Patents by Inventor Yi-Wei Hsieh

Yi-Wei Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Observation method of wafer ion implantation defect
    Patent number: 7772015
    Abstract: An analysis method of wafer ion implant is presented, the steps of the method comprises: (a) cleave a wafer for analysis, and (b) from these pieces of wafers determine which ones are wafer with defect and set an insulator on the wafer with defect, (c) finally, use scanning electron microscope to observe whether the ion implant on the wafer with defect was correct or not. Whereby, engineers can take less time to analyze whether the ion implant of the wafer is correct or not with 100% repeatability.
    Type: Grant
    Filed: October 27, 2008
    Date of Patent: August 10, 2010
    Assignee: Inotera Memories, Inc.
    Inventors: Yi-Wei Hsieh, Jeremy Duncan Russell, Pei-Yi Chen
  • OBSERVATION METHOD OF WAFER ION IMPLANTATION DEFECT
    Publication number: 20100015735
    Abstract: An analysis method of wafer ion implant is presented, the steps of the method comprises: (a) cleave a wafer for analysis, and (b) from these pieces of wafers determine which ones are wafer with defect and set an insulator on the wafer with defect, (c) finally, use scanning electron microscope to observe whether the ion implant on the wafer with defect was correct or not. Whereby, engineers can take less time to analyze whether the ion implant of the wafer is correct or not with 100% repeatability.
    Type: Application
    Filed: October 27, 2008
    Publication date: January 21, 2010
    Applicant: INOTERA MEMORIES, INC.
    Inventors: YI-WEI HSIEH, JEREMY DUNCAN RUSSELL, PEI-YI CHEN