Abstract: A heterogeneous integration detecting method and a heterogeneous integration detecting apparatus are provided. The heterogeneous integration detecting method includes the following. Under the condition of maintaining the same relative distance between an interference objective lens and a sample, the relative posture of the interference objective lens and the sample is continuously adjusted according to the change of an image of the sample in the field of view of the interference objective lens until a first optical axis of the interference objective lens is determined to be substantially perpendicular to the surface of the sample according to the image. The interference objective lens is replaced with an imaging objective lens and the geometric profile of at least one via of the sample is detected. A second optical axis of the imaging objective lens after replacement overlaps with the first optical axis of the interference objective lens before replacement.

Abstract: A three-dimension measurement device includes a moving device, a projecting device, a surface-type image-capturing device and a processing device. The moving device carries an object, and moves the object to a plurality of positions. The projecting device generates a first light to the object. The surface-type image-capturing device senses a second light generated by the object in response to the first light to generate a phase image on each of the positions. The processing device is coupled to the surface-type image-capturing device and receives the phase images. The processing device performs a region-of-interest (ROI) operation for the phase images to generate a plurality of ROI images. The processing device performs a multi-step phase-shifting operation for the ROI images to calculate the surface height distribution of the object.

Abstract: A three-dimension measurement device includes a moving device, a projecting device, a surface-type image-capturing device and a processing device. The moving device carries an object, and moves the object to a plurality of positions. The projecting device generates a first light to the object. The surface-type image-capturing device senses a second light generated by the object in response to the first light to generate a phase image on each of the positions. The processing device is coupled to the surface-type image-capturing device and receives the phase images. The processing device performs a region-of-interest (ROI) operation for the phase images to generate a plurality of ROI images. The processing device performs a multi-step phase-shifting operation for the ROI images to calculate the surface height distribution of the object.

Abstract: A scattering measurement system is provided, including: a light source generator for generating a detection light beam with discontinuous multi-wavelengths, and generating a multi-order diffraction light beam with three-dimensional feature information when the detection light beam is incident on an object; a detector having a photosensitive array for receiving and converting the multi-order diffraction light beam into multi-order diffraction signals with the three-dimensional feature information; and a processing module for receiving the multi-order diffraction signals and comparing the multi-order diffraction signals with multi-order diffraction feature patterns in a database so as to analyze the three-dimensional feature information of the object.

Abstract: A measurement system is configured to measure a surface structure of a sample. The surface of the sample has a thin film and a via, the depth of the via is larger than the thickness of the thin film. The measurement system includes a light source, a first light splitter, a first aperture stop, a lens assembly, a second aperture stop, a spectrum analyzer and an analysis module. The first light splitter disposed in the light emitting direction of the light source. The first aperture stop disposed between the light source and the first light splitter. The lens assembly is disposed between the first light splitter and the sample. The second aperture stop is disposed between the lens assembly and the first light splitter. The spectrum analyzer is disposed to at a side of the first light splitter opposite to the sample.

Abstract: A measurement system is configured to measure a surface structure of a sample. The surface of the sample has a thin film and a via, the depth of the via is larger than the thickness of the thin film. The measurement system includes a light source, a first light splitter, a first aperture stop, a lens assembly, a second aperture stop, a spectrum analyzer and an analysis module. The first light splitter disposed in the light emitting direction of the light source. The first aperture stop disposed between the light source and the first light splitter. The lens assembly is disposed between the first light splitter and the sample. The second aperture stop is disposed between the lens assembly and the first light splitter. The spectrum analyzer is disposed to at a side of the first light splitter opposite to the sample.

Abstract: A scattering measurement system is provided, including: a light source generator for generating a detection light beam with discontinuous multi-wavelengths, and generating a multi-order diffraction light beam with three-dimensional feature information when the detection light beam is incident on an object; a detector having a photosensitive array for receiving and converting the multi-order diffraction light beam into multi-order diffraction signals with the three-dimensional feature information; and a processing module for receiving the multi-order diffraction signals and comparing the multi-order diffraction signals with multi-order diffraction feature patterns in a database so as to analyze the three-dimensional feature information of the object.

Abstract: A scattering measurement system is provided, including: a light source generator for generating a detection light beam with multi-wavelengths, wherein the detection light beam is incident on an object so as to generate a plurality of multi-order diffraction light beams with three-dimensional feature information; a spatial filter for filtering out zero-order light beams from the plurality of multi-order diffraction light beams; and a detector having a photosensitive array for receiving the plurality of multi-order diffraction light beams filtered out by the spatial filter and converting the filtered plurality of multi-order diffraction light beams into multi-order diffraction signals with the three-dimensional feature information. As such, the three-dimensional structure of the object can be obtained by comparing the multi-order diffraction signals with a database.

Abstract: According to one embodiment of a method for measuring a stacking overlay error, the method may use a differential interference contrast microscope system to measure a stacking overlay mark and focus on one overlay mark of a lower layer overlay mark and an upper layer overlay mark when measuring the stacking overlay mark. Then, the method uses an image analysis scheme to obtain an image of the stacking overlay mark from a photo-detector and obtains a first reference position of the lower layer overlay mark in a direction and a second reference position of the upper layer overlay mark in the direction from the image; and computes the stacking overlay error in the direction according to the first and the second reference positions.

