Patents by Inventor Yi-Wei Lien
Yi-Wei Lien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240124163Abstract: A magnetic multi-pole propulsion array system is applied to at least one external cathode and includes a plurality of magnetic multi-pole thrusters connected adjacent to each other. Each magnetic multi-pole thruster includes a propellant provider, a discharge chamber, an anode and a plurality of magnetic components. The propellant provider outputs propellant. The discharge chamber is connected with the propellant provider to accommodate the propellant. The anode is disposed inside the discharge chamber to generate an electric field. The plurality of magnetic components is respectively disposed on several sides of the discharge chamber. One of the several sides of the discharge chamber of the magnetic multi-pole thruster is applied for one side of a discharge chamber of another magnetic multi-pole thruster.Type: ApplicationFiled: December 19, 2022Publication date: April 18, 2024Applicant: National Cheng Kung UniversityInventors: Yueh-Heng Li, Yu-Ting Wu, Chao-Wei Huang, Wei-Cheng Lo, Hsun-Chen Hsieh, Ping-Han Huang, Yi-Long Huang, Sheng-Wen Liu, Wei-Cheng Lien
-
Publication number: 20230299146Abstract: A semiconductor structure includes a nucleation layer disposed on a substrate, an epitaxial growth layer disposed above the nucleation layer, and a superlattice structure disposed between the nucleation layer and the epitaxial growth layer. The superlattice structure includes a plurality of alternately stacked superlattice units, and adjacent two superlattice units include a first superlattice unit and a second superlattice unit. The first superlattice unit includes a first superlattice layer and a second superlattice layer stacked thereon, the second superlattice unit includes a third superlattice layer and a fourth superlattice layer stacked thereon, where each of the first, second, third and fourth superlattice layers includes a plurality of pairs of two sublayers with different compositions from each other.Type: ApplicationFiled: March 18, 2022Publication date: September 21, 2023Applicant: Vanguard International Semiconductor CorporationInventors: Chih-Yen Chen, Franky Juanda Lumbantoruan, Chien-Jen Sun, Yi-Wei Lien, Tuan-Wei Wang, Chun-Yang Chen
-
Patent number: 10886392Abstract: A semiconductor structure for improving the thermal stability and Schottky behavior by engineering the stress in a III-nitride semiconductor, comprising a III-nitride semiconductor and a gate metal layer. The III-nitride semiconductor has a top surface on which a conductive area and a non-conductive area are defined. The gate metal layer is formed directly on the top surface of the III-nitride semiconductor and comprises a gate connection line and at least one gate contact extending from the gate connection line in a second direction perpendicular to the length of the gate connection line. The at least one gate contact forms a Schottky contact with the III-nitride semiconductor on the conductive area, and the gate connection line is in direct contact with the III-nitride semiconductor on the non-conductive area. The non-conductive area of the III-nitride semiconductor is at least partially covered by the gate connection line.Type: GrantFiled: December 20, 2018Date of Patent: January 5, 2021Assignee: Win Semiconductors Corp.Inventors: Jhih-Han Du, Yi Wei Lien, Che-Kai Lin, Wei-Chou Wang
-
Publication number: 20200304089Abstract: A wideband impedance matching network comprises a fundamental output MN including a first portion and a second portion and a harmonic compensation MN including a harmonic MN portion and a harmonic MN backside-via inductor formed on an outer surface of a harmonic MN backside via hole penetrating through a semiconductor substrate. The first portion, the second portion and the harmonic MN portion are formed on the semiconductor substrate. A second terminal of the first portion and a first terminal of the second portion are connected to an RF output terminal. A first terminal of the harmonic MN portion and a first terminal of the first portion are connected to an RF input terminal. A second terminal of the harmonic MN portion is connected to a first terminal of the harmonic MN backside-via inductor. A second terminal of the harmonic MN backside-via inductor is grounded.Type: ApplicationFiled: March 21, 2019Publication date: September 24, 2020Inventors: Rachit Joshi, Shuo-Hung HSU, Yi-Wei LIEN, Wei-Chou WANG, Walter Tony WOHLMUTH
