Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: A semiconductor device includes a first channel region, a second channel region, and a first insulating fin, the first insulating fin being interposed between the first channel region and the second channel region. The first insulating fin includes a lower portion and an upper portion. The lower portion includes a fill material. The upper portion includes a first dielectric layer on the lower portion, the first dielectric layer being a first dielectric material, a first capping layer on the first dielectric layer, the first capping layer being a second dielectric material, the second dielectric material being different than the first dielectric material, and a second dielectric layer on the first capping layer, the second dielectric layer being the first dielectric material.

Abstract: A miter saw includes a base seat unit, a cutting unit rotatable relative to the base seat unit to bring a saw blade to rotate among a first working state, a second working state and a folded state, and a safety unit having at least one slide slot and a movable pin slidable along the slide slot. When the saw blade is in one of the first and second working states, the movable pin is retained in a first slot portion of the slide slot to permit operation of a trigger. When the saw blade is in the folded state, the movable pin is retained in a second slot portion of the slide slot to lock the trigger.

Abstract: A multi-phase brushless DC motor driving circuit includes a driving-stage circuit, a PWM generator, a control circuit and a plurality of current detection circuits. The driving-stage circuit includes a plurality of sub-driving circuits each having a high-side transistor and a low-side transistor. The current detection circuits detect the current at a node between the high-side transistor and the low-side transistor of the corresponding sub-driving circuit, and then generate a current detection signal. According to the current detection signals, the control circuit controls the PWM generator to generate a plurality of PWM signals for controlling the conducting and cutting off of the high-side transistor and the low-side transistor of each sub-driving circuit, and to provide a driving current to drive a multi-phase brushless DC motor.

Abstract: A multi-phase brushless DC motor driving circuit includes a driving-stage circuit, a PWM generator, a control circuit and a plurality of current detection circuits. The driving-stage circuit includes a plurality of sub-driving circuits each having a high-side transistor and a low-side transistor. The current detection circuits detect the current at a node between the high-side transistor and the low-side transistor of the corresponding sub-driving circuit, and then generate a current detection signal. According to the current detection signals, the control circuit controls the PWM generator to generate a plurality of PWM signals for controlling the conducting and cutting off of the high-side transistor and the low-side transistor of each sub-driving circuit, and to provide a driving current to drive a multi-phase brushless DC motor.