Abstract: A light emitting apparatus has light emitting units. The light emitting units can be respectively provided with current densities, so that the light emitted by each of the light emitting unit has a light intensity, wherein the current densities are different from each other, or partial of the current densities are different from each other. A number of the light emitting units can be larger than or equal to four, all of the four lighting frequencies of the four light emitting units are different from each other, or partial of the four lighting frequencies of the four light emitting units are identical to each other, and the light emitting apparatus and the object under test rotate relative to each other. A light emitting method, a spectrum detection method and a lighting correction method are also illustrated for increasing SNR, correcting the light intensity or the spectrum signal.

Abstract: An optical analysis system and an optical analysis method, which simply change driving electric currents of light-emitting units via using a control and process unit, so that a wavelength range and a peak wavelength of an irradiated light generated by each light-emitting unit may be fine-tuned. A plurality of irradiating lights with different wavelength ranges and peak wavelengths are irradiated to the object to be tested in different times, so that merely fewer light-emitting units may be used to improve a detection resolution and a detection accuracy of a spectrum of the object to be tested.

Abstract: A light emitting apparatus has light emitting units. The light emitting units can be respectively provided with current densities, so that the light emitted by each of the light emitting unit has a light intensity, wherein the current densities are different from each other, or partial of the current densities are different from each other. A number of the light emitting units can be larger than or equal to four, all of the four lighting frequencies of the four light emitting units are different from each other, or partial of the four lighting frequencies of the four light emitting units are identical to each other, and the light emitting apparatus and the object under test rotate relative to each other. A light emitting method, a spectrum detection method and a lighting correction method are also illustrated for increasing SNR, correcting the light intensity or the spectrum signal.

Abstract: A composition analyzer has an accommodating device, an optical detection device, a driving device and a support part. The accommodating device accommodates an object to be analyzed, and has an accommodating space, a transparent plate and a rotating part, wherein the transparent plate is disposed on one of two opposite sides of the accommodating space, the rotating part is disposed on the accommodating device. The optical detection device has a solid state light source emitter and a light receiver, wherein another one of the two opposite side of the accommodating space is disposed with one of another one transparent plate, a light reflection plate and a non-transparent plate. The driving device is connected to the rotating part. The support part is pivotally connected to the rotating part. The accommodating device rotates in the YZ plane, which can perform uniform and repeated measurements to analyze content of grains.

Abstract: A light emitting apparatus has a plurality of light emitting units, and each of them emits a light with a light emission peak wavelength and a wavelength range. The wavelength ranges of the two light emitting units with the two adjacent light emission peak wavelengths are partially overlapped or non-overlapped. Each of the light emitting units discontinuously emits a light with a lighting frequency. The present disclosure further provides the spectrometer, a light emitting method and a spectrum detection method, and all of them utilizes the light emitting apparatus, a background noise is discarded and a frequency domain signal of an optical spectrum signal of a tested object is reserved, so as to have a filtering effect and achieve high test accuracy, which can replace conventional spectrometer for wavelength resolution characteristics.

Abstract: A light emitting apparatus has a plurality of light emitting units, and each of them emits a light with a light emission peak wavelength and a wavelength range. The wavelength ranges of the two light emitting units with the two adjacent light emission peak wavelengths are partially overlapped or non-overlapped. Each of the light emitting units discontinuously emits a light with a lighting frequency. The present disclosure further provides the spectrometer, a light emitting method and a spectrum detection method, and all of them utilizes the light emitting apparatus, a background noise is discarded and a frequency domain signal of an optical spectrum signal of a tested object is reserved, so as to have a filtering effect and achieve high test accuracy, which can replace conventional spectrometer for wavelength resolution characteristics.

Abstract: A method of manufacturing an oxynitride phosphor is revealed. A precursor is sintered under 0.1-1000 MPa nitrogen pressure for synthesis of an oxynitride phosphor. The general formula of the oxynitride phosphors is Ba3-XSi6O12N2:EuxBa3-XSi6O6N6:Eux or Ba3-XSi6O9N4:Eux (0.00001?x?5; 0.00001). Thus pure phosphor can be mass-produced.

Abstract: A method for manufacturing light emitting device is provided. Firstly, provide a substrate. Then arrange a light emitting unit on the substrate. Next form at least one electrode and arrange at least one protective layer on the electrode. The protective layer is to prevent a phosphor layer following formed on the light emitting unit from covering the electrode. After forming the phosphor layer, flatten the phosphor layer and the protective layer. A part of the phosphor layer over the protective layer is removed. Thus the electrode is not affected by the phosphor layer and conductivity of the electrode is improved to resolve phosphor thickness and uniformity problems of the light emitting device. Therefore, the thickness of the light emitting device with LED is effectively reduced and stability of white color temperature control is significantly improved.

Abstract: A method of manufacturing an oxynitride phosphor is revealed. A precursor is sintered under 0.1-1000 MPa nitrogen pressure for synthesis of an oxynitride phosphor. The general formula of the oxynitride phosphors is MxAyBzOuNv (0.00001?x?5; 0.00001?y?3; 0.00001?z?6; 0.00001?u?12; 0.00001?v?12). M is an activator or a mixture of activators. A is a bivalent element or a mixture of bivalent elements. B is a trivalent element, a tetravalent element, a mixture of trivalent elements or a mixture of tetravalent elements. O is a univalent element, a bivalent element, a mixture of univalent elements, or a mixture of bivalent elements. N is a univalent element, a bivalent element, a trivalent element, a mixture of univalent elements, a mixture of bivalent elements, or a mixture of trivalent elements. Thus pure phosphor can be mass-produced.

