Abstract: An image pickup device includes an active pixel sensor (APS), a row driver, and a leakage current breaker. The active pixel sensor includes an array of a plurality of pixels. The row driver selects at least one pixel to be activated to output signals. The leakage current breaker decreases the leakage current through the unselected pixels by applying a leakage current breaker voltage at the bit lines of the APS array.

Abstract: An image sensor includes a photo sensitive device and at lest one transistor such as a drive transistor for converting charge accumulated by the photo sensitive device into an electrical signal. That at least one transistor includes a channel region comprised of a plurality of differently doped regions that generates a conduction band offset in the channel region. Such a conductive band offset increases electron mobility in the channel region for minimizing charge trapping at an interface between a gate dielectric and the semiconductor substrate for minimizing flicker noise.

Abstract: An image sensor includes a photosensitive device and a drive transistor for generating an electrical signal from charge accumulated in the photosensitive device. The drive transistor includes a source region of a first conductivity type and an asymmetry junction region abutting a portion of the source region and being of a second conductivity type that is opposite of the first conductivity type. The drive transistor is biased such that the asymmetry junction region reduces an effective channel length of the drive transistor.

Abstract: A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.

Abstract: Example embodiments may provide a CMOS image sensor. The CMOS image sensor may include a plurality of unit blocks each including two unit pixels. Each unit block may include two photodiodes having a hexagonal shape, a floating diffusion shared by the two unit pixels, a first transfer transistor and a second transfer transistor between the floating diffusion and the two photodiodes, respectively, a reset transistor connected with the floating diffusion, a drive transistor with a gate connected with the floating diffusion, and/or a selection transistor connected to the drive transistor in series. Example embodiment CMOS image sensors may be used in digital cameras, mobile devices, computer cameras, or the like.

Abstract: A CMOS sensor array includes a plurality of unit blocks.

Abstract: Contacts and/or a transistor are shared by neighboring pixel circuits in an image sensor. In addition, a common interconnect line provides common control signals for minimizing metal wiring. Such minimization of space for the shared contacts, transistor, and control signals enhances the fill factor of photodiodes in the image sensor.

Abstract: A pixel circuit of an image sensor includes a floating diffusion node and a reset transistor. The reset transistor is coupled between the floating diffusion node and a reset control signal node of another pixel circuit of the image sensor. A voltage applied on the reset control signal node of the other pixel circuit is a reset voltage transmitted to the floating diffusion node via the reset transistor.

Abstract: Disclosed is an image sensor comprising a vertical photo-detector and related method of fabrication. The vertical photo-detector comprises a stacked plurality of photoelectric conversion layers having different optical sensitivities, each respectively separated by a dielectric barrier layer.

Abstract: A unit pixel of a complementary metal-oxide semiconductor (CMOS) image sensor includes a photoelectric conversion element, a transfer transistor, a boosting capacitor and a signal transfer circuit, where the photoelectric conversion element generates a charge based on incident light, the transfer transistor transfers the charge to a floating diffusion node in response to a transfer control signal, the boosting capacitor is disposed between a gate of the transfer transistor and the floating diffusion node, the signal transfer circuit transfers an electric potential of the floating diffusion node in response to a selection signal, and a dynamic range of the electric potential of the floating diffusion node may be widened and a drain-source voltage difference of the transfer transistor may be increased so that the charge transfer efficiency may be enhanced.

Abstract: A CMOS sensor array includes a plurality of unit blocks.

Abstract: A CMOS active pixel sensor includes a photodiode, a transmitting transistor, a reset transistor, a fingered type source follower transistor and a selecting transistor, where the photodiode generates charge in response to incident light, the transmitting transistor transmits the charge stored in the photodiode to a sensing node, the reset transistor, coupled to a power supply voltage, resets a voltage of the sensing node so that the sensing node has substantially a level of the power supply voltage, the fingered type source follower transistor amplifies the voltage of the sensing node, the selecting transistor transmits a voltage of a source electrode of the fingered type source follower transistor into an internal circuit in response to a selection signal, thus, the channel width of the source follower transistor may be increased, and the MOS device noise due to the source follower transistor may be reduced.

