Abstract: A light field display module including a light field display layer, an adjustment layer, and an image forming layer is provided. The light field display layer is configured to form a light field image beam. The adjustment layer is disposed on a path of the light field image beam, and configured to adjust the light field image beam. The image forming layer is disposed on the path of the light field image beam from the adjustment layer, and configured to change a position of a light field image by changing a direction of the light field image beam. The image forming layer has multiple optical micro-structures.

Abstract: The disclosure provides an illumination device including a light-emitting element array, a lens array, an infrared light-emitting element array, at least one light sensing element, and a control unit. The light-emitting element array includes a plurality of micro light-emitting diodes arranged in an array. The lens array includes a plurality of lenses. The infrared light-emitting element array includes a plurality of infrared micro light-emitting diodes arranged in an array form, and the infrared micro light-emitting diodes are respectively configured in the light-emitting element array. Each infrared micro light-emitting diode and the at least one light sensing element are configured to provide a plurality of ranging data. The control unit controls each micro light-emitting diode to generate a plurality of light beams according to the ranging data so as to form a plurality of illumination light beams, and the illumination light beams illuminate a target in a pixelated form.

Abstract: In method of manufacturing a semiconductor device, a source/drain epitaxial layer is formed, one or more dielectric layers are formed over the source/drain epitaxial layer, an opening is formed in the one or more dielectric layers to expose the source/drain epitaxial layer, a first silicide layer is formed on the exposed source/drain epitaxial layer, a second silicide layer different from the first silicide layer is formed on the first silicide layer, and a source/drain contact is formed over the second silicide layer.

Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Abstract: A cell module is provided. The cell module includes a first substrate; a second substrate disposed opposite to the first substrate; a cell unit disposed between the first substrate and the second substrate; a first thermosetting resin layer disposed between the cell unit and the first substrate; a crosslinked polymer layer disposed between the cell unit and the first thermosetting resin layer; and a second thermosetting resin layer disposed between the cell unit and the second substrate. The crosslinked polymer layer includes a crosslinked polymer, and the crosslinked polymer has a crosslinking degree of from 35.4 to 67.4%.

Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

Abstract: An information handling system stylus self-cleans a magnet garage arrangement with a garage variable magnet having a first magnetic attraction when the stylus is proximate and information handling system garage and a second magnetic attraction when the stylus is distal the information handling system garage. The second magnetic attraction has a reduced attractive force at the stylus housing outer surface to discourage attraction of contaminants that might scratch or otherwise damage the housing.

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

Abstract: Interconnect structures for front-to-front stacked chips/dies and methods of fabrication thereof are disclosed herein. An exemplary system on integrated circuit (SoIC) includes a first die that is front-to-front bonded with a second die, for example, by bonding a first topmost metallization layer of a first frontside multilayer interconnect of the first die to a second topmost metallization layer of a second frontside multilayer interconnect of the second die. A through via extends partially through the first frontside multilayer interconnect of the first die, through a device layer of the first die, through a backside power rail of the first die, and through a carrier substrate. The backside power rail is between the carrier substrate and the device layer, and the backside power rail may be a portion of a backside multilayer interconnect of the first die. The through via may be connected to a redistribution layer (RDL) structure.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: A method includes forming a first multilayer interconnect structure over a first side of a device layer, forming a first portion of a second multilayer interconnect structure under a second side of the device layer, forming a trench that extends through the second dielectric layer, the device layer, and the first dielectric layer, forming a conductive structure in the trench, and forming a second portion of the second multilayer interconnect structure under the first portion of the second multilayer interconnect structure. The second portion of the second multilayer interconnect structure includes patterned metal layers disposed in a third dielectric layer, and wherein one or more of the patterned metal layers are in electrical connection with the conductive structure.

Abstract: A power converter is provided. The power converter includes a housing, a heat dissipation module, and a first circuit board. The housing forms a receiving space, wherein the housing includes a first housing port and a second housing port. The heat dissipation module is detachably connected to the housing, and disposed in the receiving space. The heat dissipation module includes an inner path that communicates the first housing port with the second housing port. Working fluid enters the inner path via the first housing port. The working fluid leaves the inner path via the second housing port. The first circuit board includes a first circuit board body and a first heat source, wherein the first heat source is disposed on the first circuit board body, and the first heat source is thermally connected to the inner path of the heat dissipation module.

