Patents by Inventor Yi-Shao Lin

Yi-Shao Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942556
    Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Ru Lin, Shu-Han Chen, Yi-Shao Li, Chun-Heng Chen, Chi On Chui
  • Publication number: 20200164482
    Abstract: Described herein are multi-layered windows for use in chemical-mechanical planarization (CMP) systems and CMP processes. The multi-layered windows of the present disclosure include a transparent structural layer and a hydrophilic surfactant applied to at least a portion of at least one surface of the transparent structural layer. Such multi-layered windows may be in the polishing pad, the platen, or both.
    Type: Application
    Filed: September 3, 2019
    Publication date: May 28, 2020
    Inventors: Shih-Chung Chen, Yi-Shao Lin, Sheng-Tai Peng, Ya-Jen Sheuh, Hung-Lin Chen, Ren-Dou Lee