-
Patent number: 10720390Abstract: An ohmic metal for GaN device comprises a diffusion barrier seed metal layer and a plurality of metal layers. The diffusion barrier seed metal layer is formed on an epitaxial structure layer. The diffusion barrier seed metal layer is made of Pt. The epitaxial structure layer is made of AlGaN or GaN. The plurality of metal layers is formed on the diffusion barrier seed metal layer. The plurality of metal layers comprises a first metal layer and a second metal layer. The first metal layer is formed on the diffusion barrier seed metal layer. The first metal layer is made of Ti. The second metal layer is formed on the first metal layer. The second metal layer is made of Al. By the diffusion barrier seed metal layer, so as to suppress the diffusion of the plurality of metal layers into the epitaxial structure layer.Type: GrantFiled: November 27, 2017Date of Patent: July 21, 2020Assignee: WIN SEMICONDUCTORS CORP.Inventors: Chang-Hwang Hua, Yi-Wei Lien
-
Publication number: 20200203517Abstract: A semiconductor structure for improving the thermal stability and Schottky behavior by engineering the stress in a III-nitride semiconductor, comprising a III-nitride semiconductor and a gate metal layer. The III-nitride semiconductor has a top surface on which a conductive area and a non-conductive area are defined. The gate metal layer is formed directly on the top surface of the III-nitride semiconductor and comprises a gate connection line and at least one gate contact extending from the gate connection line in a second direction perpendicular to the length of the gate connection line. The at least one gate contact forms a Schottky contact with the III-nitride semiconductor on the conductive area, and the gate connection line is in direct contact with the III-nitride semiconductor on the non-conductive area. The non-conductive area of the III-nitride semiconductor is at least partially covered by the gate connection line.Type: ApplicationFiled: December 20, 2018Publication date: June 25, 2020Inventors: Jhih-Han DU, Yi Wei LIEN, Che-Kai LIN, Wei-Chou WANG
-
Publication number: 20190131244Abstract: An ohmic metal for GaN device comprises a diffusion barrier seed metal layer and a plurality of metal layers. The diffusion barrier seed metal layer is formed on an epitaxial structure layer. The diffusion barrier seed metal layer is made of Pt. The epitaxial structure layer is made of AlGaN or GaN. The plurality of metal layers is formed on the diffusion barrier seed metal layer. The plurality of metal layers comprises a first metal layer and a second metal layer. The first metal layer is formed on the diffusion barrier seed metal layer. The first metal layer is made of Ti. The second metal layer is formed on the first metal layer. The second metal layer is made of Al. By the diffusion barrier seed metal layer, so as to suppress the diffusion of the plurality of metal layers into the epitaxial structure layer.Type: ApplicationFiled: November 27, 2017Publication date: May 2, 2019Inventors: Chang-Hwang HUA, Yi-Wei LIEN
-
Patent number: 10084109Abstract: A semiconductor structure for improving the gate metal adhesion and the Schottky stability, comprising: a III-nitride semiconductor having a top surface on which a conductive area and a non-conductive area are defined; a source contact metal and a first drain contact metal forming ohmic contact with the III-nitride semiconductor on the conductive area, and the first drain contact metal provided at one side of the source contact metal; and a gate metal layer comprising a gate connection line and a first gate finger extending from the gate connection line, the first gate finger interposing between the source contact metal and the first drain contact metal and forming a Schottky contact with the III-nitride semiconductor on the conductive area, wherein the first gate finger has a first terminal anchor at an end thereof surrounding the source contact metal, and the first terminal anchor has an increased width.Type: GrantFiled: December 11, 2017Date of Patent: September 25, 2018Assignee: WIN SEMICONDUCTORS CORP.Inventors: Jhih-Han Du, Yi Wei Lien, Che-Kai Lin, Wei-Chou Wang