Abstract: An image sensor having a photo diode with improved sensitivity, junction leakage and electron capacity, and a method for manufacturing the image sensor, are provided. The provided image sensor includes a semiconductor substrate and a p-type photo diode region formed on a selected region of the semiconductor substrate. A first n-type photo diode region is formed underneath the p-type photo diode region, contacting an interface of the p-type photo diode region, and a second n-type photo diode region is formed to surround the first n-type photo diode region. Here, impurities composing the first n-type photo diode region have smaller projection distance and diffusivity than impurities composing the second n-type photo diode region.

Abstract: A CMOS image sensor having buried channel MOS transistors is disclosed. The CMOS image sensor includes a photo converting device and a source follower transistor. The photo converting device generates a current signal and changes a voltage of a floating node in response to energy of an incident light. The source follower transistor has a source region doped with a first conductivity-type material, a drain region doped with the first conductivity-type material, a gate region doped with a second conductivity-type material that is complementary to the first conductivity-type material, and a buried channel having the first conductivity-type material. The buried channel is formed between the source region and the drain region and under the gate region.

Abstract: An image sensor and a fabricating method thereof are provided. The image sensor includes a floating diffusion region disposed at a predetermined region of a substrate, a photodiode region, and a source plug disposed on the floating diffusion region. Further, the sensor includes conductive patterns that may be used as gate electrodes of transistors. The conductive pattern and the source plug may have the same thickness and composition. Preferably, the source plug and the conductive pattern are made of polysilicon containing impurities. The fabricating method includes forming an insulating pattern on the semiconductor substrate having an opening exposing a predetermined region of the substrate, and forming a conductive pattern across the opening on the resultant structure. The conductive pattern may be made of polysilicon containing impurities.

Abstract: A signal converter, for converting signal charge into a voltage, comprises a first driver FET for a first stage that receives the signal charge. A subsequent driver FET is coupled to an output of the first driver FET, and a gate dielectric thickness of the subsequent driver FET is decreased. The subsequent driver FET is either for a second stage or for a third stage. The decrease of the gate dielectric thickness for the subsequent driver FET increases the voltage gain AVtotal without decreasing the charge transfer efficiency such that the overall sensitivity of the signal converter is enhanced.

Abstract: An image sensor and a fabricating method thereof are provided. The image sensor includes a floating diffusion region disposed at a predetermined region of a substrate, a photodiode region, and a source plug disposed on the floating diffusion region. Further, the sensor includes conductive patterns that may be used as gate electrodes of transistors. The conductive pattern and the source plug may have the same thickness and composition. Preferably, the source plug and the conductive pattern are made of polysilicon containing impurities. The fabricating method includes forming an insulating pattern on the semiconductor substrate having an opening exposing a predetermined region of the substrate, and forming a conductive pattern across the opening on the resultant structure. The conductive pattern may be made of polysilicon containing impurities.

Abstract: An image sensor having a photo diode with improved sensitivity, junction leakage and electron capacity, and a method for manufacturing the image sensor, are provided. The provided image sensor includes a semiconductor substrate and a p-type photo diode region formed on a selected region of the semiconductor substrate. A first n-type photo diode region is formed underneath the p-type photo diode region, contacting an interface of the p-type photo diode region, and a second n-type photo diode region is formed to surround the first n-type photo diode region. Here, impurities composing the first n-type photo diode region have smaller projection distance and diffusivity than impurities composing the second n-type photo diode region.

Abstract: An image sensor having a photo diode with improved sensitivity, junction leakage and electron capacity, and a method for manufacturing the image sensor, are provided. The provided image sensor includes a semiconductor substrate and a p-type photo diode region formed on a selected region of the semiconductor substrate. A first n-type photo diode region is formed underneath the p-type photo diode region, contacting an interface of the p-type photo diode region, and a second n-type photo diode region is formed to surround the first n-type photo diode region. Here, impurities composing the first n-type photo diode region have smaller projection distance and diffusivity than impurities composing the second n-type photo diode region.