Abstract: A semiconductor device includes a first transistor and a protection structure. The first transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, and a channel layer disposed on the gate dielectric. The protection structure is laterally surrounding the gate electrode, the gate dielectric and the channel layer of the first transistor. The protection structure includes a first capping layer and a dielectric portion. The first capping layer is laterally surrounding and contacting the gate electrode, the gate dielectric and the channel layer of the first transistor. The dielectric portion is disposed on the first capping layer and laterally surrounding the first transistor.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having one or more interior surfaces forming a recess within an upper surface of the substrate. Source/drain regions are disposed within the substrate on opposing sides of the recess. A first gate dielectric is arranged along the one or more interior surfaces forming the recess, and a second gate dielectric is arranged on the first gate dielectric and within the recess. A gate electrode is disposed on the second gate dielectric. The second gate dielectric includes one or more protrusions that extend outward from a recessed upper surface of the second gate dielectric and that are arranged along opposing sides of the second gate dielectric.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A method includes forming a semiconductor fin on a substrate; forming a dielectric layer over the semiconductor fin; forming a metal gate electrode in the dielectric layer and extending across the semiconductor fin; forming a source/drain regions on the semiconductor fin and on opposite sides of the metal gate electrode; performing a first non-zero bias plasma etching process to the metal gate electrode; after performing the first non-zero bias plasma etching process, performing a first zero bias plasma etching process to the metal gate electrode.

Abstract: A support device includes a body and a positioning device mounted on the body for coupling with a fishing reel. A longitudinal hole for receiving a fishing rod extends from a front end through a rear end of the body. A gripping portion is provided on the rear end and includes a coupling portion for coupling with the fishing reel. A finger of a user can grip the front section and can touch a surface section of the fishing rod via a lower opening in a front section of a lower side of the gripping portion. Another finger of the user can grip the rear section and can touch another surface section of the fishing rod via a lateral through-hole formed in a rear section of the lower side and extending from a left side through a right side of the body.

Abstract: A roller assembly for a fishing rod roller guide includes a roller having two receiving portions each receiving a bearing. A side cover is mounted to each of two ends of the roller and includes an inner side having a lip received in a first annular groove in the end of the roller. Each lip includes a second annular groove aligned with a peripheral flange on one of the ends of the roller. A ring made of soft material is partially received in each second annular groove. A gap is formed between each ring and a peripheral flange on one of the ends of the roller. A spacing portion is formed between the inner side of each side cover and one of the ends of the roller. Grease is received in the gaps and seals a portion of each bearing aligned with an end edge of one of the receiving portions.