Patents by Inventor Yi-Syun Chou

Yi-Syun Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210143212
    Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
    Type: Application
    Filed: January 25, 2021
    Publication date: May 13, 2021
    Inventors: Wei Chen, Hui-Lin Wang, Yu-Ru Yang, Chin-Fu Lin, Yi-Syun Chou, Chun-Yao Yang
  • Publication number: 20210111334
    Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
    Type: Application
    Filed: December 23, 2020
    Publication date: April 15, 2021
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, JUN XIE
  • Patent number: 10943948
    Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: March 9, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wei Chen, Hui-Lin Wang, Yu-Ru Yang, Chin-Fu Lin, Yi-Syun Chou, Chun-Yao Yang
  • Patent number: 10910553
    Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: February 2, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, Jun Xie
  • Publication number: 20210020828
    Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
    Type: Application
    Filed: August 5, 2019
    Publication date: January 21, 2021
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, JUN XIE
  • Publication number: 20200403144
    Abstract: A magnetoresistive random access memory (MRAM) structure includes a magnetic tunnel junction (MTJ), and a top electrode which contacts an end of the MTJ. The top electrode includes a top electrode upper portion and a top electrode lower portion. The width of the top electrode upper portion is larger than the width of the top electrode lower portion. A bottom electrode contacts another end of the MTJ. The top electrode, the MTJ and the bottom electrode form an MRAM.
    Type: Application
    Filed: July 9, 2019
    Publication date: December 24, 2020
    Inventors: Kuo-Chih Lai, Yi-Syun Chou, Ko-Wei Lin, Pei-Hsun Kao, Wei Chen, Chia-Fu Cheng, Chun-Yao Yang, Chia-Chang Hsu
  • Patent number: 10756128
    Abstract: An integrated circuit device includes a complementary metal oxide semiconductor (CMOS) image sensor. The complementary metal oxide semiconductor (CMOS) image sensor includes a P-N junction photodiode, a transistor gate, a polysilicon plug and a stacked metal layer. The P-N junction photodiode is disposed in a substrate. The transistor gate and the polysilicon plug are disposed on the substrate, wherein the polysilicon plug is directly connected to the P-N junction photodiode. The stacked metal layer connects the polysilicon plug to the transistor gate, wherein the stacked metal layer includes a lower metal layer and an upper metal layer, and the lower metal layer includes a first metal silicide part contacting to the polysilicon plug. The present invention also provides a method of fabricating said integrated circuit device.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: August 25, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Chih Lai, Shih-Min Chou, Ko-Wei Lin, Chin-Fu Lin, Wei-Chuan Tsai, Chun-Yao Yang, Chia-Fu Cheng, Yi-Syun Chou, Wei Chen
  • Publication number: 20200227471
    Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
    Type: Application
    Filed: January 30, 2019
    Publication date: July 16, 2020
    Inventors: Wei Chen, Hui-Lin Wang, Yu-Ru Yang, Chin-Fu Lin, Yi-Syun Chou, Chun-Yao Yang
  • Publication number: 20200212090
    Abstract: An integrated circuit device includes a complementary metal oxide semiconductor (CMOS) image sensor. The complementary metal oxide semiconductor (CMOS) image sensor includes a P-N junction photodiode, a transistor gate, a polysilicon plug and a stacked metal layer. The P-N junction photodiode is disposed in a substrate. The transistor gate and the polysilicon plug are disposed on the substrate, wherein the polysilicon plug is directly connected to the P-N junction photodiode. The stacked metal layer connects the polysilicon plug to the transistor gate, wherein the stacked metal layer includes a lower metal layer and an upper metal layer, and the lower metal layer includes a first metal silicide part contacting to the polysilicon plug. The present invention also provides a method of fabricating said integrated circuit device.
    Type: Application
    Filed: January 10, 2019
    Publication date: July 2, 2020
    Inventors: Kuo-Chih Lai, Shih-Min Chou, Ko-Wei Lin, Chin-Fu Lin, Wei-Chuan Tsai, Chun-Yao Yang, Chia-Fu Cheng, Yi-Syun Chou, Wei Chen