Abstract: An electronic device includes a display device, which may be fabricated using a described method. The display device includes a glass substrate including a first surface, a second surface opposite the first surface, and a side surface between the first surface and the second surface, an outermost structure on the first surface of the glass substrate and located adjacent to an edge of one side of the glass substrate, and a display area including a plurality of light emitting areas on the first surface of the glass substrate and located farther from the edge of the one side of the glass substrate than the outermost structure is. A minimum distance from the side surface of the glass substrate to the outermost structure is equal to 130 ?m or less.

Abstract: Provided is a silicon nanocomposite structure powder for a negative electrode material, where a SiOx layer is formed on the surface of ultrafine silicon powder by a low-temperature oxidation reaction, and then the silicon powder is milled with graphite powder having excellent conductivity to form a nanocomposite structure, thus achieving improved discharge capacity, efficiency, and cycle characteristics. A method for manufacturing a silicon nanocomposite structure powder for a negative electrode material includes: mechanically milling micro-sized micro silicon powder into nano-sized nano silicon powder; forming an SiOx (1<x<2) layer on the surface of the nano-silicon powder by surface-oxidizing the nano-silicon powder at a low temperature; and dispersing the silicon powder, with the SiOx (1<x<2) layer formed on the surface thereof, in a graphite matrix by mixing and milling the silicon powder, with the SiOx (1<x<2) layer formed on the surface thereof, with graphite powder.

Abstract: Provided is a sapphire single crystal heat treatment method comprising the steps of: charging a sapphire single crystal into a chamber; raising the temperature in the chamber to a target temperature by heating the chamber; holding the temperature in the chamber at a constant temperature; and cooling the inside of the chamber to room temperature, wherein the temperature raising step comprises: a first temperature raising step of raising the temperature to a first set temperature at a temperature raising rate of 4° C./min to 5° C./min; and a second temperature raising step of raising the temperature to a second set temperature at a temperature raising rate of 1° C./min or less after the first temperature raising step has been completed. The temperature raising process is executed in a multi-stage, to reduce the temperature raising time and prevent a sapphire single crystal from being affected by heat.

Abstract: Provided is a sapphire single crystal heat treatment method comprising the steps of: charging a sapphire single crystal into a chamber; raising the temperature in the chamber to a target temperature by heating the chamber; holding the temperature in the chamber at a constant temperature; and cooling the inside of the chamber to room temperature, wherein the temperature raising step comprises: a first temperature raising step of raising the temperature to a first set temperature at a temperature raising rate of 4° C./min to 5° C./min; and a second temperature raising step of raising the temperature to a second set temperature at a temperature raising rate of 1° C./min or less after the first temperature raising step has been completed. The temperature raising process is executed in a multi-stage, to reduce the temperature raising time and prevent a sapphire single crystal from being affected by heat.