Patents by Inventor Yi-Tang Lai
Yi-Tang Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240099121Abstract: An organic optoelectronic device comprises a first electrode, an active layer and a second electrode. Active layer materials of the active layer comprise a block conjugated polymer materials which includes a structure of formula I: The polymer 1 is a p-type polymer with high energy gap, and the polymer 1 comprises a first electron donor and a first electron acceptor arranged alternately. The polymer 2 is a p-type polymer with low energy gap, and the polymer 2 comprises a second electron donor and a second electron acceptor arranged alternately. Wherein, o and p>0. The organic optoelectronic device of the present invention transfers carriers through the polymer 2 with low energy gap, and suppresses the recombination probability of carriers through the polymer 1 with high energy gap, thereby reducing the leakage current of the organic optoelectronic device.Type: ApplicationFiled: August 18, 2023Publication date: March 21, 2024Inventors: Yi-Ming Chang, Chuang-Yi Liao, Yu-Tang Hsiao, CHENG-CHANG LAI
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Publication number: 20210305456Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface.Type: ApplicationFiled: March 24, 2021Publication date: September 30, 2021Inventors: Jian-Zhi CHEN, Yen-Chun TSENG, Hui-Fang KAO, Yao-Ning CHAN, Yi-Tang LAI, Yun-Chung CHOU, Shih-Chang LEE, Chen OU
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Patent number: 11121285Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.Type: GrantFiled: November 11, 2019Date of Patent: September 14, 2021Assignee: Epistar CorporationInventors: Yung-Fu Chang, Hui-Fang Kao, Yi-Tang Lai, Shih-Chang Lee, Wen-Luh Liao, Mei Chun Liu, Yao-Ru Chang, Yi Hisao
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Publication number: 20200152831Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.Type: ApplicationFiled: November 11, 2019Publication date: May 14, 2020Inventors: Yung-Fu CHANG, Hui-Fang KAO, Yi-Tang LAI, Shih-Chang LEE, Wen-Luh LIAO, Mei Chun LIU, Yao-Ru CHANG, Yi HISAO
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Patent number: 9478698Abstract: A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.Type: GrantFiled: February 6, 2014Date of Patent: October 25, 2016Assignee: EPISTAR CORPORATIONInventors: Tsung-Hsien Yang, Tzu-Chieh Hsu, Yi-Ming Chen, Yi-Tang Lai, Jhih-Jheng Yang, Chih-Wei Wei, Ching-Sheng Chen, Shih-I Chen, Chia-Liang Hsu, Ye-Ming Hsu
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Patent number: 9305904Abstract: A light-emitting diode device includes a transparent substrate having an edge side, a peripheral region and a central region surrounded by the peripheral region; and a plurality of light-emitting diode units disposed along the peripheral region and having a first light-emitting diode unit with an edge parallel to the edge side. The central region is devoid of any light-emitting diode unit.Type: GrantFiled: June 1, 2015Date of Patent: April 5, 2016Assignee: EPISTAR CORPORATIONInventors: Jhih-Sian Wang, Chia-Liang Hsu, Yi-Ming Chen, Yi-Tang Lai
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Patent number: 9257481Abstract: An LED array includes: a first LED unit having a first active layer and a first side; a second LED unit having a second active layer and a second side facing the first side; a trench separating the first LED unit from the second LED unit; and a light-guiding structure formed between the first LED unit and the second LED unite for guiding the light emitted by the first active layer and the second active layer away from the LED array.Type: GrantFiled: November 26, 2012Date of Patent: February 9, 2016Assignee: EPISTAR CORPORATIONInventors: Tsung Hsien Yang, Yi Tang Lai, Yao Ning Chan
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Publication number: 20150262980Abstract: A light-emitting diode device includes a transparent substrate having an edge side, a peripheral region and a central region surrounded by the peripheral region; and a plurality of light-emitting diode units disposed along the peripheral region and having a first light-emitting diode unit with an edge parallel to the edge side. The central region is devoid of any light-emitting diode unit.Type: ApplicationFiled: June 1, 2015Publication date: September 17, 2015Inventors: Jhih-Sian WANG, Chia-Liang HSU, Yi-Ming CHEN, Yi-Tang LAI
