Patents by Inventor YI-SHIN YE

YI-SHIN YE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial Structure and Growth Method of Group-III Nitrides
    Publication number: 20160153119
    Abstract: A Group-III nitrides epitaxial structure includes a Si substrate, and a Group-III nitrides layer disposed over the Si substrate, wherein an interface structure of “coexistence of Al atoms and SixNy” between the Si substrate and the Group-III nitrides. Al atoms are configured to be absorbed to the Si substrate and connect the Group-III nitrides; and SixNy are configured to release mismatch stress caused by heteroepitaxy. A fabricating method comprises: (1) providing a Si substrate; (2) forming an interface structure over a surface of the Si substrate , wherein the interface structure is arranged with both Al atoms and SixNy, which are then cladded by an AlN epitaxial layer; and (3) growing Group-III nitrides over the interface structure wherein the Al atoms are configured to be absorbed to the Si substrate and connect the Group-III nitrides and the SixNy is configured to release mismatch stress generated by heteroepitaxy.
    Type: Application
    Filed: February 4, 2016
    Publication date: June 2, 2016
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: YANHAO DU, MENG-HSIN YEH, CHEN-KE HSU, CHIH-WEI CHAO, WENYU LIN, YI-SHIN YE, JEN-CHUN YANG, JIANMING LIU