Abstract: A method for the preparation of graphene is provided, which includes: (a) oxidizing a graphite material to form graphite oxide; (b) dispersing graphite oxide into water to form an aqueous suspension of graphite oxide; (c) adding a dispersing agent to the aqueous suspension of graphite oxide; and (d) adding an acidic reducing agent to the aqueous suspension of graphite oxide, wherein graphite oxide is reduced to graphene by the acidic reducing agent, and graphene is further bonded with the dispersing agent to form a graphene dispersion containing a surface-modified graphene. The present invention provides a method for the preparation of graphene using an acidic reducing agent. The obtained graphene can be homogeneously dispersed in water, an acidic solution, a basic solution, or an organic solution.

Abstract: A method for the preparation of graphene is provided, which includes: (a) oxidizing a graphite material to form graphite oxide; (b) dispersing graphite oxide into water to form an aqueous suspension of graphite oxide; (c) adding a dispersing agent to the aqueous suspension of graphite oxide; and (d) adding an acidic reducing agent to the aqueous suspension of graphite oxide, wherein graphite oxide is reduced to graphene by the acidic reducing agent, and graphene is further bonded with the dispersing agent to form a graphene dispersion containing a surface-modified graphene. The present invention provides a method for the preparation of graphene using an acidic reducing agent. The obtained graphene can be homogeneously dispersed in water, an acidic solution, a basic solution, or an organic solution.

Abstract: An exemplary apparatus and method for producing a hyperthermal beam is provided. An apparatus may comprise a plasma discharge source, an emission system, and a magnetic source. The plasma discharge source may be configured to receive an elemental source, generate plasma based on the elemental source, and generate one or more neutral atoms of the elemental source. The emission system may be configured to emit a hyperthermal beam, comprising the one or more neutral atoms of the elemental source, from the plasma discharge source through an aperture of the plasma discharge source. The magnetic source may be configured to provide a magnetic field and to collimate the hyperthermal beam in a first direction and control a size of the hyperthermal beam.

Abstract: An exemplary apparatus and method for producing a hyperthermal beam is provided. An apparatus may comprise a plasma discharge source, an emission system, and a magnetic source. The plasma discharge source may be configured to receive an elemental source, generate plasma based on the elemental source, and generate one or more neutral atoms of the elemental source. The emission system may be configured to emit a hyperthermal beam, comprising the one or more neutral atoms of the elemental source, from the plasma discharge source through an aperture of the plasma discharge source. The magnetic source may be configured to provide a magnetic field and to collimate the hyperthermal beam in a first direction and control a size of the hyperthermal beam.

Abstract: A self-propagating combustion cyclone reactor includes a reaction chamber delimited by a circumferential wall in which at least one reductant inlet and a plurality of oxidizer inlets are formed in a tangential manner. Reductant and oxidizer are fed, together with inert gas, through the inlets into the chamber in a cyclonic manner to induce self-propagating combustion reaction to generate a product of high purity metal, such as titanium, zirconium, hafnium, or silicon, semiconductor substance. The reactor serves as a continuous reactor for generation of metal or semiconductor substances of high purity.

Abstract: A self-propagating combustion cyclone reactor includes a reaction chamber delimited by a circumferential wall in which at least one reductant inlet and a plurality of oxidizer inlets are formed in a tangential manner. Reductant and oxidizer are fed, together with inert gas, through the inlets into the chamber in a cyclonic manner to induce self-propagating combustion reaction to generate a product of high purity metal, such as titanium, zirconium, hafnium, or silicon, semiconductor substance. The reactor serves as a continuous reactor for generation of metal or semiconductor substances of high purity.