Abstract: In a thickness measuring system for a bonding layer according to an exemplary embodiment, an optical element changes the wavelength of a first light source to enable at least one second light source propagating through a bonding layer to be incident to an object, wherein the bonding layer has an upper interface and a lower interface that are attached to the object; and an optical image capturing and analysis unit receives a plurality of reflected lights from the upper and the lower interfaces to capture a plurality of interference images of different wavelengths, and analyzes the intensity of the plurality of interference images to compute the thickness information of the bonding layer.

Abstract: A measurement system is provided to measure a hole of a target, including a light source generation unit, a capturing unit and a processing unit. The light source generation unit generates a light source and focuses the light source on a plurality of different height planes. The capturing unit captures a plurality of images scattered from the plurality of different height planes. The processing unit obtains boundaries of the hole on the plurality of different height planes according to the plurality of images, samples image intensities of different azimuth angles on the boundaries of the hole on each of the plurality of different height planes to generate a plurality of sampling values, and develops a sidewall image of the hole according to the plurality of sampling values, the plurality of different height planes and the different azimuth angles.

Abstract: According to one embodiment of a method for measuring a stacking overlay error, the method may use a differential interference contrast microscope system to measure a stacking overlay mark and focus on one overlay mark of a lower layer overlay mark and an upper layer overlay mark when measuring the stacking overlay mark. Then, the method uses an image analysis scheme to obtain an image of the stacking overlay mark from a photo-detector and obtains a first reference position of the lower layer overlay mark in a direction and a second reference position of the upper layer overlay mark in the direction from the image; and computes the stacking overlay error in the direction according to the first and the second reference positions.

Abstract: A system for through silicon via (TSV) structure measurement comprises a reflectometer, and a computing unit. The reflectometer emits a broadband light beam to at least a TSV structure and receives a reflection spectrum of at least a TSV structure. The computing unit is coupled with the reflectometer and determines the depth of the TSV structure in accordance with the reflection spectrum.

Abstract: A measurement system is provided to measure a hole of a target, including a light source generation unit, a capturing unit and a processing unit. The light source generation unit generates a light source and focuses the light source on a plurality of different height planes. The capturing unit captures a plurality of images scattered from the plurality of different height planes. The processing unit obtains boundaries of the hole on the plurality of different height planes according to the plurality of images, samples image intensities of different azimuth angles on the boundaries of the hole on each of the plurality of different height planes to generate a plurality of sampling values, and develops a sidewall image of the hole according to the plurality of sampling values, the plurality of different height planes and the different azimuth angles.

Abstract: A method for measuring a via bottom profile is disclosed for obtaining a profile of a bottom of a via in a front side of a substrate. In this method, an infrared (IR) light source is transmitted from the back of the substrate to the bottom of the via through an objective by using an IR-microscope, and lights scattered from the bottom of the via are acquired by an image capturing device to generate an image, where the image displays a diameter (2Ea) of the via bottom profile and a diameter (2Ec) of a maximum receivable base area of the via for the IR-microscope. Thereafter, by using an elliptic equation, a minor axis radius thereof (Eb) is obtained, and thus the via bottom profile is obtained from a radius (Ea) of the via bottom profile and the minor axis radius (Eb) of the elliptic equation.

Abstract: A method for designing an overlay target comprises selecting a plurality of overlay target pairs having different overlay errors or offsets, calculating a deviation of the simulated diffraction spectrum for each overlay target pair, selecting a plurality of sensitive overlay target pairs by taking the deviation of the simulated diffraction spectrum into consideration, selecting an objective overlay target pair from the sensitive overlay target pairs by taking the influence of the structural parameters to the simulated diffraction spectrum into consideration, and designing the overlay target pair based on the structural parameter of the objective overlay target pair.

Abstract: The present invention provides a scatterfield microscopical measuring method and apparatus, which combine scatterfield detecting technology into microscopical device so that the microscopical device is capable of measuring the sample whose dimension is under the limit of optical diffraction. The scatterfield microscopical measuring apparatus is capable of being controlled to focus uniform and collimated light beam on back focal plane of an objective lens disposed above the sample. By changing the position of the focus position on the back focal plane, it is capable of being adjusted to change the incident angle with respect to the sample.

Abstract: A method for designing a two-dimensional array overlay target comprises the steps of: selecting a plurality of two dimensional array overlay targets having different overlay errors; calculating a deviation of a simulated diffraction spectrum for each two-dimensional array overlay target; selecting an error-independent overlay target by taking the deviations of the simulated diffraction spectra into consideration; and designing a two dimensional array overlay target based on structural parameters of the error-independent overlay target.

Abstract: A thin metal film measurement method is disclosed. The method includes the following steps. A respective capacitance is measured before and after a thin metal film is formed. The thickness of the thin metal film is calculated according to the variation of the capacitance. In an embodiment, the capacitance is measured respectively by a capacitance measuring module before and after the thin metal film is formed so as to calculate the thickness of the thin metal film. In another embodiment, a pair of capacitance measuring modules opposite at up and down sides is applied to measure the capacitance before and after the thin metal film is formed so as to calculate the thickness of the thin metal film.

Abstract: A method for designing a two-dimensional array overlay target set comprises the steps of: selecting a plurality of two-dimensional array overlay target sets having different overlay errors; calculating a deviation of a simulated diffraction spectra for each two-dimensional array overlay target set; selecting a sensitive overlay target set by taking the deviations of the simulated diffraction spectra into consideration; and designing a two-dimensional array overlay target set based on the structural parameters of the sensitive overlay target set.