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Patent number: 9048165Abstract: A light-emitting diode device having two electrode pads for connecting to an external power comprises a substrate; a plurality of light-emitting diode units on the substrate; and a plurality of conductive connecting structures electrically connecting the plurality of light-emitting diode units; wherein the two electrode pads are encircled by the plurality of light-emitting diode units.Type: GrantFiled: October 14, 2014Date of Patent: June 2, 2015Assignee: Epistar CorporationInventors: Jhih-Sian Wang, Chia-Liang Hsu, Yi-Ming Chen, Yi-Tang Lai
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Publication number: 20150028369Abstract: A light-emitting diode device having two electrode pads for connecting to an external power comprises a substrate; a plurality of light-emitting diode units on the substrate; and a plurality of conductive connecting structures electrically connecting the plurality of light-emitting diode units; wherein the two electrode pads are encircled by the plurality of light-emitting diode units.Type: ApplicationFiled: October 14, 2014Publication date: January 29, 2015Inventors: Jhih-Sian WANG, Chia-Liang HSU, Yi-Ming CHEN, Yi-Tang LAI
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Patent number: 8860046Abstract: A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 ?m, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%.Type: GrantFiled: February 14, 2013Date of Patent: October 14, 2014Assignee: Epistar CorporationInventors: Jhih-Sian Wang, Chia-Liang Hsu, Yi-Ming Chen, Yi-Tang Lai
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Patent number: 8852974Abstract: A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.Type: GrantFiled: December 6, 2012Date of Patent: October 7, 2014Assignee: Epistar CorporationInventors: Chien-Fu Huang, Yi-Ming Chen, Yi-Tang Lai, Chia-Liang Hsu, Tsung-Hsien Yang, Tzu-Chieh Hsu
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Publication number: 20140225138Abstract: A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.Type: ApplicationFiled: February 6, 2014Publication date: August 14, 2014Applicant: Epistar CorporationInventors: Tsung-Hsien YANG, Tzu-Chieh HSU, Yi-Ming CHEN, Yi-Tang LAI, Jhih-Jheng YANG, Chih-Wei WEI, Ching-Sheng CHEN, Shih-I CHEN, Chia-Liang HSU, Ye-Ming HSU
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Publication number: 20140162386Abstract: A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.Type: ApplicationFiled: December 6, 2012Publication date: June 12, 2014Applicant: Epistar CorporationInventors: Chien-Fu HUANG, Yi-Ming Chen, Yi-Tang Lai, Chia-Liang Hsu, Tsung-Hsien Yang, Tzu-Chieh Hsu
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Publication number: 20140145222Abstract: An LED array includes: a first LED unit having a first active layer and a first side; a second LED unit having a second active layer and a second side facing the first side; a trench separating the first LED unit from the second LED unit; and a light-guiding structure formed between the first LED unit and the second LED unite for guiding the light emitted by the first active layer and the second active layer away from the LED array.Type: ApplicationFiled: November 26, 2012Publication date: May 29, 2014Applicant: Epistar CorporationInventors: Tsung Hsien YANG, Yi Tang LAI, Yao Ning CHAN
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Publication number: 20130228802Abstract: A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 ?m, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%.Type: ApplicationFiled: February 14, 2013Publication date: September 5, 2013Applicant: EPISTAR CORPORATIONInventors: Jhih-Sian Wang, Chia-Liang Hsu, Yi-Ming Chen, Yi-Tang Lai
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Patent number: D681563Type: GrantFiled: May 17, 2012Date of Patent: May 7, 2013Assignee: Epistar CorporationInventors: Jhih-Sian Wang, Chia-Liang Hsu, Yi-Ming Chen, Yi-Tang Lai
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Patent number: D894850Type: GrantFiled: December 12, 2018Date of Patent: September 1, 2020Assignee: EPISTAR CORPORATIONInventors: Chun-Fu Tsai, Yao-Ning Chan, Yi-Tang Lai, Yi-Ming Chen, Shih-Chang Lee
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Patent number: D972769Type: GrantFiled: March 31, 2021Date of Patent: December 13, 2022Assignee: EPISTAR CORPORATIONInventors: Hui-Fang Kao, Yao-Ning Chan, Yi-Tang Lai, Yun-Chung Chou, Shih-Chang Lee, Chen Ou