Patents by Inventor Yisheng Chai

Yisheng Chai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electromagnetic conversion device and information memory comprising the same
    Patent number: 10062834
    Abstract: The present invention provides an electromagnetic conversion device, comprising: an intermediate layer and electrode layers located on both sides of the intermediate layer, wherein the intermediate layer is a magnetoelectric layer. The electromagnetic conversion device realizes the direct conversion of charge and magnetic flux, and thus can be used as a fourth fundamental circuit element, so as to provide a new degree of freedom for the design of electronic circuits and information function devices. In addition, the electromagnetic conversion device can be used as memory elements to form a nonvolatile magnetoelectric information memory.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: August 28, 2018
    Assignee: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Yang Sun, Yisheng Chai, Dashan Shang
  • ELECTROMAGNETIC CONVERSION DEVICE AND INFORMATION MEMORY COMPRISING THE SAME
    Publication number: 20180026177
    Abstract: The present invention provides an electromagnetic conversion device, comprising: an intermediate layer and electrode layers located on both sides of the intermediate layer, wherein the intermediate layer is a magnetoelectric layer. The electromagnetic conversion device realizes the direct conversion of charge and magnetic flux, and thus can be used as a fourth fundamental circuit element, so as to provide a new degree of freedom for the design of electronic circuits and information function devices. In addition, the electromagnetic conversion device can be used as memory elements to form a nonvolatile magnetoelectric information memory.
    Type: Application
    Filed: January 20, 2016
    Publication date: January 25, 2018
    Applicant: Institute of Physics, Chinese Academy of Sciences
    Inventors: Yang Sun, Yisheng Chai, Dashan Shang
  • Multiferroic material and method of manufacturing the same
    Patent number: 8597533
    Abstract: The present invention relates to a multiferroic material capable of freely controlling magnetic field size at room temperature, and to a method of manufacturing the same. Said multiferroic material includes hexaferrites containing magnetic iron ions partially substituted by non-magnetic ions. Said non-magnetic ions act to change the magnetic anisotropy of said hexaferrites.
    Type: Grant
    Filed: October 1, 2009
    Date of Patent: December 3, 2013
    Assignee: SNU R&DB Foundation
    Inventors: Kee-Hoon Kim, Yisheng Chai, Sae-Hwan Chun
  • MULTIFERROIC MATERIAL AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20110031434
    Abstract: The present invention relates to a multiferroic material capable of freely controlling magnetic field size at room temperature, and to a method of manufacturing the same. Said multiferroic material includes hexaferrites containing magnetic iron ions partially substituted by non-magnetic ions. Said non-magnetic ions act to change the magnetic anisotropy of said hexaferrites.
    Type: Application
    Filed: October 1, 2009
    Publication date: February 10, 2011
    Applicant: SNU R&DB FOUNDATION
    Inventors: Kee-Hoon Kim, Yisheng Chai, Sae-Hwan Chun