Abstract: An oxynitride phosphor and a method of manufacturing the same are revealed. The formula of the oxynitride phosphor is Ba3-xSi6O12N2: Yx (0?x?1). Y is praseodymium (Pr) or terbium (Tb) used as a luminescent center. The oxynitride phosphor is synthesized by solid-state reaction. The oxynitride phosphor is excited by vacuum ultraviolet light with a wavelength range of 130 nm to 300 nm or ultraviolet to visible light with a wavelength range of 300 nm to 550 nm to emit light with a wavelength range of 400 nm to 700 nm. Moreover, the full-width at half-maximum of the emission spectrum is smaller than 30 nm. Thus the oxynitride phosphor is suitable for applications of backlights, plasma display panels and ultraviolet excitation. The oxynitride phosphor has higher application value.

Abstract: An oxynitride phosphor and a method of manufacturing the same are revealed. The formula of the oxynitride phosphor is Ba3-x-ySi6O12N2:Cey, Eux (0?x?1, 0?y?1). Europium (Eu) and cerium (Ce) are luminescent centers. The oxynitride phosphor is synthesized by solid-state reaction. The oxynitride phosphor is excited by vacuum ultraviolet light with a wavelength range of 130 nm to 300 nm or ultraviolet to visible light with a wavelength range of 350 nm to 550 nm. The emission wavelength of the oxynitride phosphor is ranging from 400 nm to 700 nm. Thus the oxynitride phosphor can be applied to plasma display panels and ultraviolet (UV) excitation sources. The energy transfer occurs between Ce and Eu of the oxynitride phosphor and the oxynitride phosphor has a blue light emission peak and a green light emission peak. Thus color rendering index of the oxynitride phosphor is improved.

Abstract: Abstract of Disclosure A light emitting diode includes a substrate, an N-doped layer disposed on the substrate, a plurality of cathodes disposed between the N-doped layer and the substrate, an active layer disposed on the N-doped layer, a P-doped layer disposed on the active layer, and a plurality of anodes disposed on the P-doped layer. The cathodes are electrically connected to the N-doped layer, and the patterns of the cathodes are disconnected from each other. The anodes are electrically connected to the P-doped layer, and the patterns of the anodes are disconnected from each other. Each cathode and a corresponding anode form a loop, and each loop is an independent loop.

Abstract: A light emitting diode includes a substrate, an N-doped layer disposed on the substrate, a plurality of cathodes disposed between the N-doped layer and the substrate, an active layer disposed on the N-doped layer, a P-doped layer disposed on the active layer, and a plurality of anodes disposed on the P-doped layer. The cathodes are electrically connected to the N-doped layer, and the patterns of the cathodes are disconnected from each other. The anodes are electrically connected to the P-doped layer, and the patterns of the anodes are disconnected from each other. Each cathode and a corresponding anode form a loop, and each loop is an independent loop.

Abstract: The present invention provides an alternating current light-emitting diode (AC LED), which uses a light compensation layer disposed on the light-emitting surface of the AC LED. The materials of the light compensation layer can be phosphorescent or fluorescent materials. The light-emitting mechanism is mainly the light-emitting mechanism of electron-hole pairs in a triplet state. By absorbing light of the AC LED, the flashes occurred when the power of the AC LED alters from a positive half-cycle to a negative one can be compensated. Thereby, the AC LED can emit light full-timely.

Abstract: A method for manufacturing light emitting device is revealed. Firstly, provide a substrate. Then arrange a light emitting unit on the substrate. Next form at least one electrode and arrange at least one protective layer on the electrode. The protective layer is to prevent a phosphor layer following formed on the light emitting unit from covering the electrode. After forming the phosphor layer, flatten the phosphor layer and the protective layer. That means to remove part of the phosphor layer over the protective layer and the protective layer. Thus the electrode is not affected by the phosphor layer and conductivity of the electrode is improved to resolve phosphor thickness and uniformity problems of the light emitting device. Therefore, the thickness of the light emitting device with LED is effectively reduced and stability of white color temperature control is significantly improved.

Abstract: The present invention provides a light emitting element comprising a first substrate, a light emitting unit disposed on the first substrate, at least a selective reflection layer disposed on an emitting side of the light emitting unit so that a light of a first color emitted from the light emitting unit passes through the selective reflection layer, and a fluorescent layer disposed on the emitting side of the light emitting unit and converting the light of the first color passing therethrough into a light of a second color, wherein a light of a mixed color is formed by the lights of the first and second color and only the light of the second color is reflected by the selective reflection layer.

Abstract: A light emitting device with selective reflection function being applied to general light emitting device and AC-type light emitting device is revealed. The light emitting device includes at least one vertical light emitting unit, at least one selective reflection layer and a phosphor layer. The selective reflection layer is disposed over the vertical light emitting unit and the phosphor layer is arranged over the selective reflection layer. Thus first colored light from the vertical light emitting unit passes the selective reflection layer and then to be converted into second colored light by the phosphor layer. The selective reflection layer reflects the second colored light while the first colored light is mixed with the second colored light to form mixing colored light. By the selective reflection layer that prevents the second colored light emitting into the light emitting unit, the lighting efficiency of the light emitting device is enhanced.

Abstract: A nitride based semiconductor light emitting device is revealed. The light emitting device includes a light emitting epitaxial layer, a P-type electrode and a N-type electrode. The P-type electrode and the N-type electrode are disposed on the light emitting epitaxial layer. The light emitting device features on that the N-type electrode is arranged on the inner side of the P-type electrode. The P-type electrode extends toward the N-type electrode along the edge of the light emitting epitaxial layer and the N-type electrode extends inward along the inner side of the P-type electrode. By means of the electrode pattern with special design, the light emitting area of the light emitting device is increased.