Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: A method includes forming a first fin structure and a second fin structure protruding from a substrate, forming a dielectric fin between the first fin structure and the second fin structure, recessing the dielectric fin to form a trench between the first fin structure and the second fin structure, and depositing a first dielectric layer on sidewall surfaces of the trench and on a top surface of the recessed dielectric fin. After the depositing the first dielectric layer, a second dielectric layer is deposited in the trench. The method further includes depositing a third dielectric layer to cap the second dielectric layer in the trench, and forming a gate structure on the first fin structure, the second fin structure, and the third dielectric layer.

Abstract: A semiconductor device includes a pair of fin structures on a semiconductor substrate, each including a vertically stacked plurality of channel layers, a dielectric fin extending in parallel to and between the fin structures, and a gate structure on and extending perpendicularly to the fin structures, the gate structure engaging with the plurality of channel layers. The dielectric fin includes a fin bottom and a fin top over the fin bottom. The fin bottom has a top surface extending above a bottom surface of a topmost channel layer. The fin top includes a core and a shell, the core having a first dielectric material, the shell surrounding the core and having a second dielectric material different from the first dielectric material.

Abstract: A miter saw includes a base seat unit, a cutting unit rotatable relative to the base seat unit to bring a saw blade to rotate among a first working state, a second working state and a folded state, and a safety unit having at least one slide slot and a movable pin slidable along the slide slot. When the saw blade is in one of the first and second working states, the movable pin is retained in a first slot portion of the slide slot to permit operation of a trigger. When the saw blade is in the folded state, the movable pin is retained in a second slot portion of the slide slot to lock the trigger.

Abstract: A power supply circuit and a power distribution method thereof are provided. The power supply circuit includes a power input switch block, a power supply measurement block, a power supply conversion block and a power supply control block. The power input switch block provides a first power supply voltage to a load circuit based on an external power supply voltage from an adapter. The power supply measurement block measures a current of the first power supply voltage. The power supply conversion block is coupled to the battery module to provide a second power supply voltage to the load circuit. When a battery temperature of the battery module is higher than a critical temperature and a battery power of the battery module is higher than or equal to a critical power, the power supply control block limits the second power supply voltage provided to the load circuit.

Abstract: A multi-phase brushless DC motor driving circuit includes a driving-stage circuit, a PWM generator, a control circuit and a plurality of current detection circuits. The driving-stage circuit includes a plurality of sub-driving circuits each having a high-side transistor and a low-side transistor. The current detection circuits detect the current at a node between the high-side transistor and the low-side transistor of the corresponding sub-driving circuit, and then generate a current detection signal. According to the current detection signals, the control circuit controls the PWM generator to generate a plurality of PWM signals for controlling the conducting and cutting off of the high-side transistor and the low-side transistor of each sub-driving circuit, and to provide a driving current to drive a multi-phase brushless DC motor.

Abstract: A multi-phase brushless DC motor driving circuit includes a driving-stage circuit, a PWM generator, a control circuit and a plurality of current detection circuits. The driving-stage circuit includes a plurality of sub-driving circuits each having a high-side transistor and a low-side transistor. The current detection circuits detect the current at a node between the high-side transistor and the low-side transistor of the corresponding sub-driving circuit, and then generate a current detection signal. According to the current detection signals, the control circuit controls the PWM generator to generate a plurality of PWM signals for controlling the conducting and cutting off of the high-side transistor and the low-side transistor of each sub-driving circuit, and to provide a driving current to drive a multi-phase brushless DC motor.