-
Patent number: 9666685Abstract: A radio frequency (RF) power transistor includes a semiconductor heterostructure, a gate electrode, a drain electrode and a source electrode. The drain electrode includes an ohmic contact and a Schottky contact extending from the ohmic contact toward the gate electrode, spaced apart from the gate electrode (4) by a distance (LGD), and having a length (LEXT) being not less than 2 ?m and not greater than 4 ?m. A ratio of the length (LEXT) to a sum of the length (LEXT) and a distance (LGD) is greater than 0.83 and less than 0.98.Type: GrantFiled: April 1, 2016Date of Patent: May 30, 2017Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Shuo-Hung Hsu, Chuan-Wei Tsou, Yi-Wei Lien
-
Publication number: 20160218205Abstract: A radio frequency (RF) power transistor includes a semiconductor heterostructure, a gate electrode, a drain electrode and a source electrode. The drain electrode includes an ohmic contact and a Schottky contact extending from the ohmic contact toward the gate electrode, spaced apart from the gate electrode (4) by a distance (LGD), and having a length (LEXT) being not less than 2 ?m and not greater than 4 ?m. A ratio of the length (LEXT) to a sum of the length (LEXT) and a distance (LGD) is greater than 0.83 and less than 0.98.Type: ApplicationFiled: April 1, 2016Publication date: July 28, 2016Applicant: National Tsing Hua UniversityInventors: Shuo-Hung HSU, Chuan-Wei TSOU, Yi-Wei LIEN
-
Publication number: 20160087090Abstract: A radio frequency (RF) power transistor includes: a semiconductor heterostructure that includes an undoped barrier layer and an active layer and that is formed with a continuous two dimensional electron gas (2DEG) channel having an ohmic source-aligned region, an ohmic drain-aligned region and a Schottky-aligned region; agate electrode; and source and drain electrodes. One of the source and drain electrodes includes an ohmic contact and a Schottky contact that extends from the ohmic contact toward the gate electrode. The 2DEG channel is normally on and extends continuously from the ohmic source-aligned region to the ohmic drain-aligned region. The Schottky contact overlaps and is capacitively coupled to the Schottky-aligned region of the 2DEG channel.Type: ApplicationFiled: September 23, 2014Publication date: March 24, 2016Applicant: NATIONAL TSING HUA UNIVERSITYInventors: Shuo-Hung HSU, Chuan-Wei TSOU, Yi-Wei LIEN
-
Publication number: 20150099363Abstract: A semiconductor is fabricated on a silicon (Si) substrate. The semiconductor is III-nitride based. The Si substrate is partially isolated. Etching is directly processed from top on a chip for solving wire-width problem. The Si substrate does not need to be made thin. The chip can be large scaled and be prevented from bowing. Thus, the present invention simplifies producing procedure and reduces production cost. Besides, for a large-scaled chip, the breakdown voltage is enhanced; and, without making the Si substrate thin, the on-state current is remained the same and the heat problem is weakened.Type: ApplicationFiled: December 2, 2013Publication date: April 9, 2015Applicant: National Tsing Hua UniversityInventors: Yu-Syuan Lin, Shuo-Hung Hsu, Yi-Wei Lien
-
Patent number: 8999849Abstract: A semiconductor is fabricated on a silicon (Si) substrate. The semiconductor is III-nitride based. The Si substrate is partially isolated. Etching is directly processed from top on a chip for solving wire-width problem. The Si substrate does not need to be made thin. The chip can be large scaled and be prevented from bowing. Thus, the present invention simplifies producing procedure and reduces production cost. Besides, for a large-scaled chip, the breakdown voltage is enhanced; and, without making the Si substrate thin, the on-state current is remained the same and the heat problem is weakened.Type: GrantFiled: December 2, 2013Date of Patent: April 7, 2015Assignee: National Tsing Hua UniversityInventors: Yu-Syuan Lin, Shuo-Hung Hsu, Yi-Wei Lien