Abstract: An illuminating device including a light-emitting element array and a plurality of light-diffusing elements is provided. The light-emitting element array includes a plurality of discrete light-emitting areas. The plurality of light-diffusing elements respectively correspond to the light-emitting areas, and each light-diffusing element includes a light-entering surface and a light-exiting surface. The light beams emitted by the light-emitting areas respectively enter the corresponding light-diffusing element via the corresponding light-entering surface. After the light beams respectively leave the corresponding light-diffusing element via the corresponding light-exiting surface, the light beams respectively form a plurality of illumination beams. The illumination beams appear in an array form for illumination.

Abstract: An imaging lens, sequentially including a first lens element to a seventh lens element from an object side to an image side along an optical axis, is provided. The first lens element has positive refracting power. The second lens element has negative refracting power. The third lens element and the fourth lens element form a cemented lens element, and the cemented lens element has positive refracting power. The fifth lens element has positive refracting power. The sixth lens element has positive refracting power. The seventh lens element has negative refracting power.

Abstract: An image sensor for imaging fingerprints has multiple photodiode groups each with field of view through a microlens determined by optical characteristics of the microlens and locations of the microlens and openings of upper and lower mask layers. Many photodiode groups have fields of view outwardly splayed from a center-direct field of view. A diameter of openings of the upper mask layer distant from the group having a center-direct field of view is larger than openings of a photodiode group having a center-direct field of view. A method of matching illumination of a group of photodiodes with center-direct field of view to illumination of photodiode groups having outwardly splayed fields of view includes sizing openings in the upper mask layer of photodiode groups with outwardly splayed fields of view larger than openings in the upper mask layer associated with photodiode groups having center-direct field of view.

Abstract: A thermal image endoscope system includes a thermal image endoscope catheter and a control device. The thermal image endoscope catheter including: a tube body; a thermal image capturing assembly and a disposing component are positioned at a head part of the tube body, the thermal image capturing assembly captures a thermal image from a shooting area; the disposing component has a disposing area and the disposing area is inside the shooting area; a towing component is connected to the head part. The control device including: a driving component is connected to a towing component, a controller actuates the driving component according to a disposing command received by a receiving component to drive the towing component to tow the head part, and actuates a gate of a light guide assembly to selectively couple or decouple a light pipe of the light guide assembly to the disposing component.

Abstract: An eyeshade structure for bilirubin detection includes a body, a first detection module, and a second detection module. The body includes a bottom plate and a side wall. The side wall is connected to the bottom plate and forms an accommodating space with the bottom plate. The first detection module is arranged on the bottom plate. The second detection module is arranged on the bottom plate and is adjacent to the first detection module. The first detection module and the second detection module each include a circuit board, a light-emitting element, an inner photographing element, and an outer photographing element. The circuit board is connected to the bottom plate. The light-emitting element is electrically connected to the circuit board. The inner photographing element is electrically connected to the circuit board. The outer photographing element is electrically connected to the circuit board.

Abstract: An image capturing lens sequentially includes a first lens to a seventh lens from an object side to an image side along an optical axis. The first lens has a positive refracting power. The second lens has a negative refracting power. The third lens has a positive refracting power. The fourth lens has a negative refracting power. The fifth lens has a positive refracting power. The fourth lens and the fifth lens form a cemented lens. The sixth lens has a positive refracting power. The seventh lens has a negative refracting power.

Abstract: A VR equipment includes a casing, and an optical module, an eye movement module, and a display module located inside the casing. The optical module includes a lens barrel and first to fourth lenses located in the lens barrel and arranged in sequence from an object plane to an image plane along an optical axis. The eye movement module is located between the first and second lenses. The eye movement module has a light-emitting unit and a receiving unit. The light-emitting unit emits a detection light to human eyes which is then reflected. The reflected detection light is reflected at an object side surface of the second lens and then enters the receiving unit after passing through an object side surface and an image side surface of the first lens. The display module is at an image side surface of the fourth lens. The display module displays an image.

Abstract: An image sensor for imaging fingerprints has multiple photodiode groups each with field of view through a microlens determined by optical characteristics of the microlens and locations of the microlens and openings of upper and lower mask layers. Many photodiode groups have fields of view outwardly splayed from a center-direct field of view. A diameter of openings of the upper mask layer distant from the group having a center-direct field of view is larger than openings of a photodiode group having a center-direct field of view. A method of matching illumination of a group of photodiodes with center-direct field of view to illumination of photodiode groups having outwardly splayed fields of view includes sizing openings in the upper mask layer of photodiode groups with outwardly splayed fields of view larger than openings in the upper mask layer associated with photodiode groups having center-direct field of view.