is reduced.

Abstract: In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.

Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.

Abstract: A layer stack is formed over a conductive material portion located on a substrate. The layer stack contains a first silicon oxide layer, a silicon nitride layer formed by chemical vapor deposition, and a second silicon oxide layer. A patterned etch mask layer including an opening is formed over the layer stack. A via cavity extending through the layer stack and down to the conductive material portion is formed by isotropically etching portions of the layer stack underlying the opening in the patterned etch mask layer using an isotropic etch process. A buffered oxide etch process may be used, in which the etch rate of the silicon nitride layer is less than, but is significant enough, compared to the etch rate of the first silicon oxide layer to provide tapered straight sidewalls on the silicon nitride layer. An optical device including a patterned layer stack can be provided.

Abstract: The present invention relates to a preparation method for velpatasvir and a derivative thereof. Specifically, in the present invention, velpatasvir and the derivative thereof is prepared by means of an intermediate compound represented by the following formula (definitions of the groups are described in the specifications). By means of the method, byproducts are fewer, costs are low, and the method is applicable to industrial production of velpatasvir.

Abstract: A touch pad comprises a capacitive sensor for sensing a manipulation gesture; a light guiding plate arranged on the capacitive sensor; an identification layer having a pattern disposed on the light guiding plate; a filter layer disposed on the identification layer, the filter layer having a first filter region and a second filter region, wherein the first filter region and the second filter region do not overlap; and a light emitting module having a light emitting surface, wherein the light emitting module is disposed at the periphery of the light guiding plate; wherein the light emitting surface provides light to the light guiding plate; the light passes through the first filter region to be a first shade, and the light passes through the second filter region to be a second shade; the color of the first shade is different from the color of the second shade.

Abstract: A semiconductor device includes: a fin-shaped structure on the substrate; a shallow trench isolation (STI) around the fin-shaped structure; a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure; a second gate structure on the STI; and a third gate structure on the SDB structure, wherein a width of the third gate structure is greater than a width of the second gate structure.

Abstract: A pixel array substrate including a substrate, pixel structures, and transfer lines is provided. The pixel structures are disposed on the substrate. Each pixel structure includes a data line, a gate line, an active device, and a pixel electrode. The active device is electrically connected to the data line and the gate line. The pixel electrode is electrically connected to the active device. The pixel electrode defines alignment domains. The alignment domains have different alignment directions. The transfer lines are arranged in a first direction. Gate lines of the pixel structures are arranged in a second direction. The first direction and the second direction are interlaced. The transfer lines are electrically connected to the gate lines. The pixel structures include a first pixel structure. The transfer lines include a first transfer line. The first transfer line overlaps a boundary between the alignment domains of the first pixel structure.

Abstract: The present disclosure relates to the field of communications technologies, and discloses a resource indicating method, a device, and a system, so as to resolve a problem of resource indication for a control channel during communication in a beam manner. The method may include: sending, by a base station to user equipment by using higher layer signaling, indication information that indicates, to the user equipment, configuration information for receiving a first control channel; and receiving, by the user equipment, the indication information from the base station, and receiving, based on the configuration information indicated by the indication information, control information from the base station by using the first control channel.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a capping structure over a device substrate. The device substrate includes a first microelectromechanical systems (MEMS) device and a second MEMS device laterally offset from the first MEMS device. The capping structure includes a first cavity overlying the first MEMS device and a second cavity overlying the second MEMS device. The first cavity has a first gas pressure and the second cavity has a second gas pressure different from the first cavity. An outgas layer abutting the first cavity. The outgas layer includes an outgas material having an outgas species. The outgas material is amorphous.

Abstract: Disclosed are improved methods for the synthesis of N-(8-[2-hydroxybenzoyl]- amino) caprylic acid. Certain compounds have been found useful for preventing the formation of a colored impurity when included in an ester hydrolysis reaction. Conducting ester hydrolysis in anaerobic conditions has also been found to minimize the formation of the color impurity. Also disclosed are improved methods for synthesizing the sodium salt of N-(8-[2-hydroxybenzoyl]-amino) caprylic acid.

Abstract: A communication operation carried out by a base station is described herein. The operation includes generating first indication information. The first indication information indicates configuration information of a first resource. The operation further includes generating second indication information. The second indication information indicates a relationship between a second resource and the first resource to a terminal. The operation further includes sending the first indication information and the second indication information, so that the terminal determines its own receiving resource or sending resource. When the base station indicates the receiving resource or the sending resource of the terminal resource indication overheads can be reduced.

Abstract: A pixel array substrate including a substrate, data lines, gate lines, pixels, and transfer lines is provided. The data lines are disposed on the substrate and arranged in a first direction. The gate lines are disposed on the substrate and arranged in a second direction interlaced with the first direction. The pixels are disposed on the substrate, each of which includes an active device electrically connected to one of the data lines and one of the gate lines and a pixel electrode electrically connected to the active device. The transfer lines are arranged in the first direction and electrically connected to the gate lines, respectively. The pixels include first pixels. In a top view of the pixel array substrate, at least one of the pixel electrodes of the first pixels is partially overlapped with one of the transfer lines. A driving method of a pixel array substrate is also provided.

Abstract: A pixel array substrate including a substrate, data lines, gate lines, pixels, and transfer lines is provided. The data lines are disposed on the substrate and arranged in a first direction. The gate lines are disposed on the substrate and arranged in a second direction interlaced with the first direction. The pixels are disposed on the substrate, each of which includes an active device electrically connected to one of the data lines and one of the gate lines and a pixel electrode electrically connected to the active device. The transfer lines are arranged in the first direction and electrically connected to the gate lines, respectively. The pixels include first pixels. In a top view of the pixel array substrate, at least one of the pixel electrodes of the first pixels is partially overlapped with one of the transfer lines. A driving method of a pixel array substrate is also provided.

Abstract: A pixel array substrate including a substrate, data lines, gate lines, pixels, and transfer lines is provided. The data lines are disposed on the substrate and arranged in a first direction. The gate lines are disposed on the substrate and arranged in a second direction interlaced with the first direction. The pixels are disposed on the substrate, each of which includes an active device electrically connected to one of the data lines and one of the gate lines and a pixel electrode electrically connected to the active device. The transfer lines are arranged in the first direction and electrically connected to the gate lines, respectively. The pixels include first pixels. In a top view of the pixel array substrate, at least one of the pixel electrodes of the first pixels is partially overlapped with one of the transfer lines. A driving method of a pixel array substrate is also provided.

Abstract: A pixel array substrate including a substrate, data lines, gate lines, pixels, and transfer lines is provided. The data lines are disposed on the substrate and arranged in a first direction. The gate lines are disposed on the substrate and arranged in a second direction interlaced with the first direction. The pixels are disposed on the substrate, each of which includes an active device electrically connected to one of the data lines and one of the gate lines and a pixel electrode electrically connected to the active device. The transfer lines are arranged in the first direction and electrically connected to the gate lines, respectively. The pixels include first pixels. In a top view of the pixel array substrate, at least one of the pixel electrodes of the first pixels is partially overlapped with one of the transfer lines. A driving method of a pixel array substrate is also provided.